• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Fabrication of novel monolithic optical devices composed of blue laser diodes and ferroelectric optical waveguides

Research Project

Project/Area Number 10650005
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionJapan Advanced Institute of Science and Technology

Principal Investigator

MASUDA Atsushi  Japan Advanced Institute of Science and Technology, School of Materials Science, Research Associate, 材料科学研究科, 助手 (30283154)

Co-Investigator(Kenkyū-buntansha) SHIMIZU Tatsuo  Kanazawa University, Faculty of Engineering, Professor, 工学部, 教授 (30019715)
YAGUCHI Hiroyuki  Saitama University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (50239737)
ONABE Kentaro  University of Tokyo, Graduate School of Frontier Sciences, Professor, 大学院・新領域創成科学研究科, 教授 (50204227)
MORIMOTO Akiharu  Kanazawa University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (60143880)
Project Period (FY) 1998 – 1999
Project Status Completed (Fiscal Year 1999)
Budget Amount *help
¥4,000,000 (Direct Cost: ¥4,000,000)
Fiscal Year 1999: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 1998: ¥3,300,000 (Direct Cost: ¥3,300,000)
Keywordsblue laser diodes / ferroelectric waveguides / nitride semiconductors / ferroelectric oxides / pulsed laser ablation / epitaxial growth / magnesia / resistance against oxidation / 窒化物半導体 / バッファ層 / チタン酸ジルコン酸鉛
Research Abstract

In order to develop novel monolithic optical devices composed of blue laser diodes and ferroelectric optical waveguides, ferroelectric lead zirconate titanate (PZT) films were deposited on gallium nitride (GaN). PZT films were deposited by pulsed laser ablation on cubic GaN prepared on (001) GaAs by metalorganic vapor phase epitaxy for the first time. PZT films were preferentially [100] oriented on GaN with MgO buffer layers although PZT films were randomly oriented without MgO buffer layer. The origin for the difference is thought that MgO buffer layer acts as a diffusion barrier between PZT and GaN.Relationship between the crystallinity and the resistance against oxidation was also studied. It was found that GaN with lower crystallinity shows higher resistivity. It was also revealed that the crystallinity degrades and the surface roughness decreases both with an exposure to oxygen atmosphere around 500 ℃.

Report

(3 results)
  • 1999 Annual Research Report   Final Research Report Summary
  • 1998 Annual Research Report
  • Research Products

    (19 results)

All Other

All Publications (19 results)

  • [Publications] A.Masuda,A.Morimoto,T.Shimizu,H.Yaguchi,K.Onabe他3名: "Fabrication of Pb(Zr, Ti)O_3/MgO/GaN/GaAs structure for optoelectronic device application"Journal of Crystal Growth. 189-190. 227-230 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] A.Morimoto,T.Shimizu他2名: "Effect of nitrogen gas on preparation of Ti-Al-N thin films by pulsed laser ablation"Applied Surface Science. 127-129. 994-998 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K.Onabe,H.Yaguchi他2名: "MOVPE growth and luminescence properties of GaAsN alloys with higher nitrogen concentrations"Physica Status Solidi(a). 176. 231-235 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] A.Masuda他5名: "Mixing mechanism of h-GaN in c-GaN growth on GaAs(001)substrates"Physica Status Solidi(a). 176. 519-524 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] A.Morimoto,T.Shimizu他3名: "LPE-like growth of YIG ferrimagnetic thin films by pulsed laser ablation with molten droplets"Applied Physics A. 69. S703-S706 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] H.Yaguchi,K.Onabe他5名: "Optical characterization of metalorganic vapor-phase epitaxy-grown GaAs_<1-x>N_x alloys using spectroscopic ellipsometry"Journal of Crystal Growth. 221. 481-484 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] A.Masuda, S.Morita, H.Shigeno, A.Morimoto, T.Shimizu, J.Wu, H.Yaguchi and K.Onabe: "Fabrication of Pb(Zr, Ti)O_3/MgO/GaN/GaAs structure for optoelectronic device applications"Journal of Crystal Growth. Vols.189-190. 227-230 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] A.Morimoto, H.Shigeno, S.Morita, Y.Yonezawa and T.Shimizu: "Effect of nitrogen gas on preparation of Ti-Al-N thin films by pulsed laser ablation"Applied Surface Science. Vols.127-129. 994-998 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K.Onabe, D.Aoki, J.Wu, H.Yaguchi and Y.Shiraki: "MOVPE growth and luminescence properties of GaAsN alloys with higher nitrogen concentrations"Physica Status Solidi (a). Vol.176. 231-235 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] A.Hashimoto, H.Wada, T.Ueda, Y.Nishio, A.Masuda and A.Yamamoto: "Mixing mechanism of h-GaN in c-GaN growth on GaAs (001) substrates"Physica Status Solidi (a). Vol.176. 519-524 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] A.Morimoto, Y.Maeda, T.Minamikawa, Y.Yonezawa and T.Shimizu: "LPE-like growth of YIG ferrimagnetic thin films by pulsed laser ablation with molten droplets"Applied Physics A. Vol.69, Suppl.. S703-S706 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] S.Matsumoto, H.Yaguchi, S.Kashiwase, T.Hashimoto, S.Yoshida, D.Aoki and K.Onabe: "Optical characterization of metalorganic vapor-phase epitaxy-grown GaAs_<1-x>N_x, alloys using spectroscopic ellipsometry"Journal of Crystal Growth. Vol.221. 481-484 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] A.Morimoto,T.Shimizu 他3名: "Epitaxial growth of Ge film on Si by pulsed laser ablation using droplets"Proceedings of the 5th International Symposium on Sputtering & Plasma Processes. 19-20 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] A.Hasimoto,A.Masuda 他3名: "Suppression of hexagonal GaN mixing by As_4 molecular beam in cubic GaN growth on GaAs(001) substrates"Journal of Crystal Growth. 201/202巻. 392-395 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] Atsushi Masuda 他5名: "Novel deposition technique of Er-doped a-Si:H combining catalytic CVD and pulsed laser ablation"Journal of Non-Crystalline Solids. (印刷中). (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] A.Masuda, A.Morimoto, T.Shimizu, H.Yaguchi, K.Onabe 他3名: "Fabrication of Pb(Zr, Ti)O_3/MgO/GaN/GaAs structure for ptoelectronic device application" Journal of Crystal Growth. 189/190巻. 227-230 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] H.Yaguchi, K.Onabe 他6名: "Temperature dependence of photoluminescence of GaP_<1-x>N_xalloys" Journal of Crystal Growth. 189/190巻. 496-499 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] J.Wu, H.Yaguchi, K.Onabe 他2名: "Optical transitions in cubic GaN grown on GaAs(100)substrates by metalorganic vapor-phase epitaxy" Journal of Crystal Growth. 189/190巻. 415-419 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] A.Morimoto, T.Shimizu 他3名: "Effect of nitrogen gas on preparation of Ti-Al-N thin films by pulsed laser ablation" Applied Surface Science. 127-129巻. 994-998 (1998)

    • Related Report
      1998 Annual Research Report

URL: 

Published: 1998-04-01   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi