| Project/Area Number |
10650328
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | Muroran Institute of Technology |
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Principal Investigator |
NOMURA Shigeru Muroran Institute of Technology, Faculty of Engineering., Professor, 工学部, 教授 (10002859)
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| Co-Investigator(Kenkyū-buntansha) |
FUKUDA Hisashi Muroran Institute of Technology, Faculty of Engineering, Associate Professor, 工学部, 助教授 (10261380)
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| Project Period (FY) |
1998 – 1999
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| Project Status |
Completed (Fiscal Year 1999)
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| Budget Amount *help |
¥3,500,000 (Direct Cost: ¥3,500,000)
Fiscal Year 1999: ¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 1998: ¥2,000,000 (Direct Cost: ¥2,000,000)
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| Keywords | ULTRATHIN SILICON OXYNITRIDE FILM / RAPID THERMAL PROCESSING / SILICON TECHNOLOGY / DEVICE PROCESS / NITROUS OXIDE GAS |
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| Research Abstract |
The growth kinetics of ultrathin SiOィイD22ィエD2 films on silicon in a nitrous oxide (NィイD22ィエD20) ambient has been investigated as a function of oxidation temperature and time. The results show that the overall growth follows the linear-parabolic law proposed by Deal and Grove. The chemical etching profiles of these films indicate that the chemical etching rate near the oxinitride/silicon interface is much smaller than that at bulk layer. This means that the nitrogen-rich layer is present near the oxynitride/silicon interface. The data analysis indicates that although the oxidation proceeds by surface-limited reaction in the initial stage, it rapidly changes into a diffusion-controlled reaction. This behavior is evidenced from the fact that the reaction of the NィイD22ィエD2O molecules with the silicon surface produces an interfacial nitrogen-rich layer, which acts as a barrier to oxidant passing through the SiOィイD22ィエD2/Si interface. From the Arrhenius equation for NィイD22ィエD20 oxidation, the activation energies for the linear rate constant and for the parabolic rate constant are determined to be 1.5 and 23.3 eV, respectively.
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