HIGH PRECISION-PLANARIZATION WITH CHEMICAL-MECHANICAL POLISHING FOR LARGE DIAMETER SEMICONDUCTOR SUBSTRATE
| Project/Area Number |
10650706
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Material processing/treatments
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| Research Institution | KUMAMOTO UNIVERSITY |
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Principal Investigator |
JUNJI Watanabe KUMAMOTO UNIVERSITY GRADUATE SCHOOL OF SCIENCE AND TECHNOLOGY PROFESSOR, 大学院・自然科学研究科, 教授 (40281076)
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| Co-Investigator(Kenkyū-buntansha) |
TOUGE Mutumi KUMAMOTO UNIVERSITY FACULTY OF ENGINEERING ASSISTANT PROFESSOR, 工学部, 助教授 (00107731)
INAMURA Toyoshiroh NAGOYA INSTITUTE OF TECHNOLOGY PROFESSOR, 教授 (60107539)
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| Project Period (FY) |
1998 – 2000
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| Project Status |
Completed (Fiscal Year 2000)
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| Budget Amount *help |
¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2000: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 1999: ¥2,500,000 (Direct Cost: ¥2,500,000)
Fiscal Year 1998: ¥400,000 (Direct Cost: ¥400,000)
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| Keywords | SEMICONDUCTOR SUBSTRATE / VERY LARGE SCALE INTEGRATED SURFACE / PLANARIZATION POLISHING / CHEMICAL MECHANICAL POLISHING / FINITE ELEMENT METHOD / COPPER METAL LINE / THIN-SURFACE-GRINDING / LARGE DIAMETER WAFER / SG砥石 / 加工ひずみエネルギー / シート砥石 / 研磨パッド / 研削 |
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| Research Abstract |
THE RESEARCH TARGET IS TO DEVELOP THE NEW CHEMICAL MECHANICAL PLANARIZATION TECHNOLOGY AND CMP-MACHINE.THE RSULTS OBTAINED FOR THE TERM OF PROJECT ARE AS FOLLOWS :
1) THE DEFORMATION BEHAVIOR OF THE POLISHING PAD WHICH IS COMPOSED OF TWO DIFFERENT MATERIAL LAYERS WAS SIMULATED WITH FINITE-ELEMENT-METHOD DURING POLISHING.IT WAS FOUND THAT FRICTIONAL FORCE DURING POLISHING HAS LITTLE EFFECT FOR PAD DEFORMATION DEGREE.
2) THE NOVEL PROCESS USING PRE-THIN-SURFACE GRINDING AND CMP FOR HIGH EFFICIENCY PLANARIZATION WAS PROPOSED.A PATTERNED FILM SURFACE WAS GROUND OR SCRATCHED WITH A FINE GRAIN DIAMOND DISK WHEEL AND THE THIN DIAMOND CUP WHEEL USING THE SPECIFIC GRINDING MACHINE DESIGNED FOR THIS PURPOSE.THE FILM IN WHICH WAS CHEMICALLY ACTIVATED BY THE PRE-THIN-SURFACE GRINDING WAS SELECTIVLY POLISHED BY FOLLOWING CONVENTIONAL CMP.
3) THE SMALL TYPE SPECIFIC GRINDING MACHINE WAS DESIGNED AND TRIALMADE.SINCE THE SPINDLE HEAD OF THAT GRINDING MACHINE WAS FIXED ON THREE AXIS MOVABLE STAGE, IT IS ABLE TO GRIND LARGE DIAMETER WAFER BY MEANS OF SCANNING THE SMALL WHEEL FOR WAFER SURFACE.
4) THE COPPER METAL BLANKET WAFER WAS GROUNG WITH THIN-SURFACE GRINDING.IT IS FOUND THAT THE NEW CMP TECHNOLOGY IS AVAILABLE FOR THE LARGE WAFER WITH METAL LINE PATTERNS.
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Report
(4 results)
Research Products
(19 results)
