| Budget Amount *help |
¥3,400,000 (Direct Cost: ¥3,400,000)
Fiscal Year 1999: ¥1,400,000 (Direct Cost: ¥1,400,000)
Fiscal Year 1998: ¥2,000,000 (Direct Cost: ¥2,000,000)
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| Research Abstract |
The ion beam deposition has attracted special interest as one of the possible evaporation methods of controlling low-temperature synthesis of compound, crystallinity of a film, film orientation, and microstructure. However, there are a number of clarified points regarding elementary processes such as ion scattering, sputtering, and charge-exchange process in the ion-surface atom interactions. Especially, such study has not been reported in the region of ultra low-energy ion important for the advanced film fabrication. In the present study, it is a purpose to systematically examine elementary processes in ion beam deposition of the low-energy. In the period of this study, the possible techniques for the ultra low-energy ion beam deposition and the analysis of the ion beam deposition surfaces were established. Then, the investigation on the interaction between ultra low-energy ion beam and silicon surfaces was carried out using these techniques. Concretely, the low-dimensional surface phases were realized by doing ultra low-energy Bi ion beam deposition onto the silicon clean surfaces. Then, the effects of ion species, ion energy, and dose quantity on the formation of such low-dimensional phase was examined, and the surface structure change was also investigated. And, the structural change of silicon surface with the irradiation by ultra low-energy rare gas also clarified in connection with the Bi ion beam deposition. It was found that in the Si(100) surface, the deposited ions stayed in the topmost surface layer only at the Bi ion beam deposition of 30eV or less, and that in the depositions over its energy, the deposited ions incorporated into the surfaces layers. In the Bi ion beam deposition of 30eV or less, the condition in which a two-dimensional structure of Si(100)-1x1-Bi appeared was found for the first time.
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