| Project/Area Number |
10650020
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Meiji University |
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Principal Investigator |
UEKUSA Shinichiro Meiji University, School of Science & Technology, Professor, 理工学部, 教授 (10061970)
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| Project Period (FY) |
1998 – 1999
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| Project Status |
Completed (Fiscal Year 1999)
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| Budget Amount *help |
¥3,500,000 (Direct Cost: ¥3,500,000)
Fiscal Year 1999: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 1998: ¥2,500,000 (Direct Cost: ¥2,500,000)
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| Keywords | rare-earth doped semiconductor / wide band gap / erbium ion / SiC and GaN / optitcal activation / luminescence device / photo luminescence / ion implantation |
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| Research Abstract |
Erbium (Er) -doped semiconductor is a potentially useful material for light-emitting devices in optical communication systems. Since the intra-4f-shell transitions of Er ions cause sharp and temperature-stable luminescence in various host materials at 1.54 μm, which corresponds to the minimum absorption of silica-based optical fibers. Photoluminescence (PL) from ErィイD13+ィエD1 in Er-doped narrow band gap semiconductors (e. g. silicon) is weak and difficult to observe at room temperature (R.T) . We found that thermal quenching of the luminescence of ErィイD13+ィエD1 was suppressed by using SiC and GaN as a host material instead of Si.
(1) Er-related emission were observed at room temperature in both 3C-SiC and 6H-SiC. We found that 3C-SiC and 6H-SiC are suitable to the improvement of thermal quenching of the luminescence. Their thermal quenching were also studied on N and O codoped 3C-SiC and 6H-SiC. We investigated the influence of the introduction of elements on ErィイD13+ィエD1 luminescence in
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3C-SiC:Er and 6H-SiC:Er. From their dose dependencies, the luminescent properties were examined using standard photoluminescence (PL) and photoluminescence excitation (PLE) technique.
(2) Er jmplantation was carried out at 400 KeV and 2MeV. The luminescence properties of ErィイD13+ィエD1 ions on annealing temperature, Er dose and temperature dependencies was investigated. The optimum annealing temperature for 6H-GaN:Er was obtained. N, O and C codoped 6H-GaN were also studied on thermal quenching of ErィイD13+ィエD1 luminescence.
(3) We also found that at least two radiative centers exist, according to the different temperature quenching properties. Their coupling coefficients at the activation energies were studied, respectively in 3C-SiC, 6H-SiC and 6H-GaN. Decay times of their photoluminescences from ErィイD13+ィエD1 Were also examined.
Optical activation for the 1.5μm luminescence of Er doped SiC, GaN and its application to light emitting device were basically and systematically studied. We could observe Er-related emission at R. T. in both SiC:Er and GaN:Er. We are researching on the preparation process for the structure of optical device to increase the luminescence intensity of wide band gap semiconductors. Less
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