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Growth and doping of ZnTe by synchrotron-radiation-excited epitaxy

Research Project

Project/Area Number 10650014
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionSaga University

Principal Investigator

NISHIO Mitsuhiro  Saga University Electrical & Electronic Engineering, Professor, 理工学部, 教授 (60109220)

Project Period (FY) 1998 – 1999
Project Status Completed (Fiscal Year 1999)
Budget Amount *help
¥2,800,000 (Direct Cost: ¥2,800,000)
Fiscal Year 1999: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 1998: ¥2,000,000 (Direct Cost: ¥2,000,000)
KeywordsSynchrotron-radiation-excited epitaxy / Low temperature growth / Zinc Telluride / Photoluminesence property / Growth characteristic / 低温成長
Research Abstract

Until now, we have shown experimentally that syndrotron-radiation-excited growth is very promising as a non-thermal epitaxial technique. By heralding the world, we have demonstrated that epitaxial growth and atomic layer epitaxy of compound semiconductor (ZnTe) can be realized at room temperature using the synchrotron radiation. It is of great importance that the possibility of the physical property control is examined in order to develop this research. The main purpose of this study is to investigate detailed growth characteristics and photoluminescence properties of ZnTe films grown by synchrotron-radiation-excited growth with and without the impurity addition. Synchrotron radiation ( BL-8A White light ) in UVSOR facility was utilized as a light source. Growth has been carried out at a very low pressure of l0ィイD1-5ィエD1 Torr in order to suppress the gas phase reaction. Basic growth parameters such as VI/II transport rate ratio and substrate temperature and the types of carrier gases w … More ere varied to investigate systematic influence upon growth characteristics (growth rate growth condition variously HREED surface state crystallinity) and crystal quality (mainly, photoluminescence property) of ZnTe films. The substrate temperature range of room temperature-l00℃, which is much lower than the temperature rang for pyrolysis of precursor sources, is chosen to demonstrate usefulness of the utilization of the synchrotron radiation. As the result, we have obtained detailed information on growth characteristics. As for the crystal quality, it is clarified that carbon coming from the precursor sources not incorporated into ZnTe grown layer independent of growth parameters. The crystal quality greatly changes with VI/II transport rate ratio. It is possible to suppress the deep-level emission band associated with defects under a Te rich condition. Also, there is the possibility of p-type doping with the nitrogen carrier gas, since acceptor-related bound exciton is observed predominantly in the photoluminescence spectrum. Less

Report

(3 results)
  • 1999 Annual Research Report   Final Research Report Summary
  • 1998 Annual Research Report
  • Research Products

    (24 results)

All Other

All Publications (24 results)

  • [Publications] Mitsuhiro Nishio, Kazuki Hayashida, Qixin Guo and Hiroshi Ogawa: "Low temperature epitaxial growth of II-VI compound semiconductors using synchrotron radiation as a light source"Current Topics in Crystal Growth Research. 5. 1-26 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 小川博司、西尾光弘: "シンクロトロン放射光を用いた半導体エピタキシャル成長"放射線と産業. 81. 19-24 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 西尾光弘、林田和樹、上徳理、郭其新、小川博司: "有機金属原料を用いたシンクロトロン放射光によるZnTeのホモエピタキシャル成長"日本結晶成長学会誌. 26. 24 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Mitsuhiro NISHIO, Takeshi ENOKI, Yoshiaki MITSUISHI, Qixin GUO and Hiroshi OGAWA: "Homoepitaxial growth of ZnTe by synchrotron radiation using metalorganic sources"UVSOR ACTIVITY REPORT 1998. UVSOR-26. 195-196 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M.Nishio, T.Enoki, Q.X.Guo and H. Ogawa: "Growth characteristics of homoepitaxial ZnTe films deposited by synchrotron radiation using metalorganic sources"Jpn. J. Appl. Phys.. Suppl 38-1. 568-571 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Mitsuhiro NISHIO, Qixin GUO and Hiroshi OGAWA: "Effect of dopant flow rate upon photoluminescene properties in aluminum-doped ZnTe layers grown by MOVPE"Thin Solid Films. 343/344. 512-515 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Mitsuhiro NISHIO, Qixin GUO and Hiroshi OGAWA: "Ohmic contacts to p-type ZnTe using electroless Pd"Thin Solid Films. 343/344. 508-511 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Mitsuhiro NISHIO, Takeshi ENOKI, Yoshiaki MITSUISHI, Qixin GUO and Hiroshi OGAWA: "Homoepitaxial growth of ZnTe by synchrotron radiation using metalorganic sources"Thin Solid Films. 343/344. 504-507 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K.Hayashida, M.Nishio, S.Furukawa, Qixin Guo and H.Ogawa: "Effects of wavelength upon photoluminescene properties of ZnTe layers grown by photoassisted MOVPE"J. Crystal Growth. (in press). (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Mitsuhiro Nishio, kazuki Hayashida, Qixin Guo and Hiroshi Ogawa: "Growth rate characteristics and photoluminescenceproperties of ZnTe in MOVPE system"Appl. Surf. Sci.. (in press). (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Mitsuhiro Nishio, kazuki Hayashida, Qixin Guo and Hiroshi Ogawa: "Effect of VI/II ratio upon photoluminescence properties of aluminum-doped ZnTE layers grown by MOVPE"Appl. Surf. Sci.. (in press). (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M.Nishio,Q.Guo,H.Ogawa: "Effect of dopant flow rate upon photoluminescence properties in aluminum-doped ZnTe layers grown by MOVPE"Thin Solid Films. 343-344. 512-515 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] M.Nishio,Q.Guo,H.Ogawa: "Low temperature epitaxial growth of II-VI compound semiconductors using synchrotron radiation as a light source"Current Topicsin Crystal Growth Reseach. 5. 1-26 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] M.Nishio,T.Enoki,Y.Mitsuishi,Q.Guo,H.Ogawa: "Homoepitaxial growth of ZnTe by synchrotron radiation using metalorganic sources"Thin Solid Films. 343-344. 504 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] M.Nishio,Q.Guo,H.Ogawa: "Ohmic contucts to p-type ZnTe using electroless Pd"Thin Solid Films. 343-344. 508-511 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] M.Nishio,T.Enoki,Q.Guo,H.Ogawa: "Growth Characteristics of Homoepitaxial ZnTe Films Deposited by Synchrotron Radiation Using Metalougunic Sources"Jpn.J.Appl.Phys.. 38. 568-571 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] K.Hayashida,M.Nishio,H.Harada S.Furukawa,Q.Guo,H.Ogawa: "Effects of wave length upon photoluminescence properties of ZnTe 1 ayers grown by photo-assisted MOVPE"J.Crystal Growth. (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] M.Nishio,Q.Guo,H.Ogawa:

    • Related Report
      1999 Annual Research Report
  • [Publications] Mitsuhiro NISHIO: "Effect of dopant flow rate upon photoluminescence properties in aluminum-doped ZnTe layers grown by MOVPE" Thin Solid Films. (1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] Mitsuhiro NISHIO: "Ohmic contacts to p-type ZnTe using electroless Pd" Thin Solid Films. (1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] Mitsuhiro NISHIO: "Homoepitaxial growth of ZnTe by synchrotron radiation using metalorganic sources" Thin Solid Films. (1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] Q.X.Guo: "Deposition of InN thin films by radio frequency magnetron sputtering" Journal of Crystal Growth. 189/190. 466 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Q.X.Gou: "Energy loss spectrum of AlN in the 6-120 eV region" Journal of Crystal Growth. 189/190. 457 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 西尾光弘: "シンクロトロン放射光を用いた化合物半導体薄膜の形成技術の研究開発" 第7回科学技術研究交流シンポジウム Hiroshi Ogawa,Mitsuhiro Nishio, Qixin Gou, Yoshiaki Mitsuishi,. (別冊). 1-5 (1998)

    • Related Report
      1998 Annual Research Report

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Published: 1998-04-01   Modified: 2016-04-21  

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