| Project/Area Number |
10555247
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
Material processing/treatments
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| Research Institution | Nagoya University |
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Principal Investigator |
SUGIMURA Hiroyuki Nagoya University, Associate Prof., 工学研究科, 助教授 (10293656)
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| Co-Investigator(Kenkyū-buntansha) |
NAKAGARI Nobuyuki Nikon Co., Research Associate, ニコン, 主幹研究員
INOUE Yasushi Nagoya University, Research Associate, 工学研究科, 助手 (10252264)
TAKAI Osamu Nagoya University, Prof., 工学研究科, 教授 (40110712)
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| Project Period (FY) |
1998 – 1999
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| Project Status |
Completed (Fiscal Year 1999)
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| Budget Amount *help |
¥10,900,000 (Direct Cost: ¥10,900,000)
Fiscal Year 1999: ¥4,900,000 (Direct Cost: ¥4,900,000)
Fiscal Year 1998: ¥6,000,000 (Direct Cost: ¥6,000,000)
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| Keywords | Organic Thin Film / Self-Assembled Monolayer / Organosilane / UV cleaning / Nanofabrication / Lithography / Resist / Atomic force microscopy |
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| Research Abstract |
1) Preparation of ultra-thin resist films based on vapor phase self-assembly
Organosilane self-assembled monolayers (SAM) have been prepared by a chemical vapor deposition method. Prior to the SAM formation, substrates were photochemically cleaned using vacuum ultra-violet light generated oxygen radicals. The SAMs were formed in vapor phase. This method requires no solvent both for coating and rinsing. Thickness of the SAM-resists could be controlled in the range of 0.2 - 2.0 nm.
2) Chemical resistivity of the SAM resists
In order to elucidate that the SAMs can be used as etching masks, chemical resistivity of the SAMs to wet etching in hydrofluoric acid and fry etching were studied. The SAMs have been found to show excellent resistivities to the etchings, although their thickness were less than 2nm. By using the SAMs mask, 50 nm deep trenches could be fabricated by the plasma etching.
3) Lithography using SAM resist
An alkylsilane SMA less than 2 nm in thickness has been successfully appli
… More
ed to the resist for VUV-photolithography and scanning probe lithography. The image of a photomask was printed on the SAM through its photodecomposition. On the other hand, an AFM-probe scanning pattern was written on the SAM due to its electrochemical degradation locally induced beneath the AFM-probe tip. These micro or nano-scale pattern could be transferred into the Si substrates by wet chemical etching or dry plasma etching. At present, features of minimum width of 2000 nm and 20 nm were fabricated by photolithography and the scanning probe lithography, respectively.
In addition, we have demonstrated nanostructuring of insulator based on the current-injecting AFM-lithography. A multilayered resist film with electrical conductivity was employed. This resist consisted of triple layers, that is, a-Si, its photochemical oxide and SAM with thicknesses of 20, 2 and 2 nm, respectively. Nanoscale patterns were first defined by AFM in the SAM. These patterns were then transferred into the a-Si layer through the 2-step resist developing process. Finally, the substrate SiO2 was nanostructured using the developed resist as an etching mask. Less
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