SiGe／Si超格子の界面ラフネスと歪み緩和

• Project/Area Number: 10750225
• Research Category: Grant-in-Aid for Encouragement of Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: Electronic materials/Electric materials
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: 坂田 修身 東工大, 応用セラミックス研究所, 助手 (40215629)
• Project Period (FY): 1998
• Project Status: Completed (Fiscal Year 1998)
• Budget Amount: ¥900,000 (Direct Cost: ¥900,000); Fiscal Year 1998: ¥900,000 (Direct Cost: ¥900,000)