| Project/Area Number |
10450130
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | TOHOKU UNIVERSITY |
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Principal Investigator |
SATO Nobuyuki Research Institute of Electrical Communication Research, Tohoku University, Associate, 電気通信研究所, 助手 (10178759)
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| Co-Investigator(Kenkyū-buntansha) |
SHIMAWAKI Hidetaka Research Institute of Electrical Communication Research, Tohoku University, Research Associate, 電気通信研究所, 助手 (80241587)
EGAMI Norifumi ATR Adaptive Communication Research Laboratories, Tohoku University, Head, 環境適応通信研究所, 室長
YOKOO Kuniyoshi Research Institute of Electrical Communication Research, Tohoku University, Professor, 電気通信研究所, 教授 (60005428)
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| Project Period (FY) |
1998 – 1999
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| Project Status |
Completed (Fiscal Year 1999)
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| Budget Amount *help |
¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 1999: ¥1,500,000 (Direct Cost: ¥1,500,000)
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| Keywords | MOS / Tunneling cathodes / Work function / high brightness / field emitters / electron emission / GaAs / AlAs superlattice structure / quantum well / MOS構造 / 2段ゲート構造 |
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| Research Abstract |
1. We have measured gate voltage - emission current characteristics and energy destitutions of the emitted electrons for MOS tunneling cathodes with and without Cs coating. These characteristics reveal that controlling the work function is the most useful for enhancing the emission current in the MOS tunneling cathodes.
2. We have fabricated the new MOS tunneling cathode which has two gate electrodes. We have experimentally confirmed that it is possible to control the effective work function in the MOS cathode with two gate electrodes.
3. We have successfully demonstrated that the effective work function of the field emitters with an appropriate thin-film-coating becomes lower than that of the original field emitters. We also reveal that the effective work function of the field emitters with the coating is determined by the potential barrier for injected electrons between the original material of the field emitter and the coating material, the dielectric constant and the electron affinity of the coating material.
4. We have fabricated resonant tunneling emitters with a single quantum well of GaAs/AlAs, whose thicknesses are 2.83nm and 2.83nm, respectively. We have observed the emission current which is strongly related to the negative resistance due to the resonant tunneling effect. This indicates that the emission current is considered to come from the resonant tunneling effect.
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