Integrated Gountum Devices using Fluoride Heterostructures
| Project/Area Number |
10450133
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
TSUTSUI Kazuo Tokyo Inst.of Technol, Associate Professor, 大学院・総合理工学研究科, 助教授 (60188589)
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| Co-Investigator(Kenkyū-buntansha) |
KAWASAKI Koji Tokyo Inst.of Technol, Research Associat, 大学院・総合理工学研究科, 助手 (10234056)
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| Project Period (FY) |
1998 – 1999
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| Project Status |
Completed (Fiscal Year 1999)
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| Budget Amount *help |
¥11,000,000 (Direct Cost: ¥11,000,000)
Fiscal Year 1999: ¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 1998: ¥7,300,000 (Direct Cost: ¥7,300,000)
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| Keywords | Fluoride / CaF_2 / CdF_2 / resonant tunneling / quantum devices / integration / 超薄膜 |
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| Research Abstract |
Co-integration of resonant tunneling diodes (RTDs) which were composed of heterostructure of Al/CaF_2/CdF_2/CaF_2/Si and conventional Si-MOSFETs on a same Si substrates was investigated. First, we succeeded in fabricating the RTDs in contact holed made in a field oxide layer. And then, we optimized dose of ion implantation from both of RTD characteristics and Ohmic contact properties. It is found that Si surface became rough in the atomic scale level if phosphorus ions over 10^<16>cm^<-2> were implanted and annealed. On the other hand, 10^<15>cm^<-2> or more was necessary for forming non-alloy Ohmic contacts which is necessary in our process.
On the basis of these process limitation, we propose a process fabricating the RTDs and MOSFET on the same substrate. We fabricated test circuit composed of 2 RTDs and 1 FET which can operate as a latch gate or one bit SRAM cell. On the fabricated circuit, we obtained normal operation of RTD and FET, and observed latch operation on the series connection of the two RTDs.
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Report
(3 results)
Research Products
(7 results)
