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HIGH PRECISION-PLANARIZATION WITH CHEMICAL-MECHANICAL POLISHING FOR LARGE DIAMETER SEMICONDUCTOR SUBSTRATE

Research Project

Project/Area Number 10650706
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Material processing/treatments
Research InstitutionKUMAMOTO UNIVERSITY

Principal Investigator

JUNJI Watanabe  KUMAMOTO UNIVERSITY GRADUATE SCHOOL OF SCIENCE AND TECHNOLOGY PROFESSOR, 大学院・自然科学研究科, 教授 (40281076)

Co-Investigator(Kenkyū-buntansha) TOUGE Mutumi  KUMAMOTO UNIVERSITY FACULTY OF ENGINEERING ASSISTANT PROFESSOR, 工学部, 助教授 (00107731)
INAMURA Toyoshiroh  NAGOYA INSTITUTE OF TECHNOLOGY PROFESSOR, 教授 (60107539)
Project Period (FY) 1998 – 2000
Project Status Completed (Fiscal Year 2000)
Budget Amount *help
¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2000: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 1999: ¥2,500,000 (Direct Cost: ¥2,500,000)
Fiscal Year 1998: ¥400,000 (Direct Cost: ¥400,000)
KeywordsSEMICONDUCTOR SUBSTRATE / VERY LARGE SCALE INTEGRATED SURFACE / PLANARIZATION POLISHING / CHEMICAL MECHANICAL POLISHING / FINITE ELEMENT METHOD / COPPER METAL LINE / THIN-SURFACE-GRINDING / LARGE DIAMETER WAFER / SG砥石 / 加工ひずみエネルギー / シート砥石 / 研磨パッド / 研削
Research Abstract

THE RESEARCH TARGET IS TO DEVELOP THE NEW CHEMICAL MECHANICAL PLANARIZATION TECHNOLOGY AND CMP-MACHINE.THE RSULTS OBTAINED FOR THE TERM OF PROJECT ARE AS FOLLOWS :
1) THE DEFORMATION BEHAVIOR OF THE POLISHING PAD WHICH IS COMPOSED OF TWO DIFFERENT MATERIAL LAYERS WAS SIMULATED WITH FINITE-ELEMENT-METHOD DURING POLISHING.IT WAS FOUND THAT FRICTIONAL FORCE DURING POLISHING HAS LITTLE EFFECT FOR PAD DEFORMATION DEGREE.
2) THE NOVEL PROCESS USING PRE-THIN-SURFACE GRINDING AND CMP FOR HIGH EFFICIENCY PLANARIZATION WAS PROPOSED.A PATTERNED FILM SURFACE WAS GROUND OR SCRATCHED WITH A FINE GRAIN DIAMOND DISK WHEEL AND THE THIN DIAMOND CUP WHEEL USING THE SPECIFIC GRINDING MACHINE DESIGNED FOR THIS PURPOSE.THE FILM IN WHICH WAS CHEMICALLY ACTIVATED BY THE PRE-THIN-SURFACE GRINDING WAS SELECTIVLY POLISHED BY FOLLOWING CONVENTIONAL CMP.
3) THE SMALL TYPE SPECIFIC GRINDING MACHINE WAS DESIGNED AND TRIALMADE.SINCE THE SPINDLE HEAD OF THAT GRINDING MACHINE WAS FIXED ON THREE AXIS MOVABLE STAGE, IT IS ABLE TO GRIND LARGE DIAMETER WAFER BY MEANS OF SCANNING THE SMALL WHEEL FOR WAFER SURFACE.
4) THE COPPER METAL BLANKET WAFER WAS GROUNG WITH THIN-SURFACE GRINDING.IT IS FOUND THAT THE NEW CMP TECHNOLOGY IS AVAILABLE FOR THE LARGE WAFER WITH METAL LINE PATTERNS.

Report

(4 results)
  • 2000 Annual Research Report   Final Research Report Summary
  • 1999 Annual Research Report
  • 1998 Annual Research Report
  • Research Products

    (19 results)

All Other

All Publications (19 results)

  • [Publications] F.Katsuki,K.Kamei,A.Saguchi,W.Takahashi and J.Watanabe: "AFM Studies on the Difference in Wear Behavior Between Si and SiO2 in KOH Solution"J.Electrochem.Soc.. Vol.147No.8. 2328-2331 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 佐口明彦,小川正裕,高橋渉,渡邉純二: "CMP特性に及ぼす弾性アシストパッド硬度の影響"砥粒加工学会誌. 44巻・10号. 455-460 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] J.Watanabe,R.Etoh,M.Hirano: "A Novel Chemical-Mechanical Planarization Technology Using Pre-Thin-Surface Grinding in ULSI Manufacturing Process"Key Engineering Materials. Vol.196. 25-30 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 渡邉純二 他4名: "平坦化CMPにおけるパッド開発と特性"2000年度精密工学会春季大会学術講演会講演論文集. 387 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 渡邉純二 他3名: "クラスター型アルミナ砥粒(SG砥粒)によるSiウェハの精密研削加工"2000年度精密工学会春季大会学術講演会講演論文集. 391 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 渡邉純二 他4名: "LSIにおける酸化膜平坦化技術の研究"2000年度精密工学会中国・四国・九州支部合同大会学術講演会講演論文集. 65 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] J.WATANABE ET.AL.: "A PROPOSAL OF THE NEW POLISHING PAD STRUCTURE FOR PLANARIZATION POLISHING"JOURNAL OF THE JAPAN SOCIETY OF ADVANCED PRODUCTION TECHNOLOGY. VOL.18-NO.1. 13-19 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] J.WATANABE ET.AL.: "REMOVAL RATE ENHANCING EFFECT OF PRE-THIN-SURFACE GRINDING ON CHEMICAL-MECHANICAL PLANARIZATION POLISHING IN VLSI PROCESS"PROCEEDINGS OF THE THIRD INTERNATION AL CONFERENCE ON ABRASIVE TECHNOLOGY. 187-193 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] F.KATSUKI, J.WATANABE ET.AL.: "AFM STUDIES ON THE DIFFERENCE IN WEAR BEHAVIOR BETWEEN SI AND SIO2 IN KOH SOLUTION"J.ELECTROCHEM.SOC.. VOL.147-NO.8. 2328-2331 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] A.SAGUCHI, J.WATANABE ET.AL.: "THE EFFECT OF ASSIST PAD HARDNESS ON CMP CHARACTERISTICS"JOURNAL OF THE JAPAN SOCIETY OF ABRASIVE MAHINING TECHNOLOGY. VOL.44-NO.10. 455-460 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] J.WATANABE ET.AL.: "A NOVEL CHEMICAL-MECHANICAL PLANARIZATION TECHNOLOGY USING PRE-THIN-SURFACE GRINDING IN ULSI MANUFACTURING PROCESS"KEY ENGINEERING MATERIALS. VOL.196. 25-30 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] F.Katsuki,K.Kamei,A.Saguchi,W.Takahashi and J.Watanabe: "AFM Studies on the Difference in Wear Behavior Between Si and SiO2 in KOH Solution"J.Electrochem.Soc.. Vol.147No.8. 2328-2331 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 佐口明彦,小川正裕,高橋渉,渡邉純二: "CMP特性に及ぼす弾性アシストパッド硬度の影響"砥粒加工学会誌. 44巻・10号. 455-460 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] J.Watanabe,R.Etoh,M.Hirano: "A Novel Chemical-Mechanical Planarization Technology Using Pre-Thin-Surface Grinding in ULSI Manufacturing Process"Key Engineering Materials. Vol.196. 25-30 (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] 渡邉純二 他4名: "平坦化CMPにおけるパッド開発と特性"2000年度精密工学会春季大会学術講演会講演論文集. 387 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 渡邉純二 他3名: "クラスター型アルミナ砥粒(SG砥粒)によるSiウェハの精密研削加工"2000年度精密工学会春季大会学術講演会講演論文集. 391 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 渡邉純二 他4名: "LSIにおける酸化膜平坦化技術の研究"2000年度精密工学会中国・四国・九州支部合同大会学術講演会講演論文集. 65 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 渡邉 純二他: "平坦化研磨技術における基本加工特性と新しいパッド組織の提案"先端加工. 18巻1号. 187-193 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 渡邉 純二他: "Removal Rate Enhancing Effect of Pre-Thin-Surface Grinding on Chemical-Mechanical Planarization Polishing in VLSI Process"Proc.of the Third International Conference on Abrasive Technology. 13-19 (1999)

    • Related Report
      1999 Annual Research Report

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Published: 1998-04-01   Modified: 2016-04-21  

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