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Realization of High-Reliable Thin Film Capacitor by Anodizing A1- Transition Metal Intermetallic Compounds

Research Project

Project/Area Number 10650299
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionKitami Institute of Technology

Principal Investigator

SASAKI Katsutaka  Faculty of Engineering Kitami Institute of Technology Prof., 工学部, 教授 (80091552)

Co-Investigator(Kenkyū-buntansha) YANAGISAWA Hideto  Faculty of Engineering Kitami Institute of Technology Res.Asso., 工学部, 助手 (70158020)
ABE Yoshio  Faculty of Engineering Kitami Institute of Technology Asso.Prof., 工学部, 助教授 (20261399)
Project Period (FY) 1998 – 2000
Project Status Completed (Fiscal Year 2000)
Budget Amount *help
¥1,300,000 (Direct Cost: ¥1,300,000)
Fiscal Year 2000: ¥600,000 (Direct Cost: ¥600,000)
Fiscal Year 1999: ¥700,000 (Direct Cost: ¥700,000)
Keywordshigh reliable capacitor / anodized film / Al_3Hf compound / Al_3Zr compound / Al_3Ta compound / heat-proof property / high permitivity / low loss property / 陽極酸化膜キャパシタ / 容量低減の抑制 / 漏れ電流特性 / 酸化膜厚の薄層化 / 周波数特性 / 低損失化 / 薄膜キャパシタ / アルミ-遷移金属の金属間化合物
Research Abstract

Generally, many stoichiometric intermetallic compounds exhibit high hardeness and high thermal stability at high temperatures. It is then expected that thin film capacitors with high heat-proof properties and low loss properties can be realized by anodizing stoichiometric and low-resistive intermetallic compounds composed of valve metals which are able to anodize. In addition, if intermetallic compounds which are composed of Al and Hf, Zr and Ta are anodized, we expect that high permitivity capacitor can be realized because the dielectric constans of Hf, Zr and Ta oxides are relatively large. Therefore, we prepared the intermetallic compound films of Al_3Hf, Al_3Zr and Al_3Ta by co-sputtering method, and examined the capacitor properties, leakage current and the heat-proof properties of these anodized capacitors. Following results were obtained.
(1) The heat-proof properties of these anodized capacitors were superior to that of Ta anodized capacitor which has been widely used to date. (2) The dielectric constant of Al_3Ta capacitor among these capacitors was the highest. (3)The best heat-proof property could be obtained by using Al_3Hf capacitor, while the initial capacitor properties of Al_3Zr was the best. (4) The difference of the polarity on the leakage current was not recognized in these three anodized capacitors.
Therefore, it is concluded that the thin film capacitors prepared by anodizing Al-transition metal intermetallic compounds are one of the most promising mothods to realize high reliable thin film capacitors.

Report

(4 results)
  • 2000 Annual Research Report   Final Research Report Summary
  • 1999 Annual Research Report
  • 1998 Annual Research Report
  • Research Products

    (18 results)

All Other

All Publications (18 results)

  • [Publications] 尾関,山根,佐々木 他: "Al_3Hf金属間化合物の陽極酸化膜による高耐熱,高信頼性薄膜キャパシタの実現"電子情報通信学会論文誌. J81-C-II. 619-627 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 佐々木,尾関: "バルブメタルの金属間化合物のアノード酸化とコンデンサへの応用"表面技術. 50. 16-20 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 稲田,山根,佐々木 他: "Al_3Zr金属間化合物の陽極酸化とそれを応用した高信頼性薄膜キャパシタの作製"電子情報通信学会論文誌. J82-C-II. 543-550 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 尾関,山根,佐々木 他: "低化成電圧で作製したAl_3Hf陽極酸化膜キャパシタの熱劣化機構"電子情報通信学会論文誌. J83-C. 663-665 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 田邊,山根,佐々木 等: "Ta窒化物のTa-Al化合物への代替による薄膜キャパシタの容量低減の抑制効果"電子情報通信学会技術研究報告. CPM2000-71. 7-12 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 田邊,山根,佐々木 他: "Al_3Ta陽極酸化膜キャパシタの作製とその耐熱性"電子情報通信学会論文誌. J83-C. 972-974 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] M.Ozeki, M.Yamane, K.Sasaki, Y.Abe, H.Yanagisawa and M.Kawamura: "A Study on the Thin Film Capacitor with High Heat-Proof Property and High Reliability by Using Anodized Film of Al_3Hf Intermetallic Compound"Trans.IEICE Japan. vol. J81-C-II, No.7. 619-627 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.Sasaki and M.Ozeki :: "Anodic Oxidation of Intermetallic Compound of Valve Metals and Its Application to Capacitor Devices"Surface Technolgy. vo1.50, No.1. 16-20 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] H.Inada, M.Yamane, K.Sasaki, Y.Abe, M.Kawamura and H.Yanagisawa: "Anodization of Al_3Zr Intermetallic Compound Film and Its Application to the Preparation of Thin Film Capacitor with High Reliability"Trans.IEICE Japan. vol.J82-C-II, No.10. 543-550 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] M.Ozeki, M.Yamane, K.Sasaki, Y.Abe, H.Yanagisawa and M.Kawamura: "Thermal Degradation Mechanism of Al_3Hf Anodized Thin Film Capacitor Prepared at Low Anodization Voltage"Trans.IEICE Japan. vol.J83-C, No.7. 663-665 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] A.Tanabe, M.Yamane, K.Sasaki and Y.Abe: "Suppression Effect of the Capacitance Reduction of Thin Film Capacitor by Substituting Ta Nitride with Ta-Al Compound"Technical Report IEICE Japan. CPM2000-71. 7-12 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] A.Tanabe, M.Yamane, K.Sasaki and Y.Abe: "Preparation of Al_3Ta Anodized Thin Film Capacitor and Its Heat-Proof Property"Trans.IEICE Japan. vol.J83-C, No.10. 972-974 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 尾関,山根,佐々木 等: "低化成電圧で作製したAl_3Hf陽極酸化膜キャパシタの熱劣化機構"電子情報通信学会論文誌. J83-C,7. 663-665 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 田邊,山根,佐々木 等: "Al_3Ta陽極酸化膜キャパシタの作製とその耐熱性"電子情報通信学会論文誌. J83-C,10. 972-974 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 田邊,山根,佐々木 等: "Ta窒化物のTa-Al化合物への代替による薄膜キャパシタの容量低減の抑制効果"電子情報通信学会技術研究報告. CPM2000-71. 7-12 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 稲田,山根,佐々木等: "Al_3Zr金属間化合物の陽極酸化とそれを応用した高信頼性薄膜キャパシタの作製"電子情報通信学会論文誌(C-II). J82-C-II,,10. 543-550 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 尾関、山根、佐々木 他: "Al_3Hf金属間化合物の陽極酸化膜による高耐熱、高信頼性薄膜キャパシタの検討" 電子情報通信学会論文誌. J80-C-II,7. 619-627 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 佐々木克孝、尾関雅彦: "バルブメタルの金属間化合物のアノード酸化とコンデンサへの応用" 表面技術. 50,1. 16-20 (1999)

    • Related Report
      1998 Annual Research Report

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Published: 1999-04-01   Modified: 2016-04-21  

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