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Thermodynamic analysis system for vapor phase epitaxy by using internet

Research Project

Project/Area Number 10555003
Research Category

Grant-in-Aid for Scientific Research (B).

Allocation TypeSingle-year Grants
Section展開研究
Research Field Applied materials science/Crystal engineering
Research InstitutionTokyo University of Agriculture & Technology

Principal Investigator

KOUKITU Akinori  Tokyo Univ. of Agriculture & Technology, Department of Applied Chemistry, Prof., 工学部, 教授 (10111626)

Co-Investigator(Kenkyū-buntansha) KUMAGAI Yoshinao  Tokyo Univ. of Agriculture & Technology, Department of Applied Chemistry, Assistant Prof., 工学部, 助手 (20313306)
HAGIWARA Yoichi  Tokyo Univ. of Agriculture & Technology, General Information Processing Center, Associate Prof., 総合情報処理センター, 講師 (40218392)
関 壽  東京農工大学, 工学部, 教授 (70015022)
Project Period (FY) 1998 – 2000
Project Status Completed (Fiscal Year 2000)
Budget Amount *help
¥15,200,000 (Direct Cost: ¥15,200,000)
Fiscal Year 2000: ¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 1999: ¥3,900,000 (Direct Cost: ¥3,900,000)
Fiscal Year 1998: ¥9,200,000 (Direct Cost: ¥9,200,000)
KeywordsNitrides / Thermodynamic analysis / Vapor-solid relation / Internet / Web / Vapor phase epitaxy / MOVPE / HVPE / 化合物半導体 / 固相組成 / ネットワーク / III族窒化物 / 計算機能を有するデータベース / MBE / VPE
Research Abstract

Group III nitrides and their alloys are promising materials for applications to short-wavelength light emitting devices. In particular, fabrication of InGaN-based heterostructures has been extensively studied for violet/blue laser diodes (LDs) by a large number of researchers. Matalorganic vapor-phase epitax (MOVPE) is used generally for the epitaxial growth of these structures.
In this project, we have investigated thermodynamic analysis system for vapor phase epitaxy of the group III nitrides, GaN, InN, AlN, InGaN, AlGaN and AlInN, because the thermodynamic analysis of epitaxial growth system provides usefull information on the growth conditions. The new thermodynamic analysis system which we set up informs favorable conditions for the growth through the internet web to any researchers who want to find out the best conditions.
The web site is http : //epi.chem..tuat.ac.jp/

Report

(4 results)
  • 2000 Annual Research Report   Final Research Report Summary
  • 1999 Annual Research Report
  • 1998 Annual Research Report
  • Research Products

    (25 results)

All Other

All Publications (25 results)

  • [Publications] A.KOUKITU: "Thermodynamic Analysis of the MOVPE Growth of InAlN"Phys.Stat.Sol.. 180. 115-120 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] A.KOUKITU: "Thermodynamic Anaysis of the MOVPE Growth of InGaAlN Quaternary Alloy"J.Crystal Growth. 221. 743-750 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.KUMAGAI: "Growth of Thick Hexagonal GaN Layer on GaAs (111) A Surfaces for Freestanding GaN by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy"Jpn.J.Appl.Phys.. 39. L703-L706 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] M.MAYUMI: "In Situ Gravimetric Monitoring of Decomposition Rate from GaN Epitaxial Surface"Jpn.Appl.Phys.. 39. L707-L709 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.KUMAGAI: "Influence of Growth Temperature on the Crystalline Quality of Hexagonal GaN Layer on GaAs (111)A by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy"Int.Workshop on Nitride Semiconductors, IPAP Conf.Series. 1. 42-45 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] M.MAYUMI: "Thermodynamic Analysis and In Situ Gravimetric Monitoring of GaN Decomposition"Int.Workshop on Nitride Semiconductors, IPAP Conf.Series. 1. 38-41 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] A.KOUKITU: "Thermodynamic Analysis of the MOVPE Growth of InAlN"Phys.Stat.Sol.. 180. 115-120 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] A.KOUKITU: "Thermodynamic Anaysis of the MOVPE Growth of InGaAlN Quaternary Alloy"J.Crystal Growth. 221. 743-750 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.KUMAGAI: "Growth of Thick Hexagonal GaN Layer on GaAs (111) A Surfaces for Freestanding GaN by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy"Jpn.J.Appl.Phys.. 39. L703-L706 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] M.MAYUMI: "In Situ Gravimetric Monitoring of Decomposition Rate from GaN Epitaxial Surface"Jpn.Appl.Phys.. 39. L707-L709 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.KUMAGAI: "Influence of Growth Temperature on the Crystalline Quality of Hexagonal GaN Layer on GaAs (111) A by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy"Int. Workshop on Nitride Semiconductors, IPAP Conf. Series. 1. 42-45 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] M.MAYUMI: "Thermodynamic Analysis and In Situ Gravimetric Monitoring of GaN Decomposition"Int. Workshop on Nitride Semiconductors, IPAP Conf. Series. 1. 38-41 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.KUMAGAI: "Thermodynamics on Halide Vapor-phase Epitaxy of InN using InCl and InCl_3"J.Crystal Growth. 220. 118-124 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] A.KOUKITU: "Thermodynamic Analysis of the MOVPE Growth of InAlN"Phys.Stat.Sol.. 180. 115-120 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] A.KOUKITU: "Thermodynamic Anaysis of the MOVPE Growth of InGaAlN Quaternary Alloy"J.Crystal Growth. 221. 743-750 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.KUMAGAI: "Growth of Thick Hexagonal GaN Layer on GaAs (111) A Surfaces for Freestanding GaN by Metalorganic Hydrogen Chloride Vapor Phase Epita"Jpn.J.Appl.Phys.. 39. L703-L706 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] M.MAYUMI: "In Situ Gravimetric Monitoring of Decomposition Rate from GaN Epitaxial Surface"Jpn.Appl.Phys.. 39. L707-L709 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y,KUMAGAI: "Influence of Growth Temperature on the Crystalline Quality of Hexagonal GaN Layer on GaAs (111) A by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy"Int.Workshop on Nitride Semiconductors, IPAP Conf.Series. 1. 42-45 (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] M.MAYUMI: "Thermodynamic Analysis and In Situ Gravimetric Monitoring of GaN Decomposition"Int.Workshop on Nitride Semiconductors, IPAP Conf.Series. 1. 38-41 (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] A.Koukitu: "Thermodynamic Study on the Role of Hydrogen during the MOVPE Growth of Group I I I Nitrides"Journal of Crystal Growth. 197. 99-105 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] A.Koukitu: "Thermodynamic Analysis on the MOVPE Growth on Nitride Semiconductors Using Hydrazine"Physica Status Solidi. 216. 707-712 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 纐纈(共著): "III族窒化物半導体「結晶成長の熱力学」"培風館. 320 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] A.Koukitu: "Thermodynamic Study of Hydride VPE of GaN" Extend Abstructs of the 17th Electronic Materials Symposium. 65-68 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] A Koukitu: "Thermodynamic study of the role of hydrogen during the MOVPE growth of group III nitridos" J.Crystal Growth. 197. 99-105 (1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] T.Taki: "Investigation of Arsenic Desoiption from GaAs (111)B surface in Atrrospheric Pressure Atomic Layer Epitaxy" Jpn.J.Appl.Phys.37. L1367-L1369 (1998)

    • Related Report
      1998 Annual Research Report

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Published: 1998-04-01   Modified: 2016-04-21  

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