| Project/Area Number |
10650003
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tokyo University of Agriculture & Technology |
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Principal Investigator |
SEKI Hisashi Tokyo Univ. of Agriculture & Technology, Department of Applied Chemistry, Prof., 工学部, 教授 (70015022)
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| Co-Investigator(Kenkyū-buntansha) |
KOUKITU Akinori Tokyo Univ. of Agriculture & Technology, Department of Applied Chemistry, Associate Prof., 工学部, 助教授 (10111626)
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| Project Period (FY) |
1998 – 1999
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| Project Status |
Completed (Fiscal Year 1999)
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| Budget Amount *help |
¥4,100,000 (Direct Cost: ¥4,100,000)
Fiscal Year 1999: ¥1,200,000 (Direct Cost: ¥1,200,000)
Fiscal Year 1998: ¥2,900,000 (Direct Cost: ¥2,900,000)
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| Keywords | III nitrides / vapor phase epitaxy / compound semiconductor / gravimetric monitoring / in situ monitoring / GaN / InN / 窒化物 / 表面反応 / 原子層エキタピシー / 表面光吸収法 / 緩衝層 / GaAs基板 / 反応過程 |
|---|
| Research Abstract |
In this study, the growth mechanisms of GaN and InN were investigated with atomic lavel. In order to clarify the growth mechanism, two in situ systems, gravimetric and optical monitorings, were performed. In situ gravimetric monitoring provides the direct information about weight change of the substrate with atomic level, and in situ optical monitoring provides the dynamic information about the reaction on the surface.
The results are shown as follows.
1. At first the growth conditions for the buffer layer were optimized. It was found that high quality GaN epitaxial layer can be growth on the buffer layer of 20-30nm thick.
2. Atomic leyer epitaxy of cubic-GaN on GaAs was achieved, and it was found that high quality cubic-GaN can be growth by this growth method.
3. The polarity dependence of the growth rate and hydrogen-etching rate was obtained.
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