| Project/Area Number |
10650341
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | Kokushikan University |
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Principal Investigator |
TAKETOSHI Kazuhisa Kokushikan University, Electrical Professor, 電気電子工学科, 教授 (80255637)
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| Project Period (FY) |
1998 – 2001
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| Project Status |
Completed (Fiscal Year 2001)
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| Budget Amount *help |
¥3,300,000 (Direct Cost: ¥3,300,000)
Fiscal Year 2001: ¥600,000 (Direct Cost: ¥600,000)
Fiscal Year 2000: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 1999: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 1998: ¥1,200,000 (Direct Cost: ¥1,200,000)
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| Keywords | ZnCdTe / EB-gain / Excess noise factor / EB利得 / 過剰雑音 / EB-利得 / ED-AMI / 電子増倍率 / S / N / 解像度 / 撮像評価実験 / 増倍利得 / 電子ミクロホトメトリ / 新構造 / 画像特性 / 寿命 / ランダムチェイン / CdTe,GaAs / EBIC動作 / 利得 |
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| Research Abstract |
We studied characteristics of electron bombaraded(EB)gain, excess noise factor, resolution, optimum thickness for EB-AMI. ZnCdTe sensor layer is overlaid on AMI. EB-gain is 1500 at 10 kV. Resolution is excellent since there is no connecting fiber. Random noise, white spots, lag and sticking cannot be detectable. Fatigue of running of 5000hr is excellent, is under detection although that of a-Si sensor is strong. The threshold voltage of 2kV is explained as penetration loss of Al, Six_2Nix_2 Optimal sensor thickness is 0.83 μm. Lateral expansion of electron excited in sensor is 0.2μm. theoretical excess noise factor is 1.2 and agrees with observed values.
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