• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Theoretical analysis of strain relaxation mechanisms of heteroepitaxial layers

Research Project

Project/Area Number 10650074
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Materials/Mechanics of materials
Research InstitutionThe University of Electro-Communications

Principal Investigator

SHINTANI Kazuhito  Faculty of Electro-Communications, The University of Electro-Communications, Assoc. Prof., 電気通信学部, 助教授 (00162793)

Co-Investigator(Kenkyū-buntansha) 新谷 一人  電気通信大学, 電気通信学部, 助教授 (00162793)
Project Period (FY) 1998 – 1999
Project Status Completed (Fiscal Year 1999)
Budget Amount *help
¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 1999: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 1998: ¥1,200,000 (Direct Cost: ¥1,200,000)
Keywordsheteroepitaxial layers / surface morphology / critical strain / stacking fault / surface step / molecular dynamics simulation / quantum dot / strain relaxation / 分子動力学法 / 臨界波長 / 臨界膜厚 / 原子論的シミュレーション / 表面再構成
Research Abstract

1 The anisotropic linear stability analysis of surface undulations of semiconductor heteroepitaxial layers was performed. Numerical results for SiィイD21-xィエD2GeィイD2xィエD2/Si systems show that the free energy change for the <100> surface undulations is greater than for the <110> undulations, which means surface undulations are likely to be formed in the <100> directions, that the present theory predicts the critical wavelength for the SiィイD20.82ィエD2GeィイD20.18ィエD2/Si system at 444nm which is in good agreement with the experimental value 44Onm, and that the main mechanism of the strain relaxation is the formation of surface undulations at the Ge fraction greater than 0.5 while it is the misfit dislocation generation at the Ge fraction less than 0.5.
2 The molecular dynamics simulations were performed for the dislocation generation from the surface of Si thin films. The Stillinger-Weber potential was used. The effects of surface steps and temperature on the change of the atomic structures are … More investigated. The simulation results show that at the temperatures 500K and 1000K, the energy decrease always occurs if the strain of the system exceeds a critical value whether there exists a surface step or not and whether the strain is compressive or tensile, that the energy decrease occurs due to the formation of (111) stacking faults either at an arbitrary point on the surface if there is no step or at the surface step if there is one, and that both the SィイD2AィエD2 and SィイD2BィエD2 steps can become generation points of stacking faults and the critical strain for the former is smaller from 1% to 2% than for the latter.
3 The atomistic calculations of the strain profiles within GaAs/InAs/GaAs pyramidal quantum dot structures were performed. The most stable atomic structures were obtained by the conjugate gradient minimization of the system energy expressed in terms of the Stillinger-Weber potential. The results show that there arises tensile strain just above the top of the island, which causes the vertical self-ordering of the stacked dots, that the larger the thickness of the wetting layer, the greater the magnitude of the tensile strain, and that the present results are in good agreement with those obtained by the inclusion theory. Less

Report

(3 results)
  • 1999 Annual Research Report   Final Research Report Summary
  • 1998 Annual Research Report
  • Research Products

    (35 results)

All Other

All Publications (35 results)

  • [Publications] Y. Obayashi: "Directional dependence of surface morphological stability of heteroepitaxial layers"Journal of Applied Physics. 84. 3141-3146 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Y. Obayashi: "Anisotropic stability analysis of surface undurations of strained lattice-mismatched layers"Thin Solid Films. 357. 57-60 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 佐藤尚孝: "半導体表面ステップの分子動力学シミュレーション"日本材料科学会平成10年度学術講演大会講演予稿集. 87-90 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 大林克至: "ヘテロエピタキシャル層におけるひずみ緩和機構の解析"日本機械学会第76期全国大会講演論文集(I). 98-3. 649-650 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 菊地幸典: "半導体表面の分子動力学シミュレーション"日本機械学会第76期全国大会講演論文集(I). 98-3. 651-652 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Y. Obayashi: "Anisotropic stability analysis of surface undulations of strained lattice-mismatched layers"Materials Research Society 1998 Fall Meeting Abstracts. 43 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 杉井弘嗣: "共役勾配法による量子ドットの原子論的シミュレーション"日本材料科学会平成11年度学術講演大会講演予稿集. 85-88 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 菊地幸典: "経験的ポテンシャルを用いた量子ドットのひずみ分布の数値解析"日本機械学会1999年度年次大会講演論文集(II). 99-1. 35-36 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 杉井弘嗣: "Ge/Si系のラマン振動数に対するひずみ効果の分子動力学解析"日本機械学会東海支部第49期総会講演会講演論文集. 003-1. 147-148 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 大林克至: "コンプライアント基板上のヘテロエピタキシャル層の臨界膜厚の解析"日本機械学会東海支部第49期総会講演会講演論文集. 003-1. 327-328 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 小林幹宏: "原子シミュレーションによる量子ドットのひずみ分布の解析"日本機械学会東海支部第49期総会講演会講演論文集. 003-1. 329-330 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 本多敦史: "薄膜のひずみ緩和機構に及ぼす表面ステップの影響(分子動力学シミュレーション)"日本材料科学会平成12年度学術講演大会講演予稿集. (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Y. Obayashi: "Directional dependence of surface morphological stability of heteroepitaxial layers"Journal of Applied Physics. vol. 84, no. 6. 3141-3146 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Y. Obayashi: "Anisotropic stability analysis of surface undulations of strained lattice-mismatched layers"Thin Solid Films. vol. 357. 57-60 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Y. Sase: "Molecular dynamics simulation of semiconductor surface steps"Preprints of the 1998 Annual Meeting of the Materials Science Society of Japan. 87-90 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Y. Obayashi: "Analysis of strain relaxation mechanisms in heteroepitaxial layers"Preprints of the 76th Fall Annual Meeting of the Japan Society of Mechanical Engineers (I). no. 998-3. 649-650 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Y. Kikuchi: "Molecular dynamics simulation of semiconductor surfaces"Preprints of the 76th Fall Annual Meeting of the Japan Society of Mechanical Engineers (I). no. 98-3. 651-652 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Y. Obayashi: "Anisotropic stability analysis of surface undulations of strained lattice-mismatched layers"Materials Research Society 1998 Fall Meeting Abstracts. 43 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] H. Sugii: "Atomistic simulation of quantum dots by the conjugate gradient method"Preprints of the 1999 Annual Meeting of the Materials Science Society of Japan. 85-88 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Y. Kikuchi: "Numerical analysis of strain distributions for quantum dots using empirical potentials"Preprints of the 1999 Annual Meeting of the Japan Society of Mechanical Engineers (II). no. 99-1. 35-36 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] H. Sugii: "Molecular dynamics study of strain effects on Raman frequencies of Ge/Si systems"Preprints of 49th Annual Meeting of the tokai Branch of the Japan Society of Mechanical Engineers. no. 003-1. 147-148 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Y. Obayashi: "Critical thickness of a hetero-epitaxial film on a twist-bonded compliant substrate"Preprints of 49th Annual Meeting of the tokai Branch of the Japan Society of Mechanical Engineers. no. 003-1. 327-328 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] M. Kobayashi: "Atomic simulation of strain distributions in quantum dots"Preprints of 49th Annual Meeting of the tokai Branch of the Japan Society of Mechanical Engineers. no. 003-1. 329-330 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] A. Honda: "Effect of surface steps on the strain relaxation mechanisms of thin sold films : Molecular dynamics simulation"Preprints of the 2000 Annual Meeting of the Materials Science Society of Japan. (in press). (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] Y.Obayashi: "Anisotropic stability analysis of surface undurations of strained lattice-mismatched layers"Thin Solid Films. 357. 57-60 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 杉井弘嗣: "共役勾配法による量子ドットの原子論的シミュレーション"日本材料科学会平成11年度学術講演大会講演予稿集. 85-88 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 菊地幸典: "経験的ポテンシャルを用いた量子ドットのひずみ分布の数値解析"日本機械学会1999年度年次大会講演論文集(II). 99-1. 35-36 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 杉井弘嗣: "Ge/Si系のラマン振動数に対するひずみ効果の分子動力学解析"日本機械学会東海支部第49期総会講演会. 003-1. 147-148 (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] 大林克至: "コンプライアント基板上のヘテロエピタキシャル層の臨界膜厚の解析"日本機械学会東海支部第49期総会講演会. 003-1. 327-328 (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] 小林幹宏: "原子シミュレーションによる量子ドットのひずみ分布の解析"日本機械学会東海支部第49期総会講演会. 003-1. 329-330 (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] Y.Obayashi: "Directional dependence of surface morphological stability of heteroepitaxial layers" Journal of Applied Physics. 84・6. 3141-3146 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 佐瀬尚孝: "半導体表面ステップの分子動力学シミュレーション" 日本材料科学会平成10年度学術講演大会講演予稿集. 87-90 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 大林克至: "ヘテロエピタキシャル層におけるひずみ緩和機構の解析" 日本機械学会第76期全国大会講演論文集(I). 98-3. 649-650 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 菊地幸典: "半導体表面の分子動力学シミュレーション" 日本機械学会第76期全国大会講演論文集(I). 98-3. 651-652 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Y.Obayashi: "Anisotropic stability analysis of surface undulations of strained lattice-mismatched layers" Materials Research Society 1998 Fall Meeting Abstracts. 43 (1998)

    • Related Report
      1998 Annual Research Report

URL: 

Published: 1998-04-01   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi