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Development of precision goniometer compatible with oxygen atmosphere and ultrahigh temperature for surface analyses of pulsed laser deposition oxide thin films

Research Project

Project/Area Number 10555308
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section展開研究
Research Field 無機工業化学
Research InstitutionTokyo Institute of Technology

Principal Investigator

KAWASAKI Masashi  Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Associate Professor, 大学院・総合理工学研究科, 助教授 (90211862)

Co-Investigator(Kenkyū-buntansha) 川崎 雅司  東京工業大学, 大学院・総合理工学研究科, 助教授 (90211862)
Project Period (FY) 1998 – 1999
Project Status Completed (Fiscal Year 1999)
Budget Amount *help
¥13,700,000 (Direct Cost: ¥13,700,000)
Fiscal Year 1999: ¥4,400,000 (Direct Cost: ¥4,400,000)
Fiscal Year 1998: ¥9,300,000 (Direct Cost: ¥9,300,000)
KeywordsGoinometer / Growth dynamics / Surface characterization tools / Pulsed laser deposition / Laser heating / Nd:YAG laser / Step-flow growth mode / Bearings / Optical fiber / マイクロゴニオメータ / レーザ加熱 / STM / イオン散乱
Research Abstract

The goal of this study is to develop a precise goniometer which can handle the specimen in an environment of any given oxygen pressure from UHV to atmospheric pressure at an elevated temperature of over 1000℃ without any magnetic field noise which would be introduced if the specimen is heated by electric current. Therefore, we chose laser beam as a heat source, In the first year, we have developed simple heating stage and optics for using a cw Nd:YAG laser beam to accomplish highest heating temperature of 1400℃. In the second year, special optical fiber and optics were designed and fabricated to fit this technique to a goniometer having 6-axis motion. The bearings which allow the sample stage to rotate smoothly at high temperature was the most difficult part of this study. Finally, we could fabricate the goniometer having the proposed specification.

Report

(3 results)
  • 1999 Annual Research Report   Final Research Report Summary
  • 1998 Annual Research Report
  • Research Products

    (22 results)

All Other

All Publications (22 results)

  • [Publications] M. Lippmaa: "Step-flow growth of SrtiO_3 thin films with a dielectric constant exceeding"Appl. Phys. Lett.. 74. 3543-5345 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] S. Ohashi: "Compact laser molecular beam epitaxy system using laser heating of substrat for oxide film growth"Rev. Sci. Instrum.. 70. 178-183 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] N. Nakagawa: "Analysis of SrtiO_3 Step-Flow Growth by using RHEED"J. Korean Phys. Soc.. 35. S130-S133 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M. Lippmaa: "dynamics of SrtiO_3 surface during wet etching and high temperature"Ferroelectrics. 224. 373-378 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M. Lippmaa: "G-axis microgoniometer equipped with an ultra-high temperature heater for the analysis of oxide epitaxy dynamics by ion scattering and scanning tunneling microscopy"Proceedings of the third Synposium on Atomic Scale Surface and Interface dynamics. 3. 157-160 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M. Lippmaa: "Growth mode control of SrtiO_3 epitaxy"Proceedings of the third Synposium on Atomic Scale Surface and Interface dynamics. 3. 171-174 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M. Lippmaa: "Growth dynamics of oxide thin films at temperature above 1000°C"Physica C. (in press).

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M. Lippmaa: "Step-flow growth of SrTiOィイD23ィエD2 thin films with a dielectric constant exceeding 10ィイD14ィエD1"Appl. Phys. Lett.. 74. 3534-3545 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] S. Ohashi: "Compact laser molecular beam epitaxy system using laser heating of substrate of oxide film growth"Rev. Sci. Instrum.. 70. 178-183 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] N. Nakagawa: "Analysis of SrTiOィイD23ィエD2 Step-flow Growth by using RHEED"J. Korean. Phys. Sco.. 35. S130-S133 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M. Lippmaa: "Dynamics of SrTiOィイD23ィエD2 surface during wet etching and high-temperature annealing"Ferroelectrics. 224. 373-378 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M. Lippmaa: "6-axis microgomiometer equipped with an ultra-high temperature heater for the analysis of oxide epitaxy dynamics by ion scattering and scanning tunneling microscopy"Proc. of the 3rd Symp. on Atomic Scale Surface and Interface Dynamics. 3. 157-160 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M. Lippmaa: "Growth mode control of SrTiOィイD23ィエD2 epitaxy"Proc. of the 3rd Symp. on Atomic Scale Surface and Interface Dynamics. 3. 171-174 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M. Lippmaa: "Growth dynamics of oxide thin films at temperature above 1000℃"Physica C. (in press).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M.Lippmaa: ""Step-flow growth of SrTiO_3 thin films with a dielectric constant exceeding 10^4""Appl.Phys.Lett.. 74. 3543-5345 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] S.Ohashi: ""Compact laser molecular beam epitaxy system using laser heating of substrate for oxide film growth""Rev.Sci.Instrum.. 70. 178-183 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] N.Nakagawa: ""Analysis of SrTiO_3 Step-Flow Growth by using RHEED""J.Korean Phys.Soc.. 35. S130-S133 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] M.Lippmaa: ""Dynamics of SrTiO_3 surface during wet etching and high-temperature annealing""Ferroelectrics. 224. 373-378 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] M.Lippmaa: ""6-axis microgoniometer equipped with an ultra-high temperature heater for the analysis of oxide epitaxy dynamics by ion scattering and scanning tunneling microscopy""Proceedings of the third Symposium on Atomic Scale Surface and Interface Dynamics. 3. 157-160 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] M.Lippmaa: ""Growth mode control of SrTiO_3 epitaxy""Proceedings of the third Symposium on Atomic Scale Surface and Interface Dynamics. 3. 171-174 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] M.Lippmaa: ""Growth dynamics of oxide thin films at temperature abouve 1000℃"(in press)"Physica C.

    • Related Report
      1999 Annual Research Report
  • [Publications] S.Ohashi et al.: "Compact laser molecular beam epitaxy system using laser heating of substrate for oxide film growth." Review of Scientific Instruments.70(1). 178-183 (1999)

    • Related Report
      1998 Annual Research Report

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Published: 1998-04-01   Modified: 2016-04-21  

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