Preparation of Bi-Sb semiconductor alloys by electro-deposition and its thermo-electric properties
| Project/Area Number |
10650306
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Nagoya Institute of Technology |
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Principal Investigator |
MASUI Kanji Electrics and computer engineering, Electric Device devision, 工学部・電気情報工学科, 教授 (10024358)
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| Project Period (FY) |
1998 – 1999
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| Project Status |
Completed (Fiscal Year 1999)
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| Budget Amount *help |
¥1,400,000 (Direct Cost: ¥1,400,000)
Fiscal Year 1999: ¥200,000 (Direct Cost: ¥200,000)
Fiscal Year 1998: ¥1,200,000 (Direct Cost: ¥1,200,000)
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| Keywords | electro-deposition / Bi-Sb / thermo-electric semiconductor / devise of thermo electricity |
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| Research Abstract |
Object 1 ; (1998) Electrochemical discussion of the condition that make electro-deposited Bi-Sb alloys using potensiostat. In this experiments, the possibility of alloy-deposition of Bi-Sb binary system, and the adequate composition of the bath were determined under strong hydrochloride acid condition.
(1) bath temperature ; 40-50℃ was best.
(2) pH of the bath ; the best of the range of the pH was -2〜0.
(3) bath composition ; HC1 (100-300ml/l), BiClィイD23ィエD2 (80-200g/l), SbClィイD23ィエD2 (1-80g/l) were the best composition range to form Bi-Sb alloy deposits.
(4) Current density of electro-deposition ; 1〜3A/dmィイD12ィエD1 were most suitable range to form the good crystal and well big size.
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Report
(3 results)
Research Products
(12 results)
