| Project/Area Number |
10450329
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
無機工業化学
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
KOINUMA Hideomi Ceramics Materials and Structures Laboratory, 応用セラミックス研究所, 教授 (70011187)
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| Co-Investigator(Kenkyū-buntansha) |
SUMIYA Masatomo Electrical & Electronic Engineering, Shizuoka University, 工学部, 助手 (20293607)
MATSUDA Akihisa Thin film silicon solar cellssuper Laboratory< Electrotechnical Laboratory, 薄膜シリコン系太陽電池 スーパーラボ, 室長
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| Project Period (FY) |
1998 – 1999
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| Project Status |
Completed (Fiscal Year 1999)
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| Budget Amount *help |
¥14,100,000 (Direct Cost: ¥14,100,000)
Fiscal Year 1999: ¥5,600,000 (Direct Cost: ¥5,600,000)
Fiscal Year 1998: ¥8,500,000 (Direct Cost: ¥8,500,000)
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| Keywords | LD TOF-MS / KCN treatment / a-Si:H / photo degradation / laser ablation / ZnO / precusor / KCN処理a-Si:H / レーザー脱離飛行時間型質量分析器 / 酸化亜鉛 / アモルファスシリコン |
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| Research Abstract |
1. Analysis of LD TOF-MS for a-Si:H films treated with KCN solution
In order to depress the photo degradation of a-Si:H, we treated a-Si:H films with the mixed solution of both KCN (solvent : ethanol 0.1M) and crown ether (18 crown 6-ether, 0.2M) under the various conditions. While a-Si:H films were soaked by 100mW/cmィイD12ィエD1 of Xe lamp for 40 hours, the remarkable degradation was hardly detected for a-Si:H film treated for 4 min. When LD TOF-MS analysis was carried out for a-Si:H films changing KCN treatment time, it was found that the highest threshold energy for the ablation was observed in 3-4 min treatment. Furthermore, SIMS analysis revealed the increase of mass number 26 indicating CNィイD1-ィエD1 ion with the increase of the treatment time. These results indicate that CNィイD1-ィエD1 ion with high coordination could terminate the dangling bonds in a-Si:H and it could depress the light-induced dangling bonds.
2. Analysis of LD TOF-MS for oxide, nitride and ZnS
LD TOF-MS is as sensitive as SIMS for detecting the impurities in material. When we consider the precursors arriving at growing surface in the film deposition method of laser ablation, LD TOF-MS is suitable rather than SIMS. We established the cleaning process for ZnO target.
The nitride materials which can be expected to supply N as p-dopant effectively for achieving p-type ZnO were investigated by LD TOF-MS. Unfortunately, GaN ィイD22ィエD2 and AINィイD22ィエD2 precursors acting as co-dopant were hardly detected. When ZnS material was ablated by laser, ZnS molecular precursor was confirmed. Although ZnS film is conventionally deposited at less than 300℃ due to high vapor pressure of Zn and S, it can be deposited at 800℃ by laser ablation.
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