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EXCIMER LASER DOPING FOR WIDE-GAP SEMICONDUCTORS

Research Project

Project/Area Number 10450134
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field 電子デバイス・機器工学
Research InstitutionRESEARCH INSTITUTE OF ELECTRONICS, SHIZUOKA UNIVERSITY

Principal Investigator

HATANAKA Yoshinori  SHIZUOKA UNIVERSITY, RESEARCH INSTITUTE OF ELECTRONICS PROFESSOR, 電子工学研究所, 教授 (60006278)

Co-Investigator(Kenkyū-buntansha) NAKAMURA Takatou  SHIZUOKA UNIVERSITY, FACULTY OF ENGINEERING PROFESSOR, 工学部, 教授 (10022287)
NAKANISHI Yoichiro  SHIZUOKA UNIVERSITY, RESEARCH INSTITUTE OF ELECTRONICS PROFESSOR, 電子工学研究所, 助教授 (00022137)
KANDOU Masaahi  SHIZUOKA UNIVERSITY, FACULTY OF ENGINEERING PROFESSOR, 工学部, 教授 (60023248)
AOKI Toru  SHIZUOKA UNIVERSITY, RESEARCH INSTITUTE OF ELECTRONICS RESEARCH ASSOCIATE, 電子工学研究所, 助手 (10283350)
Project Period (FY) 1998 – 1999
Project Status Completed (Fiscal Year 1999)
Budget Amount *help
¥10,500,000 (Direct Cost: ¥10,500,000)
Fiscal Year 1999: ¥3,400,000 (Direct Cost: ¥3,400,000)
Fiscal Year 1998: ¥7,100,000 (Direct Cost: ¥7,100,000)
KeywordsExcimer Laser / Impulity doping / II-VI Compound Semiconductor / CdTe / ZnO / ZnSe / heavy doping / Diode / ドーピング / ワイドギャップ半導体 / レーザードーピング / オーム性接触 / シミュレーション
Research Abstract

p-type doping of wide band gap II-VI semiconductors is a key technology to form the ohmic contact with metal electrodes in device fabrications. Using an alkaline metal compound such as K2S, Na2Se or Na2Te which contains dopant atoms, excimer laser doping experiment were carried out for ZnSe and CdTe. Influence of the electrical properties on this treatment was mainly measured by mean of the Hall measurement. The resistivity of ZnSe drastically decreased from 105 to 10-2 ohm cm and the value of holwe carrier concentration increased up to 4.8 x 1019 cm-3.
For CdTe, also resistivity decreased from 105 to 10-1 ohm cm by laser doping method using Na2Te as a compound including dopant atoms. Formation of p-type ohmic contact in CdTe p-i-n diode was also investigated. We have further extended this technique for doping with spatial pattern. The spatially patterned doping is demonstrated with strip detector patterns. These doping techniques are promising for the fabrication of integrated CdTe two-demensional imaging system.
CdTe is an attractive semiconductor material for applications in solid-state high energy X-ray and gamma ray imaging systems because of its high absorption coefficient, large bandgap, good mobility life time product of holes and stability at normal atmospheric conditions. This technique will be essential for integrated gamma ray detector fabrications.

Report

(3 results)
  • 1999 Annual Research Report   Final Research Report Summary
  • 1998 Annual Research Report
  • Research Products

    (42 results)

All Other

All Publications (42 results)

  • [Publications] Y.Hatanaka et al: "Heavy p-type doping of ZnSe-based II-VI semiconductors using an excimer laser"SPIE. 3283. 78-86 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Y.Hatanaka et al.: "Heavily doped p-type ZnSe layer formation by excimer laser dopig"J.Cryst.Growth. 184/185. 425-428 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M.Niraula et al.: "Fabrication and Performance of p-i-n CdTe High Energy Flux Detector"Proc.of JICAST'98/CPST'98. 249-252 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Y.Nakanishi et al: "Preparation of Zn0 thin films forhigh-resoltion field emission display by electron beam evaporation"Appl.Surf.Sci.. 142. 233-236 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M.Niraula et al.: "Study of excimer laser doping process in CdTe"20. 81-83 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 野田大二 et al.: "CdZnTe系化合物半導体のエピタキシャル成長と窒素ラジカルドーピング"静岡大学大学院電子科学研究科研究報告. 20. 84-86 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 三宅亜紀 et al: "電子ビーム蒸着法で作製したZnO薄膜の発光特性"静岡大学大電子工学研究所研究報告. 33. 27-30 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Y.Hatanaka et al.: "Surface processing of CdTe compound semiconductor by excimer laser doping"Appl.Surf.Sci.. 142. 227-232 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M.Niraula et al.: "Low temperature growthand n-type doping of CdTd by remote-plasma-assisted metalorganic chemical vapor doposition method."Proc.of ISSP'99. 105-106 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] D.Noda et al.: "Epitaxial Growth and Nitrogen Radical Doping of CdZnTe"J.Electrochem.Soc.. 146. 3482-3484 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] D.Mochizuki et al: "Excimer laser doping technique for application in an integrated CdTe imaging device"Nucl.Inst.Methods.Phys.Res.. A. 127-131 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M.Niraula et al: "Improved spectrometric performance of CdTe radiation detectors in a p-i-n design"Appl.Phys.Lett.. 75. 2322-2324 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Y. Hatanaka et. al.: "Heavy p-type doping of ZnSe-based II-VI semiconductors using an excimer laser"SPIE. 3283. 78-86 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Y. Hatanaka et. al.: "Heavily doped p-type ZnSe layer formation by excimer laser doping"J. Cryst. Growth. 184/185. 425-428 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M. Niraula et. al.: "Fabrication and performance of p-i-n CdTe high energy flux detector"Prof. of JICAST'98/CPST'98. 249-252 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Y. Nakanishi et. al.: "Preparation of ZnO thin films for high-resolution field emission display by electron beam evaporation"Appl. Surf. Sci.. 142. 233-236 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M. Niraula et. al.: "Study of excimer laser doping process in CdTe"Report of the Grad. School of Electronic. Sci. and Tech., Shizuoka Univ.. 20. 81-84 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] D. Noda et. al.: "Epitaxial growth and nitrogen radical doping properties of CdZnTe based compound semiconductor"Report of the Grad. School of Electronic. Sci. and Tech., Shizuoka Univ.. 20. 85-90 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] A. Miyake et. al.: "Luminescent Properties of ZnO Thin Films Deposited by Electron Beam Evaporation"Bulletin of the Res. Inst. of Electronics, Shizuoka Univ.. 33. 27-30 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Y. Hatanaka et. al.: "Surface processing of CdTe compound semiconductor by excimer laser dioping"Appl. Surf. Sci.. 142. 227-232 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M. Niraula et. al.: "Low temperature growth and n-type doping of CdTe by remote plasma assisted metalorganic chemical vapor deposition method"Prof. of ISSP'99. 105-106 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] D. Noda et. al.: "Epitaxial growth and nitrogen radical doping of CdZnTe"J. Electrochem. Soc.. 146. 3482-3484 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] D. Mochizuki et. al.: "Excimer laser doping technique for application an integrated CdTe imaging device"Nucl. Inst. Methods. Phys. Res.. A. 127-131 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M. Niraula et. al.: "Improved spectrometric performance of CdTe radiation detectors in a p-i-n design"Appl. Phys. Lett.. 75. 2322-2324 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Y.Hatanaka et al: "Heavy p-type doping of ZnSe-based II-VI semiconductors using an excimer laser"SPIE. 3283. 78-86 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] Y.Hatanaka et al: "Heavily doped p-type ZnSe layer formation by excimer laser doping"J.Cryst.Growth. 184/185. 425-428 (1998)

    • Related Report
      1999 Annual Research Report
  • [Publications] M.Niraula et al.: "Fabrication and Performance of p-i-n CdTe High Energy Flux Detector"Proc.of JICAST'98/CPST'98. 249-252 (1998)

    • Related Report
      1999 Annual Research Report
  • [Publications] Y.Nakanishi et al: "Preparation of ZnO thin films forhigh-resoltion field emission display by electron beam evaporation"Appl.Surf.Sci.. 142. 233-236 (1998)

    • Related Report
      1999 Annual Research Report
  • [Publications] M.Niraula et al.: "Study of excimer laser doping process in CdTe"静岡大学大学院電子科学研究科研究報告. 20. 81-83 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 野田大二 et al.: "CdZnTe系化合物半導体のエピタキシャル成長と窒素ラジカルドーピング"静岡大学大学院電子科学研究科研究報告. 20. 84-86 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 三宅亜紀 et al.: "電子ビーム蒸着法で作製したZnO薄膜の発光特性"静岡大学大学院電子工学研究所研究報告. 33. 27-30 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] Y.Hatanaka et al: "Surface processing of CdTe compound semiconductor by excimer laser doping"Appl.Surf.Sci.. 142. 227-232 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] M.Niraula et al.: "Low temperature growthand n-type doping of CdTe by remote-plasma-assisted metalorganic chemical vapor doposition method"Proc.of ISSP' 99. 105-106 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] D.Noda et al.: "Epitaxial Growth and Nitrogen Radical Doping of CdZnTe"J.Electrochem.Soc.. 146. 3482-3484 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] D.Mochizuki et al: "Excimer laser doping technique for application in an integrated CdTe imaging device"Nucl.Inst.Methods.Phys.Res.. A. 127-131 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] M.Niraula et al: "Improved spectrometric performance of CdTe radiation detectors in a p-i-n design"Appl.Phys.Ltt.. 75. 2322-2324 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] Y.Hatanaka et.al.: "Heavy p-type doping of ZnSe-based II-VI semiconductors" SPIE. 3283. 78-86 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Y.Hatanaka et.al.: "Heavily doped p-type ZnSe layer formation by excimer laser doping" J.Cryst.Growth. 184/185. 425-428 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] T.Aoki et.al: "Excimer laser doping for p^+-ZnSe layer formation" Proc.of 2nd Inter.Sym.on BLLED. 78-81 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] M.Niraula et.al.: "High energy flux detector using CdTe p-i-n layers" Mat.Res.Soc.Symp.Proc.478. 287-292 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] M.Niraula et.al.: "Fabrication and performance of p-i-n CdTe high energy flux detector" Abs.of Int.Symp.on Solid State Detectors for the 21th Century. RTD-P05 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] D.Mochizuki et.al: "Excimer laser doping technique for application in an integrated CdTe imaging device" Abs.of Int.Symp.on Solid State Detectors for the 21th Century. RTD-P07 (1998)

    • Related Report
      1998 Annual Research Report

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Published: 1998-04-01   Modified: 2016-04-21  

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