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Integrated Gountum Devices using Fluoride Heterostructures

Research Project

Project/Area Number 10450133
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field 電子デバイス・機器工学
Research InstitutionTokyo Institute of Technology

Principal Investigator

TSUTSUI Kazuo  Tokyo Inst.of Technol, Associate Professor, 大学院・総合理工学研究科, 助教授 (60188589)

Co-Investigator(Kenkyū-buntansha) KAWASAKI Koji  Tokyo Inst.of Technol, Research Associat, 大学院・総合理工学研究科, 助手 (10234056)
Project Period (FY) 1998 – 1999
Project Status Completed (Fiscal Year 1999)
Budget Amount *help
¥11,000,000 (Direct Cost: ¥11,000,000)
Fiscal Year 1999: ¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 1998: ¥7,300,000 (Direct Cost: ¥7,300,000)
KeywordsFluoride / CaF_2 / CdF_2 / resonant tunneling / quantum devices / integration / 超薄膜
Research Abstract

Co-integration of resonant tunneling diodes (RTDs) which were composed of heterostructure of Al/CaF_2/CdF_2/CaF_2/Si and conventional Si-MOSFETs on a same Si substrates was investigated. First, we succeeded in fabricating the RTDs in contact holed made in a field oxide layer. And then, we optimized dose of ion implantation from both of RTD characteristics and Ohmic contact properties. It is found that Si surface became rough in the atomic scale level if phosphorus ions over 10^<16>cm^<-2> were implanted and annealed. On the other hand, 10^<15>cm^<-2> or more was necessary for forming non-alloy Ohmic contacts which is necessary in our process.
On the basis of these process limitation, we propose a process fabricating the RTDs and MOSFET on the same substrate. We fabricated test circuit composed of 2 RTDs and 1 FET which can operate as a latch gate or one bit SRAM cell. On the fabricated circuit, we obtained normal operation of RTD and FET, and observed latch operation on the series connection of the two RTDs.

Report

(3 results)
  • 1999 Annual Research Report   Final Research Report Summary
  • 1998 Annual Research Report
  • Research Products

    (7 results)

All Other

All Publications (7 results)

  • [Publications] T.Kobori and K.Tsutsui: "Molecular-beam epitaxy of conductine CdF_2 films on Si substrater by simultaneous Cd exposure"Applied Physics Letters. 78. 1406-1408 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T.Gotoh, H.Kambayashi and K.Tsutsui: "Epitaxial growth of Ca_xCd_<1-x>F_2 mixed crystal films on Si substrates"Japanese Journal of Applied Physics. 39. L476-L478 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T.Kobori and K.Tsutsui: "Molecular-beam epitaxy of conductive CdF_2 Films on Si substrates by Simultaneous Cd Exposure"Applied Physics Letters. Vol.78. 1406-1408 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T.Gotoh, H.Kambayashi and K.Tsutsui: "Epitaxial Growth of Ca_xCd_<1-x>F_2 Mixed Crystal Films on Si Substrates"Japanese Journal of Applied Plysics. Vol.39. L476-L478 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 熊谷史裕,寺山俊明,川崎宏治,筒井一生: "Si基板上への CdF_2/CaF_2共鳴トンネル構造成長における基板方位オフ角依存性"第47回応用物理学関係連合講演会 予稿集. (発表予定). (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] 後藤卓司,神林宏,筒井一生: "Si基板上への CaCdF_2混晶層のエピタキシャル成長"第47回応用物理学関係連合講演会 予稿集. (発表予定). (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] 小堀俊光,筒井一生: "厚いCaF_2バッファーを用いたSi(III)上エピタキシャルCdF_2膜の成長温度依存性" 第59回応用物理学会学術講演会予稿集. 512-512 (1998)

    • Related Report
      1998 Annual Research Report

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Published: 1998-04-01   Modified: 2016-04-21  

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