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LONG-WAVELENGTH SEMICONDUCTOR LASERS FABRICATED ON GaAs SUBSTRATES USING NEW III-V ALLOYS

Research Project

Project/Area Number 10555105
Research Category

Grant-in-Aid for Scientific Research (B).

Allocation TypeSingle-year Grants
Section展開研究
Research Field Electronic materials/Electric materials
Research InstitutionSHIMANE UNIVERSITY

Principal Investigator

KAJIKAWA Yasutomo  SHIMANE UNIVERSITY, INTERDISCIPLINARY FACULTY OF SCIENCE AND ENGINEERING, ASSOCIATE PROFESSOR, 総合理工学部, 助教授 (00294364)

Co-Investigator(Kenkyū-buntansha) MIHASHI Yutaka  MITSUBISHI ELECTRIC CORP., HIGH FREQUENCY & OPTICAL SEMICONDUCTOR DIV., MANAGER, 高周波光素子事業総括部, グループマネージャー(研究職)
NAGAI Yutaka  MITSUBISHI ELECTRIC CORP., HIGH FREQUENCY & OPTICAL SEMICONDUCTOR DIV., ASSISTANT MANAGER, 高周波光素子事業総括部, 主幹(研究職)
MORITANI Akihiro  SHIMANE UNIVERSITY, INTERDISCIPLINARY FACULTY OF SCIENCE AND ENGINEERING, PROFESSOR, 総合理工学部, 教授 (70029304)
Project Period (FY) 1998 – 2000
Project Status Completed (Fiscal Year 2000)
Budget Amount *help
¥12,600,000 (Direct Cost: ¥12,600,000)
Fiscal Year 2000: ¥1,300,000 (Direct Cost: ¥1,300,000)
Fiscal Year 1999: ¥5,700,000 (Direct Cost: ¥5,700,000)
Fiscal Year 1998: ¥5,600,000 (Direct Cost: ¥5,600,000)
KeywordsCOMPOUND SEMICONDUCTOR / LASER DIODE / MOLECULAR BEAM EPITAXY / ALLOYED CRYSTAL / CRYSTAL GROWTH / OPTICAL COMMUNICATION / OPTICAL DEVICE / レーザーダイオード
Research Abstract

(1) Molecular beam epitaxial growth of InTlAs on InAs substrates has been performed. It has been confirmed that the existence of InTlAs having a Tl content of 0.12% by secondary ion mass spectrometry combined with Rutherford back scattering spectrometry.
(2) A TlGaAs epitaxial layer having a Tl content of 2.8% has been grown on GaAs substrates by molecular beam epitaxy at a low growth temperature. The effect of the arsenic flux on the low-temperature growth has been investigated.
(3) It has been found that, using solid boron as the source of the molecular beam, the boron flux is not sufficient for the growth of BGaAs even when the effusion-cell temperature is raised as high as 2000℃, Instead of the high-temperature effusion-cell for solid boron. a gas-source cell for triethylboron has been attached to the molecular-beam epitaxial growth chamber.
(4) The polarization anisotropy of the interband transition in strained quantum well grown on various (111) substrates has been calculated on the basis of theory in which the effect of the spin-orbit split-off band is included, assuming the infinite barrier height. Furthermore. the ground state of the valence band in strained quantum wells grown on the (110) substrate has been calculated, taking the effect of the finiteness of the bartier height.
(5) Quasi-periodic faceting has been observed on the grown surfaces of GaAs and AlGaAs on the vicinal (110) GaAs by atomic force microscopy. Each stage of epitaxial growth of an AlGaAs/InGaAs/AlGaAs double-hetrojunction structure has been also characterized by atomic force microscopy.
(6) A photoluminescence excitation spectroscopy system has been constituted using a wavelength tunable pulse laser.

Report

(4 results)
  • 2000 Annual Research Report   Final Research Report Summary
  • 1999 Annual Research Report
  • 1998 Annual Research Report
  • Research Products

    (15 results)

All Other

All Publications (15 results)

  • [Publications] H.Kizuki: "Observation of quasi periodic faceting both MOCVD-grown and on gas-etched surfaces of vicinal (110) GaAs substrates"Journal of Crystal Growth. 194. 277-285 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kajikawa: "Optical anisotropy of (11l)-oriented strained quantum-wells calculated with the effect of the spin-orbit split-off band"Journal of Applied Physics. 86. 5663-5677 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] H.Kizuki: "Quasi-Persistent photoconductivity of double-heterojunction pseudomorphic high-electron-mobility transistor epitatial wafers"Journal of Crystal Growth. 209. 440-444 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 梶川靖友: "GaAs基板上の長波長帯光通信用レーザの開発に向けたGaAs基板上のTlGaAsのMBE成長の試み"島根大学総合理工学部紀要シリーズA. 30. 101-108 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kajikawa: "X-ray diffraction measurements on lattice mismatch of InTlAs grown on InAs substrates"Japanese Journal of Applied Physics. 40. 28-33 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Kizuki H, Kajikawa Y, Hisa Y and Mihashi Y: "Observation of quasiperiodic faceting both on MOCVD-grown and on gas-etched surfaces of vicinal (110) GaAs substrates"Journal of Crystal Growth. 194. 277-285 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Kajikawa Y: "Optical anisotropy of (111)-oriented strained quantum-wells calculated with the effect of the spin-orbit split-off band"Journal of Applied Physics. 86. 5663-5677 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Kizuki H, Kouji Y, Hayafuji N, and Kajikawa Y: "Quasi-persistent photo-conductivity of double-heterojunction pseudomorphic high-electron-mobility transistor epitaxial wafers"Journal of Crystal Growth. 209. 440-444 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Kajikawa Y, Asabina S: "MBE growth of TlGaAs on GaAs substrates for fablicating long-wavelength laser diodes on GaAs substrates"Memoirs of the Faculty of Science and Engineering Shimane University Series A. 30. 101-108 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Kajikawa Y: "X-ray diffraction measurements on lattice mismatch of InTlAs grown on InAs substrates"Japanese Journal of Applied Physics. 40. 28-33 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kajikawa: "X-Ray Diffraction Measurements on Lattite Mismatch of InTlAs Grown on InAs Substrates"Japanese Journal of Applied Physics Part 1.. Vol.40,No.1. 28-33 (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.Kajikawa: "Optical@anisotropy@of@(11l)-oriented@strained@guantum-wells@calculated@with@the@effect@of@the@spin-orbit@split-off@band"Journal of Applied Physics. 86. 5663-5677 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] H.Kizuki: "Quasi-persistent@photoconductivity@of@double-heterojunction@pseudomorphic@high-electron-mobility@transistor@epitaxial@waters"Journal of Crystal Growth. 209. 440-444 (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] 梶川靖友: "GaAs基板上の長波長帯光通信用レーザの開発に向けたGaAs基板上のTIGaAsのMBE成長の試み"島根大学総合理工学部紀要シリーズA. 33. 101-108 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] H.Kizuki: "Observation of quasiperiodic faceting both on MOCVD-grown and on gas-etched surface of vicinal (110)GaAs・substrates" Journal of Crystal Growth. 194. 277-285 (1998)

    • Related Report
      1998 Annual Research Report

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Published: 1998-04-01   Modified: 2016-04-21  

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