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DEVELOPMENT OF THE HIGH REPETITIVE IMPULSE VOLTAGE GENERATOR USING SEMICONDUCTOR SWITCHES

Research Project

Project/Area Number 10650270
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field 電力工学・電気機器工学
Research InstitutionSAITAMA UNIVERSITY

Principal Investigator

MAEYAMA Mitsuaki  SAITAMA UVIVERSITY FACULTY OF ENGINEERING, ASSOCIATE PROFESSOR, 工学部, 助教授 (00196875)

Co-Investigator(Kenkyū-buntansha) KOBAYASHI Shinichi  SAITAMA UNIVERSITY, FACULTY OF ENGINEERING, PROFESSOR, 工学部, 教授 (40008876)
Project Period (FY) 1998 – 1999
Project Status Completed (Fiscal Year 1999)
Budget Amount *help
¥2,600,000 (Direct Cost: ¥2,600,000)
Fiscal Year 1999: ¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 1998: ¥1,500,000 (Direct Cost: ¥1,500,000)
Keywordspulse power generator / high repetitiveness / impulse generator / static IG / semiconductor switch / L-C resonant charging / Marx generator / パルスパワー / 高繰返し動作 / サイリスタ / 高速充電 / Zルクス回路 / 高繰返し
Research Abstract

In this research, we have developed high repetitive impulse voltage generator using semiconductor switches(static IG). Obtained results are as followed :
・Proposal of a very high speed and efficient IG charging system.
Replacing charging resistances to diodes, we developed low impedance charging system where the resistance component of its impedance is zero in principle and a simple gate system, which enables successive trigger operations for second and above switches, can be applied.
Next, using this low impedance property, we adopted the L-C resonant charging method to this IG where we use IGBT switch as an injection switch of the charging system.
As a results, in the experiment of 5 stage static IG where C of each stage is 0.1μF and L=500μH, the high speed charging property(charging period 50μs) of our system can be demonstrated.
・Proposal of the improved successive gate circuit system.
The gate circuit for second and above thristors are composed of 1) voltage source charging section, 2) voltage transform section to generate trigger signal, and 3) output section supplying voltage-current pulse to thristers.
A voltage source of capacitor 0.1μF of each gate are charged simultaneously with each stage capacitor of IG through anode-cathode voltage of thristor. And, this gate are guaranteed to operate normally in any case of trigger controls
This gate circuit is triggered by the anode-cathode voltage increment of thrister. So, there is no need of additional trigger signal system to second and above thrister. Furthermore, in case of using high speed charging system mentioned above, we proposed a novel gate circuit system which make it easier to calibrate its parameters.
Using this high speed charging system and improved gate circuit, 4.5kHz repetitive operation (5 stage static IG), and output voltage of 11.8 times of charging DC voltage (20 stage static IG) are achieved experimentally.

Report

(3 results)
  • 1999 Annual Research Report   Final Research Report Summary
  • 1998 Annual Research Report
  • Research Products

    (24 results)

All Other

All Publications (24 results)

  • [Publications] 岡村一弘: "半導体スイッチング素を用いたマルクス回路の開発"電気学会論文誌A. 118A-11. 1318-1319 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 黒田智: "半導体化IGの高速充電に関する研究"平成10年電気学会全国大会講演論文集. 1. 34-34 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 岡村一弘: "半導体スイッチング素子を用いたパルスパワー電源の高繰り返し化に関する研究"平成11年電気学会全国大会講演論文集. 1. 188-188 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 黒田智: "高繰り返し運転可能な半導体化IGの開発"平成12年電気学会全国大会講演論文集. 1. 326-326 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K.Okamura: "Development of the High Repetitive Inpolse Votage Generator using Semiconductor Switches"12th IEEE Int.Pulse Power Conf.. II. 807-810 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] S.Kuroda: "A Study of Switching Properties of SI Thyristor for Using High Current Gate Circuit"12th IEEE Int.Pulse Power Conf.. II. 1195-1198 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K.Okamura, M.Maeyama: "Development of Marx Circuit using Semiconductor Switches"T,IEE Japan. 118-A(11). 1318-1319 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] S.Kuroda, K.Okamura, M.Maeyama: "A Study for High-Speed Charging of a static Impulse Generator"1998 National convention record I.E.E.Japan. 1. 34 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K.Okamura, S.Kuroda, M.Maeyame: "A Study for High Repetitive Pulse Power Generator using Semiconductor Switches"1999 National convention record I.E.E.Japan. 1. 188 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] S.Kuroda, M.Ezawa, M.Maeyama: "Development of High Repetitive Impulse Generator using Semiconductor Switches"2000 National convention record I.E.E.Japan. 1. 326 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K.Okamura, S.Kuroda and M.Maeyama: "Development of the High Repetitive Inpulse Voltage Generator using Semiconductor Switches"12th IEEE International Pulse Power Conf.. Vol. II. 807-810 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] S.Kuroka and M.Maeyama: "A Study of Switching Properties of SI Thyristor using High Current Gate Circuit."12th IEEE International Pulse Power Conf.. Vol. II. 1195-1198 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 岡村一弘: "半導体スイッチング素子を用いたパルスパワー電源の高繰り返し化に関する研究"平成11年電気学会全国大会講演論文集. 1. 188-188 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 黒田智: "SIサイリスタの高速スイッチングに関する研究"平成11年電気学会全国大会講演論文集. 1. 187-187 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] S. Kuroda: "A study of switching properties of SI Thyristor using high current gate circuit"Digest of Technical Papers, 12th IEEE Int. Pulsed Power Conf.. II. 1195-1198 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] K. Okamura: "Development of the high repetitive impulse voltage generator using semiconductor switches"Digest of Technical Papers, 12th IEEE Int. Pulsed Power Conf.. II. 807-810 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 黒田智: "高繰返し運転可能な半導体化IGの開発"平成12年電気学会全国大会. (発表予定). (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] 岡村 一弘: "半導体スイッチング素子を用いたマルクス回路の開発" 電気学会論文誌 A. 118A-11. 1318-1319 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 黒田 智: "半導体化IGの高速充電に関する研究" 平成10年電気学会全国大会講演論文集1. 34-34 (1989)

    • Related Report
      1998 Annual Research Report
  • [Publications] 菅原 秀和: "SIサイリスタの高速スイッチングに関する研究" 平成10年電気学会全国大会講演論文集1. 36-36 (1989)

    • Related Report
      1998 Annual Research Report
  • [Publications] 岡村 一弘: "半導体スイッチング素子を用いたパルスパワー電源の高繰り返し化に関する研究" 平成11年電気学会全国大会. 発表予定. (1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] 黒田 智: "SIサイリスタの高速スイッチングに関する研究" 平成11年電気学会全国大会. 発表予定. (1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] S.Kuroda: "A study of switing Properties・6SI Thyristor using high current gate current" 12th IEEE Int.Pulse Power Cnference. 発表予定. (1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] K.Okamura: "Development of the high repetitive impulse voltage generator using semiconductor switches" 12th IEEE Int.Pulse Power Conference. 発表予定. (1999)

    • Related Report
      1998 Annual Research Report

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Published: 1998-04-01   Modified: 2016-04-21  

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