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Development of Mudulation Spectroscopy for Wide-Gap Semiconductors

Research Project

Project/Area Number 10555004
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section展開研究
Research Field Applied materials science/Crystal engineering
Research InstitutionKobe University

Principal Investigator

NISHINO Taneo  Kobe University, Faculty of Engineering, Professor, 工学部, 教授 (60029452)

Co-Investigator(Kenkyū-buntansha) WATANABE Motoyuki  Hamamatsu Photonics K. K., Researcher, システム事業部, 専門部員(研究職)
KITA Takashi  Kobe University, Faculty of Engineering, Research Associate, 工学部, 助手 (10221186)
Project Period (FY) 1998 – 1999
Project Status Completed (Fiscal Year 1999)
Budget Amount *help
¥11,700,000 (Direct Cost: ¥11,700,000)
Fiscal Year 1999: ¥4,000,000 (Direct Cost: ¥4,000,000)
Fiscal Year 1998: ¥7,700,000 (Direct Cost: ¥7,700,000)
KeywordsAtomic Ordering / Quantum Structure / Molecular Beam Epitaxy / Ultra Fase Spectroscopy / Reflectance difference
Research Abstract

The purpose of this research is to establish the technique to analyze exciton condition, impurity condition, and so on in detail with characterizing the band structure of the wide-gap semiconductor in detail. Wide gap semiconductor material is remarkable recently, and development proceeds, and the research that it aimed at the laser application and the electron device application with various wide gap material is being done. In this new development of semiconductor material, detailed band structure evaluation by the optical research is being expected all the more. We developed the new electron-beam modulation spectroscopy that was suitable for the wide gap semiconductor evaluation, and got the following result.
(1)We developed the electron-beam modulation spectroscopy system mounted on the scanning electron microscope(SEM). By utilizing this tequnique, we can perform the modulation spectroscopy from visible to vacuum ultraviolet light region. Furthermore, during the measurement, an exci … More tation area is evaluated with SEM.
(2)Using our developed technique did characterization of bulk diamond crystal and diamond epitaxial films. Precise band-edge structure parameters are not sufficient because that band gap is huge, 5.5 eV, though applications as diamond electron devices are being expected. Here, band structure at the absorption edge of the diamond, band parameters and exciton states have been investigated.
(3)Photoemission spectra were compared with electron-beam modulated reflectance signal, and important knowledge could get it about the change in the bound condition of excitons and the impurities states near the absorption edge
From our research results, we confirmed that the new type electron-beam modulation spectroscopy combined with SEM was effective in the wide gap semiconductor characterization. Moreover, it succeeded in obtaining the information related to band parameters, exciton states, the lattice strain, the piezo-electric field, the crystal defects, and so on from the spectrum analysis, and an outlook to the realization of this new technique was made. Less

Report

(3 results)
  • 1999 Annual Research Report   Final Research Report Summary
  • 1998 Annual Research Report
  • Research Products

    (67 results)

All Other

All Publications (67 results)

  • [Publications] T. Kita: "Spin-Polarized Excitons in Long-Range Ordered Ga_<0.5>In_<0.5>P"Phys. Rev. B. Vol. 57, No. 24. R15044-R15047 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] S. Abe: "Valence State Analysis of Ca and Si in CaSi_2 during CaSi_2-H_2O Reaction"J. Mater. Res.. (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] N. Tsukada: "Laser-Induced Enhancement of Electron Tunneling via an Excited State in an Asymmetric Coupled-Quantum-Well"Jpn. J. Appl. Phys.. Vol. 37, No. 5A. 2476-2377 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] N. Tsukada: "Rotational Transfer and Dynamical Bunching of an Electron in Three Coupled Quantum Dots Induced by a Circularly Polarized Electric field"Solid State Electron. Vol. 42, No.7-8. 1273-1280 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K. Yamashita: "Carrier Localization Effects in Energy Up Conversion at Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P/GaAs Heterointerface"J. Appl. Phys.. Vol. 84, No. 1. 359-363 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T. Kita: "Band-Edge Structure of Diamond Films Grown on Silicon"Diamond Film and Technology. Col. 8, No. 5. 355-360 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] H. Nakayama: "Monte-Carlo Master Equation Method for a Simulation of an Epitaxial Growth Dynamics of Compound and Alloy Semiconductors"Proc. 17th Electronic Materials Symposium, Izunagaoka. 169 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K. Yamashita: "Time-Resolved Up-Converted Photoluminescence at Semiconductor Heterointerface"Proc. 17th Electronic Materials Symposium, Izunagaoka. 129 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] S. Abe: "Synthesis of Quasi Two-Dimensional Photoluminescence CaSi_2 and FeSi_2 by Solid Reaction on Si (111) Substrate"Proc. Int. Conf. Solid Films & Surfaces. (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T. Kita: "Spin-Polarized Excitons in Long Range Ordered Ga_<0.5>In_<0.5>P"Proc. 10th International Conference on Indium Phosphide and Related Materials, Tsukuba. 525-528 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K. Yamashita: "Efficiency of Photoluminescence Up-Conversion at (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P and GaAs Heterointerface"Proc. 10th International Conference on Indium Phosphide and Related Materials, Tsukuba. 521-524 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] S. Abe: "Auger Electron Spectroscopy of Super-Doped Si : Mn Thin Films"Proc. 9th International Conference on Solid Films and Surfaces, Denmark. (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T. Kita: "Observations of Ordering-Induced Indirect to Direct Transition in AlGaInP (Invited Paper)"Abstr. 40th Electronic Materials Conference. 27 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K. Yamashita: "Carrier-Relaxation Process in Time-Resolved Up-Converted Photoluminescence at Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P/GaAs Heterointerface"Jpn. J. Appl. Phys.. Vol. 38, No. 2B. 1001-1003 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T. Kita: "Dynamic Process of Anti-Stokes Photoluminescence at a Long-Range Ordered Ga_<0.5>In_<0.5>P/GaAs Heterointerface"Phys. Rev. B. Vol. 59, No. 23. 15358-15362 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T. Kita: "Self-Organized Process of InAs-Quantum Dots Monitored by Reflectance-Difference Spectroscopy"Inst. Phys. Conf. Ser., No. 162. Chapter 9. 457-462 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K. Yamashita: "Linear Electrooptic Effect in Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P"J. Appl. Phys.. Vol. 86, No. 6. 3140-3143 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T. Kita: "Energy Relaxation by Multiphonon Processes in Partially Ordered Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P"Proc. 11th International Conference on Indium Phosphide and Related Materials, Davos. 159-162 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K. Yamashita: "Relaxation Process of Photoexcited Carriers in GaAs/InAs/GaAs Quantum Structures"Proc. 18th Electronic Materials Symposium, Kii-Shirahama. 39-40 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T. Kita: "Reflectance-Difference Spectroscopy of Two-Dimensional InAs during Stransk-Krastanov Formation of Quantum Dots"Proc. 18th Electronic Materials Symposium, Kii-Shirahama. 141-142 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T. Kita: "Dynamics Process of Two-Dimensional InAs Growth in Stranski-Krastanov Mode"Physica E. (in press). (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T. Kita: "Time-Resolved Observation on Anti-Stokes Photoluminescence at Ordered Ga_<0.5>In_<0.5>P"Journal of Luminescence. (in press). (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K. Yamashita: "Initial Stages of InAs-Quantum Dots Formation Studies by Reflectance-Difference spectroscopy and Photoluminescence"Inst. Phys. Conf. Ser.. (in press). (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T. Kita: "Self-Assembled Growth of InAs-Quantum Dots and Postgrowth Behavior Studied by Reflectance-Difference Spectroscopy"Applied Surface Science. (in press). (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T.Kita, M.Sakurai, K.Bhattacharya, K.Yamashita, T.Nishino, C.Geng, F.Scholz, and H.Schweizer: "Spin-Polarized Excitons in Long-Range Ordered GaィイD20.5ィエD2InィイD20.5ィエD2P"Phys. Rev. B. Vol.57, No.24. R15044-R15047 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] S.Abe, H.Nakayama, T.Nishino and S.Iida: "Valence States Analysis of Ca and Si in CaSiィイD22ィエD2 during CaSiィイD22ィエD2-HィイD22ィエD2O Reaction"J. Mater. Res.. Vol.13, No.5. 1401-1404 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] N.Tsukada, M.Gotoda, T.Isu, M.Nunoshita and T.Nishino: "Laser-Induced Enhancement of Electron Tunneling via an Excited State in an Asymmetric Coupled-Quantum-Well"Jpn. J. Appl. Phys.. Vol.37, No.5A. 2476-2377 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] N.Tsukada, M.Gotoda, M.Nunoshita and T.Nishino: "Rotational Transfer and Dynamical Bunching of an Electron in Three Coupled Quantum Dots Induced by a Circularly Polarized Electric field"Solid State Electron. Vol.42, No.7-8. 1273-1280 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K.Yamashita, T.Kita, and T.Nishino: "Carrier Localization Effects in Energy Up Conversion at Ordered (AlィイD20.5ィエD2GaィイD20.5ィエD2)ィイD20.5ィエD2InィイD20.5ィエD2P/GaAs Heterointerface"J. Appl. Phys.. Vol.84, No.1. 359-363 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T.Kita, A.Mochida, T.Nishino, A.Hatta, T.Ito, and A.Hiraki: "Band-Edge Structure of Diamond Films Grown on Silicon"Diamond Film and Technology. Vol.8, No.5. 355-360 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] H.Nakayama, T.Morikawa, T.Ekaitsu and T.Nishino: "Monte-Calro Master Equation Method for a Simulation of an Epitaxial Growth Dynamics of Compound and Alloy Semiconductors"Proc. 17th Electronic Materials Symposium, Izunagaoka. 169 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K.Yamashita, T.Kita, H.Nakayama, and T.Nishino: "Time-Resolved Up-Converted Photoluminescence at Semiconductor Heterointerface"Proc. 17th Electronic Materials Symposium, Izunagaoka. 129 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] S.Abe, K.Aoyagi, H.Nakayama, T.Nishino, H.Ohta and E.Kulatov: "Synthesis of Quasi Two-Dimensional CaSiィイD22ィエD2 and FeSiィイD22ィエD2 by Solid Phase Reaction on Si(111) Substrate"Proc. Int. Conf. Solid Films & Surfaces. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T.Kita, K.Bhattacharya, K.Yamashita, T.Nishino, C.Geng, F.Scholz, and H.Schweizer: "Spin-Polarized Excitons in Long-Range Ordered GaィイD20.5ィエD2InィイD20.5ィエD2P"Proc 10th International Conference on Indium Phosphide and Related Materials, Tsukuba. 525-528 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K.Yamashita, T.Kita, T.Nishino, and M.Oestreich: "Efficiency of Photoluminescence Up-Conversion at (AlィイD20.5ィエD2GaィイD20.5ィエD2)ィイD20.5ィエD2InィイD20.5ィエD2P and GaAs Heterointerface"Proc. 10th International Conference on Indium Phosphide and Related Materials, Tsukuba. 521-524 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] S.Abe, K.Yamashita, Y.Nakashima, S.Okubo, T.Kita, H.Nakayama, T.Nishino, H.Yanagi, H.Ohta: "Auger Electron Spectroscopy of Super-Doped Si : Mn Thin Films"Proc. 9th International Conference on Solid Films and Surfaces, Denmark. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T.Kita, K.Yamashita, and T.Nishino: ""Observations of Ordering-Induced Indirect to Direct Transition in AlGaInP" AiInvitedAj"Abstr. 40th Electronic Materials Conference, Charlottesville. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K.Yamashita, T.Kita, T.Nishino, and M.Oestreich: "Carrier-Relaxation Process in Time-Resolved Up-Converted Photoluminescence at Ordered (AlィイD20.5ィエD2GaィイD20.5ィエD2)ィイD20.5ィエD2InィイD20.5ィエD2P/GaAs Heterointerface"Jpn. J. Appl. Phys.. Vol.38, No.2B. 1001-1003 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T.Kita, T.Nishino, C.Geng, F.Scholz, and H.Schweizer: "Dynamic Process of Anti-Stokes Photoluminescence at a Long-Range Ordered GaィイD20.5ィエD2InィイD20.5ィエD2P/GaAs Heterostructure"Phys. Rev. B. Vol.59, No.23. 15358-15362 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T.Kita, T.Hagihara, K.Yamashita, and T.Nishino: "Self-Organized Process of InAs-Quantum Dots Monitored by Reflectance-Difference Spectroscopy"Inst. Phys. Conf. Ser.. No.162, Chapter9. 457-462 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K.Yamashita, T.Kita, and T.Nishino: "Linear Electrooptic Effect in Ordered (AlィイD20.5ィエD2GaィイD20.5ィエD2)ィイD20.5ィエD2InィイD20.5ィエD2P"J. Appl. Phys.. Vol.86, No.6. 3140-3143 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T.Kita, M.Sakurai, K.Yamashita, and T.Nishino: "Energy Relaxation by Multiphonon Processes in Partially Ordered (AlィイD20.5ィエD2GaィイD20.5ィエD2)ィイD20.5ィエD2InィイD20.5ィエD2P"Proc. 11th International Conference on Indium Phosphide and Related Materials, Davos. 159-162 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K.Yamashita, T.Kita, and T.Nishino: "Relaxation Process of Photoexcited Carriers in GaAs/InAs/GaAs Quantum Structures"Proc. 18th Electronic Materials Symposium, Kii-Shirahama. 39-40 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T.Kita, K.Yamashita, H.Tango, and T.Nishino: "Reflectance-Difference Spectroscopy of Two-Dimensional InAs during Stranski-Krastanov Formation of Quantm Dots"Proc. 18th Electronic Materials Symposium, Kii-Shirahama. 141-142 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T.Kita, K.Yamashita, H.Tango, and T.Nishino: "Dynamic Process of Two-Dimensional InAs Growth in Stranski-Krastanov Mode"Physica E. (in press). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T.Kita, T.Nishino, C.Geng, F.Scholz, and H.Schweizer: "Time-Resolved Observation of Anti-Strokes Photoluminescence at Ordered GaィイD20.5ィエD2InィイD20.5ィエD2P and GaAs Interfaces"Journal of Luminescence. (in press). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K.Yamashita, T.Kita and T.Nishino: "Initial Stages of InAs-Quantum Dots Formation Studies by Reflectance-Difference Spectroscopy and Photoluminescence"Inst. Phys. Conf. Ser.. (in press). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T.Kita, K.Tachikawa, H.Tango, K.Yamashita, and T.Nishino: "Self-Assembled Growth of InAs-Quantum Dots and Postgrowth Behavior Studied by Reflectance-Difference Spectroscopy"Applied Surface Science. (in press). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] A.Shimizu, M.Ofuji, S.Abe, H.Nakayama, and T.Nishino: "Structual Evolution and Valence-Electron State Change During Ultra Thin Silicon Oxide Growth"Applied Surface Science. (in press). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K.Yamashita: "Carrier-Relaxation Process in Time-Resolved Up-Converted Photoluminescence at Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P/GaAs Heterointerface"Jpn.J.Appl.Phys.. Vol.38,No.2B. 1001-1003 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] T.Kita: "Dynamic Process of Anti-Stokes Photoluminescence at a Long-Range Orderd Ga_<0.5>In_<0.5>P/GaAs Heterostructure"Phys.Rev.B. Vol.59,No.23. 15358-15362 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] T.Kita: "Self-Organized Process of InAs-Quantum Dots Monitored by Reflectance-Difference Spectroscopy"Inst.Phys.Conf.Ser.. No.162,Chapter9. 457-462 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] K.Yamashita: "Linear Electrooptic Effect in Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P"J.Appl.Phys.. Vol.86,No.6. 3140-3143 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] T.Kita: "Energy Relaxation by Multiphonon Processes in Partially Ordered (Al_<0.5>Ga_<0.5>)_<0.5>In_<0.5>P"Proc.11th International Conference on Indium Phosphide and Related Materials,Davos. 159-162 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] K.Yamashita: "Relaxation Process of Photoexcited Carriers in GaAs/InAs/GaAs Quantum Structures"Proc.18th Electronic Materials Symposium,Kii-Shirahama. 39-40 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] T.Kita: "Reflectance-Difference Spectroscopy of Two-Dimensional InAs duing Stranski-Krastanov Formation of Quantm Dots"Proc.18th Electronic Materials Symposium,Kii-Shirahama. 141-142 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] T.Kita: "Dynamic Process of Two-Dimensional InAs Growth in Stranski-Krastanov Mode"Physica E. (in press). (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] T.Kita: "Time-Resolved Observation of Anti-Stokes Photoluminescence at Ordered Ga_<0.5>In_<0.5>P and GaAs Interfaces"Journal of Luminescence. (in press). (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] K.Yamashita: "Initial Stages of InAs-Quantum Dots Formation Studies by Reflectance-Difference Spectroscopy and Photoluminescence"Inst.Phys.Conf.Ser.. (in press). (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] T.Kita: "Self-Assembled Growth of InAs-Quantum Dots and Postgrowth Behavior Studied by Reflectance-Difference Spectroscopy"Applied Surface Science. (in press). (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] A.Shimizu: "Structual Evolution and Valence-Electron State Change During Ultra Thin Silicon Oxide Growth"Applied Surface Science. (in press). (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] N.Tsukada: "Rotational transfer and dynamical bunching of an electron in three coupled guntum dots irduced by a civculaly plorized electric field" Solid State Electron. Vol.42 No.7-8. 1273-1280 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] N.Tsukada: "Laser-induced enhancement of electron tunneling via an excited state in an usymmetric coupled-guntum well" Japanese Journal of Applied Physics. Vol.37 No.5A. 2476-2377 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] S.Abe: "Valence state analysis of Ca and Si in CaSi_2 during CaSi_2-H_2O reaction" Journal of Materials Research. Vol.13 No.5. 1401-1404 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] T.Kita: "Observation of ordered-induced indirect to direct transition in AlGaInP" Proc.Electrone Materials Contexerces(Invited). 40th. 27-27 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] K.Yamashita: "Carrier localization effects in energy up conversion at ordered(AlasGaos)as Inos P/GaAs heterointerface" Journal of Applied Physics. Vol.84 No.1. 359-363 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] T.Kita: "Spin pelarization of exciton luminescence from ordered GaasInasP" Physical Review B. Vol.57 No.24. 15044-15047 (1998)

    • Related Report
      1998 Annual Research Report

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Published: 1998-04-01   Modified: 2016-04-21  

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