| Project/Area Number |
10650039
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied optics/Quantum optical engineering
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| Research Institution | Kanazawa University |
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Principal Investigator |
KUWAMURA Yuji Kanazawa University, Faculty of Engineering, Instructor, 工学部, 講師 (10195612)
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| Co-Investigator(Kenkyū-buntansha) |
YAMADA Minoru Kanazawa University, Faculty of Engineering, Professor, 工学部, 教授 (80110609)
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| Project Period (FY) |
1998 – 1999
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| Project Status |
Completed (Fiscal Year 1999)
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| Budget Amount *help |
¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 1999: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 1998: ¥1,500,000 (Direct Cost: ¥1,500,000)
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| Keywords | semiconductor optical modulators / spatial light modulators / planar-illuminated optical modulators / smart pixcel / optical computer / parallel optical information processing / optical logic / スマート ピクセル |
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| Research Abstract |
1. Development of planar-illuminated semiconductor optical modulators
1-1)Fabrication of a planar-illuminated-type array optical modulator with GaAs system :
Fabrication of an array optical modulator into which 10 × 10 elements were integrated monolithically has been achieved. Each element of the array has been made as a planar-illuminated optical modulator composed of 20 sets of pィイD1+ィエD1-n-nィイD1+ィエD1 : GaAs crystal layers. Perfarmance of 10dB extinction ratio for 7.5V variation of the applied voltage is obtained. The insertion loss is 5dB and the oprating speed is 1.5MHz. A capital letter 'K' was displayed as an application of the array optical modulator.
1-2) Trial to make a planar-illuminated-type optical modulator element with InGaAsP system :
We tried to fabricate a planar-illuminated optical modulator element made of InGaAsP material system. In reality, a planar-illuminated optical modulator element could not be fabricated because of a meltback problem that InGaAs multi-layers dissolve in the solution when re-growth layer of InP is buried. However, fundamental technologies of InGaAs multi-layers crystal growth and fabrication processes so on have been established to make a planar-illuminated-type optical modulator element.
2. Deign of a planar-illuminated-type semiconductor optical modulator with multi-quantum well structures
A planar-illuminated-type semiconductor optical modulator using multi-quantum well structure has been designed in form of tranmision type. To realize low oprating voltage, high extinction ratio and low insertion loss, we proposed a structure in which voltage is applied from the transverse direction of quantum wells through p- and n- conductive layers having a comb-shape. Excellent characteristics in a well-designed device can be predicted as follows : 10〜20dB on-off extinction ratio for 5V variation of the applied voltage, insertion loss lower than 2dB and oprating speed higher than several GHz.
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