| Project/Area Number |
10555022
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
Applied physics, general
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| Research Institution | KYOTO UNIVERSITY |
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Principal Investigator |
TACHIBANA Kunihide Kyoto University, Graduate School of Engineering, Professor, 工学研究科, 教授 (40027925)
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| Co-Investigator(Kenkyū-buntansha) |
NAKAMURA Toshihiro Kyoto University, Graduate School of Engineering, Instructor, 工学研究科, 助手 (90293886)
YASAKA Yasuyoshi Kyoto University, Graduate School of Engineering, Associate Professor, 工学研究科, 助教授 (30109037)
ONO Kouichi Kyoto University, Graduate School of Engineering, Professor, 工学研究科, 教授 (30311731)
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| Project Period (FY) |
1998 – 1999
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| Project Status |
Completed (Fiscal Year 1999)
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| Budget Amount *help |
¥10,800,000 (Direct Cost: ¥10,800,000)
Fiscal Year 1999: ¥4,100,000 (Direct Cost: ¥4,100,000)
Fiscal Year 1998: ¥6,700,000 (Direct Cost: ¥6,700,000)
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| Keywords | Plasma Processing / Microstructure Etching / Microscopic Interferometry / In-process Monitoring / Two-dimensional Shape Monitoring / Two-dimensional Rate Monitoring |
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| Research Abstract |
In ULSI (ultra large scale integration) fabrication, an in-situ monitoring tool for high-aspect-ratio pattern processing is required. In this work we have aimed the development and its performance characterization of a new diagnostic method based on an interferometric technique combined with an optical microscope. In the first year, we developed the basic construction of two-dimensional interferometric microscopy by using a monochromatic laser source, a Michelson interferometer and a high sensitive CCD (charge coupled device) camera. In the second year, we put much effort to solve a tough problem due to the disturbance by mechanical vibrations by adopting a mechanically stiff structure and a computational technique for compensating the distortion.
In the latter half of this project, we tried to apply this technique to a realistic problem. One of the urgent problem in the currently used plasma etching process of SiO2 is the improvement of etching selectivity to underlying or protecting materials such as Si, SiィイD23ィエD2 NィイD24ィエD2 and photo-resist. We used this method in the precise in-situ measurement of etching rates for these materials under various plasma conditions of fluorocarbon gases. From the results the reactions in the gas phase and on the substrate surface and their controlling methods are argued for realizing better selectivity.
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