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3次元量子ドット超格子の作製評価と高効率太陽電池応用

Research Project

Project/Area Number 10J02281
Research Category

Grant-in-Aid for JSPS Fellows

Allocation TypeSingle-year Grants
Section国内
Research Field Applied materials science/Crystal engineering
Research InstitutionUniversity of Tsukuba

Principal Investigator

庄司 靖  筑波大学, 大学院・数理物質科学研究科, 特別研究員(DC1)

Project Period (FY) 2010 – 2012
Project Status Completed (Fiscal Year 2012)
Budget Amount *help
¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 2012: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 2011: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 2010: ¥700,000 (Direct Cost: ¥700,000)
Keywords量子ドット / 太陽電池 / 中間バンド / 分子線エピタキシー / 結晶成長 / MBE
Research Abstract

本研究では、半導体量子ドットを用いて中間バンドを形成することで太陽電池の高効率化を図ることを目的としている。本年度は、長いキャリア寿命を有するInGaAs/GaAsSbタイプII量子ドット超格子セルをGaAs(311)B基板上に作製し評価した。その結果、タイプII構造の形成により、発光再結合損失が減少し、さらに中間バンドを介した2段階の光吸収レートが増大することを見出した。また、セルの特性としては非集光下において、J_<sc>=28.1mA/cm^2,V_<oc>=0.824V,FF=0.747が得られ、変換効率は17.3%を達成した。
次に、量子ドット内のキャリアが熱励起によって脱出する過程を抑制して2段階光吸収レートをさらに増大させるために、量子ドット超格子セルの母体材料としてバンドギャップエネルギーの大きいAIGaAsを用いることを検討した。本試料においては、価電子帯から伝導帯に励起された電子が量子ドット内に閉じ込められた後、赤外光を利用して再び伝導帯に励起される2段階光吸収過程の量子効率を最大で約4%まで向上させることに成功した。これは、母体材料のバンドギャップエネルギーを大きくしたことで、量子ドットの内のキャリアの熱励起が抑制され、光学遷移が向上したと考えられる。このとき、2段階光吸収による生成電流量はAM1.5太陽光スペクトル照射時における短絡電流値の12.6%を占めており、非常に高い値を得た。
上記の結果は、量子ドットから伝導帯への光学遷移が十分高いことを示唆しており、中間バンド型太陽電池において非常に有用な研究成果と考える。

Report

(3 results)
  • 2012 Annual Research Report
  • 2011 Annual Research Report
  • 2010 Annual Research Report
  • Research Products

    (22 results)

All 2013 2012 2011 2010 Other

All Journal Article (8 results) (of which Peer Reviewed: 8 results) Presentation (13 results) Book (1 results)

  • [Journal Article] Self-organized InGaAs/GaAs quantum dot arrays for use in high-efficiency intermediate-band solar cells2013

    • Author(s)
      Yasushi Shoji. Katsuhiro Akimoto, and Yoshitaka Okada
    • Journal Title

      Journal of Physics D: Applied Physics

      Volume: 46 Issue: 2 Pages: 24002-24002

    • DOI

      10.1088/0022-3727/46/2/024002

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Optical properties of multi-stacked InGaAs/GaNAs quantum dot solar cell fabricated on GaAs (311)B substrate2012

    • Author(s)
      Yasushi Shoji. Katsuhiro Akimoto, and Yoshitaka Okada
    • Journal Title

      Journal of Applied Physics

      Volume: 112 Issue: 6 Pages: 64314-64314

    • DOI

      10.1063/1.4752733

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effect of spacer layer thickness on multi-stacked InGaAs quantum dots grown on GaAs (311) B substrate for application to intermediate band solar cells2012

    • Author(s)
      Yasushi Shoji, Kohei Narahara, Hideharu Tanaka, Takashi Kita, Katsuhiro Akimoto, Yoshitaka Okada
    • Journal Title

      Journal of Applied Physics

      Volume: 111 Issue: 7 Pages: 74305-74305

    • DOI

      10.1063/1.3699215

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell2011

    • Author(s)
      Yoshitaka Okada, Takayuki Morioka, Katsuhisa Yoshida, Ryuji Oshima, Yasushi Shoji, Tomoya Inoue, Takashi Kita
    • Journal Title

      Journal of Applied Physics

      Volume: 109

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Multi-staqcked InGaAs/GaNAs quantum dot solar cell fabricated on GaAs (311)B substrate2010

    • Author(s)
      Yasushi Shoji, Ryuji Oshima, Ayami Takata, Takayuki Morioka, Yoshitaka Okada
    • Journal Title

      Proceeding of IEEE Photovoltaic Specialists Conference

      Volume: 35 Pages: 1859-1862

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Multi-staqcked InAs/GaNAs quantum dots with direct Si doping for use in intermediate-band solar cells" Proceeding of 35th IEEE Photovoltaic Specialists Conference2010

    • Author(s)
      Takayuki Morioka, Ryuji Oshima, Ayami Takata, Yasushi Shoji, Tomoya Inoue, Takashi Kita, Yoshitaka Okada
    • Journal Title

      Proceeding of IEEE Photovoltaic Specialists Conference

      Volume: 35 Pages: 1834-1837

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication of 100 layer-stacked InAs/GaNAs strain-compensated quantum dots on GaAs(001) for application to intermediate band solar cell2010

    • Author(s)
      Ayami Takata, Ryuji Oshima, Yasushi Shoji, Kouichi Akahane, Yoshitaka Okada
    • Journal Title

      Proceeding of IEEE Photovoltaic Specialists Conference

      Volume: 35 Pages: 1877-1880

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Evaluation of multi-stacked InAs/GaNAs self-assembled quantum dots on GaAs (001) grown using different As species

    • Author(s)
      Ayami Takata, Ryuji Oshima, Yasushi Shoji, Kouichi Akahane, Yoshitaka Okada
    • Journal Title

      Journal of Crystal Growth

      Volume: 印刷中

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Presentation] 高エネルギーギャップ母体材料を用いたInGaAs量子ドット太陽電池2013

    • Author(s)
      庄司靖, 秋本克洋, 岡田至崇
    • Organizer
      第60回応用物理学会学術講演会
    • Place of Presentation
      神奈川(神奈川工科大学)
    • Year and Date
      2013-03-28
    • Related Report
      2012 Annual Research Report
  • [Presentation] InAs quantum dots grown on GaAsSb layer on different substrate orientation2012

    • Author(s)
      Yasushi Shoji, Katsuhiro Akimoto and Yoshitaka Okada
    • Organizer
      The 17th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      Nara (Nara Prefectural New Public Hall)
    • Year and Date
      2012-09-25
    • Related Report
      2012 Annual Research Report
  • [Presentation] GaAs(311)B基板上InGaAs/GaAsSb量子ドット太陽電池2012

    • Author(s)
      庄司靖, 秋本克洋, 岡田至崇
    • Organizer
      第73回応用物理学関係連合講演会
    • Place of Presentation
      愛媛(松山大学)
    • Year and Date
      2012-09-11
    • Related Report
      2012 Annual Research Report
  • [Presentation] InGaAs/GaAsSb Type-II quantum dots for intermediate-band solar cell2012

    • Author(s)
      Yasushi Shoji. Katsuhiro Akimoto, and Yoshitaka Okada
    • Organizer
      The 38th IEEE Photovoltaic Specialists Conference
    • Place of Presentation
      Austin (Austin convention center)
    • Year and Date
      2012-06-03
    • Related Report
      2012 Annual Research Report
  • [Presentation] InGaAs量子ドット太陽電池における2段階吸収過程のバイアス依存性2012

    • Author(s)
      庄司靖, 秋本克洋, 岡田至崇
    • Organizer
      第9回次世代の太陽光発電システムシンポジウム
    • Place of Presentation
      京都(京都テルサ)
    • Year and Date
      2012-05-31
    • Related Report
      2012 Annual Research Report
  • [Presentation] 中間バンド型量子ドット太陽電池における2段階光吸収過程2012

    • Author(s)
      庄司靖, 秋本克洋, 岡田至崇
    • Organizer
      2012年春季第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-18
    • Related Report
      2011 Annual Research Report
  • [Presentation] Multi-stacked quantum dots for application to high-efficiency intermediate band solar cells2012

    • Author(s)
      Yasushi Shoji, Kohei Narahara, Tomah Sogabe, Takuya Hoshii, Yoshitaka Okada
    • Organizer
      International Symposium on Innovative Solar Cells 2012
    • Place of Presentation
      University of Tokyo, Tokyo
    • Year and Date
      2012-03-05
    • Related Report
      2011 Annual Research Report
  • [Presentation] EFFECT OF SPACER LAYER THICKNESS ON MULTI-STACK InGaAs QUAN TUM DOTS GROWN ON GaAs (311) B SUBSTRATE FOR USE IN INTERMEDIATE BAND SOLAR CELLS2011

    • Author(s)
      Yasushi Shoji, Kohei Narahara, Hideharu Tanaka, Takashi Kita, Katsuhrio Akimoto, Yoshitaka Okada
    • Organizer
      The 21st International Photovoltaic Science and Engineering Conference
    • Place of Presentation
      Hilton Fukuoka Sea Hawk, Fukuoka
    • Year and Date
      2011-11-29
    • Related Report
      2011 Annual Research Report
  • [Presentation] Current Enhancement in Direct Si-Doped InAs/GaNAs Strain-Compensated Quantum Dot Solar Cells2011

    • Author(s)
      Takayuki Morioka, Yasushi Shoji, Yoshitaka Okada
    • Organizer
      The 37th IEEE Photovoltaic Specialists Conference
    • Place of Presentation
      Washington State Convention Center, Seattle, USA
    • Year and Date
      2011-06-24
    • Related Report
      2011 Annual Research Report
  • [Presentation] Control of size and density of multi-stacked self-organized InGaAs quantum dots grown on GaAs (311)B substrate2010

    • Author(s)
      Yasushi Shoji, Takayuki Morioka, Yoshitaka Okada
    • Organizer
      Workshop on Information, Nano and Photonics Technology 2010
    • Place of Presentation
      Kobe University
    • Year and Date
      2010-12-02
    • Related Report
      2010 Annual Research Report
  • [Presentation] Multi-stacked quantum dots for application to intermediate band solar cells2010

    • Author(s)
      Yasushi Shoji, Ryuji Oshima, Ayami Takata, Takayuki Morioka, Yoshitaka Okada
    • Organizer
      3rd International symposium on Innovative solar cells
    • Place of Presentation
      Tokyo Tech Front
    • Year and Date
      2010-10-07
    • Related Report
      2010 Annual Research Report
  • [Presentation] 高指数面基板上InGaAs量子ドット太陽電池の作製評価2010

    • Author(s)
      庄司靖、大島隆治、高田彩未、森岡孝之、秋本克洋、岡田至崇
    • Organizer
      第7回次世代の太陽光発電システムシンポジウム
    • Place of Presentation
      北九州国際会議場
    • Year and Date
      2010-07-08
    • Related Report
      2010 Annual Research Report
  • [Presentation] InGaAs/GaNAs quantum dot solar cell fabricated on GaAs(311)B substrate2010

    • Author(s)
      Multi-staqcked Yasushi Shoji, Ryuji Oshima, Ayami Takata, Takayuki Morioka, Yoshitaka Okada
    • Organizer
      35th IEEE Photovoltaic Specialists Conference
    • Place of Presentation
      Hawaii Convention center USA
    • Year and Date
      2010-06-22
    • Related Report
      2010 Annual Research Report
  • [Book] Advanced Solar Cell Materials, Technology, Modeling, and Simulation (Chapter 10)2012

    • Author(s)
      Yoshitaka Okada, Katsuhisa Yoshida, and Yasushi Shoji
    • Total Pages
      24
    • Publisher
      IGI Global
    • Related Report
      2012 Annual Research Report

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Published: 2010-12-03   Modified: 2024-03-26  

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