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High breakdown voltage and high frequency field-effect transistors on heteroepitaxial diamond film.

Research Project

Project/Area Number 10450127
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionWaseda University

Principal Investigator

KAWARADA Hiroshi  Waseda University, School of Science and Engineering, Professor, 理工学部, 教授 (90161380)

Co-Investigator(Kenkyū-buntansha) NAGASAWA Hiroyuki  HOYA, R&D Center, Group Reader, グループリーダー
Project Period (FY) 1998 – 2000
Project Status Completed (Fiscal Year 2001)
Budget Amount *help
¥13,500,000 (Direct Cost: ¥13,500,000)
Fiscal Year 2000: ¥2,500,000 (Direct Cost: ¥2,500,000)
Fiscal Year 1999: ¥4,900,000 (Direct Cost: ¥4,900,000)
Fiscal Year 1998: ¥6,100,000 (Direct Cost: ¥6,100,000)
KeywordsDiamond / H-terminated surface channel / Field-effect transistor / Cut-off frequency / Maximum frequency of oscillation / Breakdown voltage / MESFET / MISFET / ダイヤモンド / ヘテロエピタキシャル / 表面チャネル / ゲート長 / FET / サブミクロン / ナノスケール / 高耐圧FET / 高周波FET
Research Abstract

For the realization of high performance diamond electronic devices such as high power and high frequency transistors, FETs have been fabricated on hydrogen-terminated diamond surface conductive layer. In order to improve the performance of FETs, self-aligned gate fabrication processes which can reduce the gate length and parasitic resistances have been developed. Utilizing self-aligned gate FET fabrication process, 1 μm Cu gate MESFET realizes high transconductance of 110 mS/mm. This value exceeds the transconductance of SiC-FETs and Si-nMOSFETs of equal gate size. High performance diamond MISFETs have been also realized utilizing the same process. CaF_2 insulator which does not generate the high interface states density between hydrogen-terminated diamond is utilized as gate insulator.The highest transconductance of 86 mS/mm is obtained in 1.2 μm gate length. The MISFET shows high channel mobility of more than 250 cm^2/Vs. This value is more than twice higher than that of inversion type SiC MOSFETs. The high channel mobility is explained by the screening effect.
The RF performances of diamond MESFETs and MISFETs are measured for the first time. The cut-off frequency of 2 μm gate MESFET with transconductance of 70 mS/mm shows 2.2 GHz. On the other hand, much higher cut-off frequency of 11 GHz is realized in diamond MISFET with 0.7 μm gate length. This value is 5 times higher than 2 μm gate MESFETs. Utilizing MIS structure which has gate insulator capacitance in series to surface-channel capacitance, the source to gate capacitance is reduced half as much as that of diamond MESFET. This FET also shows highest fmax of 22 GHz and 15 dB of power gain is obtained at 2 GHz.

Report

(4 results)
  • 2001 Final Research Report Summary
  • 2000 Annual Research Report
  • 1999 Annual Research Report
  • 1998 Annual Research Report
  • Research Products

    (75 results)

All Other

All Publications (75 results)

  • [Publications] 津川和夫: "ダイヤモンド表面チャネル型FET-その動作機構と応用-"電子情報通信学会論文誌. J81-C-II. 172-179 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K.Tsugawa: "p-Type semiconductor diamond and its applications"New Ceramics. 11. 13-18 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K.Tsugawa: "Metal-semiconductor field effect transistors on hydrogen-terminated diamond surfaces"Diamond Films and Technol.. 8. 289-297 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.kawarada: "Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined β-SiC(001) surfaces"Appl.Phys.Lett.. 72. 1878-1880 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 川原田 洋: "ダイヤモンド電界効果トランジスタの現状と将来"応用物理. 67. 128-138 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K.Tsugawa: "Device simulations of diamond surface-channel MESFETs"Diam.Film.Tech.. 8. 125-133 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] A.Hokazono: "Surface p-Channel Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Hydrogen-Terminated (001) Surfaces of Diamond"Solid State Electronics. 43. 1465-1471 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K.Tsugawa: "Device Simulations of Diamond Surface-Channel MESFETs"New Diamond and Frontier Carbon Technology. 9. 154-162 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K.Tsugawa: "High-Performance Diamond Surface-Channel Field-Effect Transistors and Their Operation Mechanism"Diamond and Related Materials. 8. 927-933 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K.Kitatani: "MOSFETs on Polished Surfaces of Polycrystalline Diamond"Diamond and Related Materials. 8. 1831-1833 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Umezawa: "High-Performance Diamond Metal-Semiconductor Field-Effect Transistor with 1 μm Gate Length"Jpn.J.Appl.Phys.. 38. L1222-L1224 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M.Tachiki: "Control of adsorbates and conduction on CVD-growth diamond surface, using scanning probe microscope"Applied Surface Science. 159-160. 578-582 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M.Tachiki: "Nanofabrication on Hydrogen-Terminated Diamond Surfaces by Atomic Force Microscope Probe-Induced"Jpn.J.Appl.Phys.. 39. 4631-4632 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S.Kono: "Surface Order Evaluation of the Heteroepitaxial Diamond Film Growth on an Inclined β-SiC(001)"Jpn.J.Appl.Phys.. 39. 4672-4673 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Umezawa: "Cu/CaF_2/Diamond Metal-Insulator-Semiconductor Field-Effect Transistor Utilizing Self-Aligned Gate Fabrication Process"Jpn.J.Appl.Phys.. 39. 908-910 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Umezawa: "High-Performance Surface-Channel Diamond Field-Effect Transistors"Mater.Sci.Forum. 353-356. 815-818 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Kawarada: "Surface Channel Diamond Field Effect Transistors and Their Applications"Ext.Abst.of 1st Int.Workshop on Ultra-Low-Loss Pow.Dev.Tech.. 2000. 112-115 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 川原田洋: "表面伝導層を用いたダイヤモンド電子デバイス"応用物理. 70. 536-541 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K.Tsugawa: "Characterization of diamond surface-channel metal-semiconductor field-effect transistor with device simulation"Jpn.J.Appl.Phys.. 40. 3101-3107 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Kawarada: "Electrolyte-Solution-Gate FETs Using Diamond Surface for Biocompatible Ion Sensors"Phys.Stat.Sol.(a). 185. 79-83 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] N.Taniyama: "Diamond deposition on a large-area substrate by plasma-assisted chemical vapor deposition using an antenna-type coaxial microwave plasma generator"Jpn.J.Appl.Phys.. 40. 698-700 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Taniuchi: "High-Frequency Performance of Diamond Field-Effect Transistors"IEEE Elect.Dev.Lett.. 22. 390-392 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K.Tanabe: "Cathodoluminescence of phosphorus doped (111) homoepitaxial diamond thin films"Diamond Relat.Mater.. 10. 1652-1654 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Umezawa: "Potential applications of surface channel diamond field-effect transistors"Diamond Relat.Mater.. 10. 1743-1748 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K.Nakazawa: "Excitonic recombination radiation in phosphorus-doped CVD diamonds"Phys.Rev.B. 64. 235203-1-235203-4 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Umezawa: "Fabrication of Sub-0.1μm Channel Diamond MISFET"Mat.Res.Soc.Symp.Proc.. 675. E8.2.1-E8.2.6 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M.Tachiki: "Nanodevice Fabrication on Hydrogenated Diamond Surface using Atomic Force Microscope"Mat.Res.Soc.Symp.Proc.. 675. W12.5.1-W12.5.5 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Umezawa: "High Frequency Application of High Transconductance Surface-Channel Diamond Field-Effect Transistors"Proc.2001 ISPSD. 2001. 195-198 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 立木実: "ダイヤモンドナノ加工技術"マテリアルインテグレーション. 14. 47-51 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Kawarada: "Low pressure synthetic diamond : manufacturing and applications"Springer-Verlag(Chapter 8). (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Tsugawa: ""p-Type semiconductor diamond and its applications""New Ceramics. 11,No.3. 13 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Tsugawa, K. Kitatani, and H. Kawarada: ""Metal-semiconductor field effect transitors on hydrogen-terminated diamond surfaces""Diamond Films and Technol. Vol.8,No.4. 289-297 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Kawarada, C. Wild, N. Henes, P. Koidl, Y. Mizuochi, A. Hokazono, and H. Nagasawa: ""Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined β-SiC(001)surfaces""Appl. Phys. Lett.. Vol.72, No.15. 1878-1880 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Tsugawa, A. Hokazono, H. Noda, K. Kitatani, K. Morita, H. Kawarada: ""MESFETs and MOSFETs on Hydrogen-Terminated Diamond Surfaces""Materials Science Forum. Vol.264-268. 977-980 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Kawarada: ""Diamond field-effect transistor-Its present status and future""Oyo Buturi. 67. 128-138 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Tsugawa and H. Kawarada: ""Device simulations of diamond surface-channel MESFETs""Diam. Film. Tech. 8. 125-133 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] A. Hokazono, K. Tsugawa, H. Umezawa, K. Kitatani and H. Kawarada: ""Surface p-Channel Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Hydrogen-Terminated (001) Surfaces of Diamond""Solid State Electronics. 43. 1465-1471 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Tsugawa and H. Kawarada: ""Device Simulations of Diamond Surface-Channel MESFETs""New Diamond and Frontier Carbon Technology. Vol.9. 154 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Tsugawa, K. Kitatani, H. Noda, A. Hokazono, K. Hirose, M. Tajima and H. Kawarada: ""High-Performance Diamond Surface-Channel Field-Effect Transistors and Their Operation Mechanism""Diamond and Related Materials. Vol.8. 927-933 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Kitatani, H. Umezawa, K. Tsugawa, K. Ueyama, T. Ishikura, S. Yamashita and H. Kawarada: ""MOSFETs on Polished Surfaces of Polycrystalline Diamond""Diamond and Related Materials. Vol.8. 1831-1833 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Umezawa, K. Tsugawa, S. Yamanaka, D. Takeuchi, H. Okushi and H. Kawarada: ""High-Performance Diamond Metal-Semiconductor Field-Effect Transistor with 1 μm Gate Length""Jpn. J. Appl. Phys.. Vol.38. L1222-L1224 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M. Tachiki, T. Fukuda, K. Sugata, H. Seo, H. Umezawa, and H. Kawarada: ""Control of adsorbates and conduction on CVD-growth diamond surface, using scanning probe microscope""Applied Surface Science. 159-160. 578-582 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M. Tachiki, T. Fukuda, K. Sugata, H. Seo, H. Umezawa, and H. Kawarada: ""Nanofabrication on Hydrogen-Terminated Diamond Surfaces by Atomic Force Microscope Probe-Induced Oxidation""Jpn. J. Appl. Phys.. Vol.39. 4631-4632 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S. Kano, T. Goto, T. Abukawa, C. Wild, P. Koidl, and H. Kawarada: ""Surface Order Evaluation of the Heteroepitaxial Diamond Film Growth on an Inclined β-SiC(001)""Jpn. J. Appl. Phys.. Vol.39. 4372-4673 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Umezawa, H. Taniuchi, T. Arima, M. Tachiki, K. Tsugawa, S. Yamanaka, D. Takeuchi, H. Okushi, and H. Kawarada: ""Cu/CaF_2/Diamond Metal-Insulator-Semiconductor Field-Effect Transistor Utilizing Self-Aligned Gate Fabrication Process""Jpn. J. Appl. Phys.. Vol.39. L908-L910 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Umezawa, H. Taniuchi, T. Arima, M. Tachiki, H. Okushi and H. Kawarada: ""High Performance Surface-Channel Diamond Field-Effect Transistors""Mater. Sci. Forum.. Vol.353-356. 815-818 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Kawarada, H. Umezawa, K. Tsugawa and M. Tachiki: ""Surface Chennel Diamond Field Effect Transistors and Their Applications""Ext. Abst. of 1st Int. Workshop on Ultra-Low-Loss Pow. Dev. Tech.. 112-115 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Kawarada, M. Tachiki and H. Umezawa: ""Diamond electron devices using a surface-conductive layer""Oyo Buturi. 705. 536-541 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Tsugawa, H. Umezawa, H. Kawarada: ""Characterization of diamond surface-channel metal-semiconductor field-effect transistor with device simulation""Jpn. J. Appl. Phys. Vol.40. 3101-3107 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Kawarada, Y. Araki, T. Sakai, T. Ogawa, and H. Umezawa: ""Electrolyte-Solution-Gate FETs Using Diamond Surface for Biocompetible Ion Sensors""phys. stat. sol. (a). Vol. 185. 79-83 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] N. Taniyama, M. Kudo, O. Matsumoto, H. Kawarada: ""Diamond deposition on a large-area substrate by plasma-assisted chemical vapor deposition using an antenna-type coaxial microwave plasma generator""Jpn. J. Appl. Phys. Vol.40. L698-L700 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Taniuchi, H. Umezawa, T. Arima, M. Tachiki and H. Kawarada: ""High-Frequency Performance of Diamond Field-Effect Transistors""IEEE Elect Dev. Lett.. Vol.22. 390-392 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Tanabe, K. Nakazawa, J. Susantyo, H. Kawarada and S. Koizumi: ""Cathodoluminescence of phosphorus doped (111) homoepitaxial diamond thin films""Diamond Relat. Mater. Vol.10. 1652-1654 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Umezawa, H. Taniuchi, T. Arima, M. Tachiki and H. Kawarada: ""Potential applications of surface channel diamond field-effect transistors""Diamond Relat. Mater. Vol.10. 1743-1748 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Nakazawa, K. Tanabe, M. Tachiki, H. Kawarada and S. Koizumi: ""Excitonic recombination radiation in phosphorus-doped CVD diamonds""Phys. Rev. B. Vol.64. 235203-1-235203-4 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Umezawa, T. Arima, N. Fujihara, H. Taniuchi, H. Ishizaka, M. Tachiki and H. Kawarada: ""Fabrication of Sub-0.1 μm Channel Diamond MISFET""Mat. Res. Soc. Symp. Proc.. Vol.675. E82.1-82.6 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M. Tachiki, T. Fukuda, H. Seo, K. Sugata, T. Banno, H. Umezawa and H. Kawarada: ""Nanodevice Fabrication on Hydrogenated Diamond Surface using Atomic Force Microscope""Mat. Res. Soc. Symp. Proc.. Vol.675. W125.1-125.5 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Umezawa, H. Taniuchi, T. Arima, H. Ishizaka, N. Fujihara, Y. Ohba, M. Tachiki and H. Kawarada: ""High Frequency Application of High Transconductance Surface-Channel Diamond Field-Effect Transistors""Proc. 2001 ISPSD. 195-198 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] M. Tachiki, K. Nakazawa and H. Kawarada: ""Diamond nano-fabrication""Materials Integration. 14. 47-51 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Kawarada: ""Low pressure synthetic diamond : manufacturing and applications" Chapter 8 : Hetero-epitaxy and highly oriented diamond deposition"Springer-Verlag. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 梅沢仁: "Cu/CaF_2/Diamod Metal-Insulator-Semiconductor Field-Effect Transistor Utilizing Self-Aligned Gate Fabrication Process"Japanese Journal of Applied Physics. 39巻・9A/B号. L908-L910 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 梅沢仁: "High-Performance Surface-Channel Diamond Field-Effect Transistors"Proceedings of the 3^<rd> European Conference on Silicon Carbide and Related Materials (Materials Science Forum). 353-356巻. 815-818 (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] 立木実: "Nanofabrication on Hydrogen-Terminated Diamond Surfaces By Atomic Force Microscopy Probe-Induced Oxidation"Japanese Journal of Applied Physics. 39巻. 4631-4632 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 立木実: "Control of adsorbates and conduction on CVD-grown diamond Surface, using scanning probe microscope"Applied Surface Science. 159-160巻. 578-582 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 梅沢 仁: "High-Performance Diamond Metal-Semiconductor Field-Effect Transistor with 1 μm Gate Length"Japanese Journal of Applied Physics. 38巻・11A号. L1222-L1224 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 北谷 謙一: "MOSFETs on polished Surfaces of Polycrystalline Diamond"Diamond and Related Materials. 8巻. 1831-1833 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 津川 和夫: "High-Performance Diamond Surface-Channel Field-Effect Transistors and Their Operation Mechanism"Diamond and Related Materials. 8巻. 927-933 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 外園 明: "Surface p-Channel Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Hydrogen-Terminated (001) Surfaces of Diamond"Solid State Electronics. 43巻. 1465-1471 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 津川 和夫: "Device Simulation of Diamond S Fabrication of 1 μm Gate Diamond FET Using Self-Aligned Gate Process urface-Channel MESFETs"New Diamond and Frontier Carbon Technology. 9巻・2号. 154-155 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 梅沢 仁: "Fabrication of 1 μm Gate Diamond FET Using Self-Aligned Gate Process"New Diamond and Frontier Carbon Technology. 9巻・2号. 151-153 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] H.Kawarada,C.Wild,N.Herres,P.Koidl: "Surface Morphology and Surface p-channel Field Effect Transistor on the Heteroepitaxial Diamond Deposited on Inclined B-SiC(001)Surfaces" Appl.Phys.Lett.72・15. 1878-1880 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] K.Tsugawa,K.Kitatani,H.Kawarada: "High-performance diamond surface channel FETs and their operation mechanism" Diamond Rel.Mat.8. (1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] K.Kitatani,K.Tsugawa,H.Umezawa,H.Kawarada: "FETs Fablication on Hydrogen-Terminated Polycrystalline Diamond Surfaces" Diamond Rel.Mat.8. (1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] A.Hokazono,K.Tsugawa,K.Kitatani,H.Kawarada: "Surface p-channel metal-oxide-semiconductor field effect transistors fablicaced on hydrogen terminated(001)surfaces of diamond" Solid-State Electronics. 43. (1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] H.Kawarada: "LowPressure Synthetic Diamond:Manufacturing and Applications Chapter 8:Hetero-Epitaxy and Highly Oriented Diamond Deposition" Springer-Verlag, 25 (1998)

    • Related Report
      1998 Annual Research Report

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Published: 1998-04-01   Modified: 2016-04-21  

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