人工IV族半導体の物性制御と超高速光・電子デバイスへの応用

• Project/Area Number: 11232101
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: Musashi Institute of Technology (2004); The University of Tokyo (1999-2003)
• Principal Investigator: 白木 靖寛 武蔵工業大学, 総合研究所, 教授 (00206286)
• Co-Investigator(Kenkyū-buntansha): 安田 幸夫 高知工科大学, 総合研究所, 教授 (60126951) ; 室田 淳一 東北大学, 電気通信研究所, 教授 (70182144) ; 坂本 統徳 長崎県政策調製局, 理事 ; 荒井 英輔 名古屋工業大学, 工学部, 教授 (90283473) ; 伊澤 達夫 NTTエレクトロニクス(株), 取締役社長(研究職)
• Project Period (FY): 1999 – 2004
• Project Status: Completed (Fiscal Year 2004)
• Budget Amount: ¥13,900,000 (Direct Cost: ¥13,900,000); Fiscal Year 2004: ¥1,500,000 (Direct Cost: ¥1,500,000); Fiscal Year 2003: ¥2,600,000 (Direct Cost: ¥2,600,000); Fiscal Year 2002: ¥3,000,000 (Direct Cost: ¥3,000,000); Fiscal Year 2001: ¥3,900,000 (Direct Cost: ¥3,900,000); Fiscal Year 2000: ¥2,000,000 (Direct Cost: ¥2,000,000); Fiscal Year 1999: ¥900,000 (Direct Cost: ¥900,000)
• Keywords: 人工IV族半導体 / 光エレクトロニクス / 電子物性 / 光物性 / シリコンゲルマニウム / 極微細構造 / シリコン / 集積回路 / 高性能トランジスタ / 原子精度要素プロセス / 超高速光・電子デバイス

Research Abstract

平成16年度を本研究では、平成11年度〜平成15年度に行った特定領域研究「人工IV族半導体の物性制御と超高速光・電子デバイスへの応用」の成果とりまとめを行うための期間とした。
本特定領域研究では、以下の研究項目に対応して3つの研究計画班を構成するとともに、研究推進と研究の方向付けを行うため、全体を統括するための総括班を設置し、研究を進めた。
研究項目A班 人工IV族半導体の形成と光・電子物性制御(代表者 白木(東大))
研究項目B班 人工IV族半導体極微細構造デバイス作製のための原子精度要素プロセスの開発(代表者 安田(名古屋大))
研究項目C班 人工IV族半導体極微細構造を用いた超高速光・電子デバイスの開発(代表者 室田(東北大))
平成16年度には、これまでの5年間にわたる研究機関で得られた成果を統括し、かつそれを国際的に発信するために、国際ワークショップ「3^<rd> International Workshop on New Group IV(Si-Ge-C)Semiconductors : Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices」を平成16年10月12日〜13日に仙台・東北大学において開催した。本ワークショップでは、本特定領域研究の研究分担者の発表のみならず、海外からの招待講演者、および、本枅究に深く関係する企業および研究機関の研究者が発表を行った。このワークショップにより、本特定領域研究において得られた成果を公表するとともに、それらが国際的な研究レベルにおいても重要な成果であることを確認することができた。これらの成果は、本年度に取りまとめた成果報告書をもってあらためて報告を行う予定である。

Research Products

• [Publications] K.Sawano, S.Koh, Y.Shiraki, N.Usami, K.Nakagawa: "In-plane strain fluctuation in strained-Si/SiGe heterostructures"APPLIED PHYSICS LETTERS. 83. 4339-4341 (2003)
• [Publications] K.Sawano, Y.Hirose, Y.Ozawa, S.Koh, J.Yamanaka, K.Nakagawa, T.Hattori, Y.Shirki: "Enhancement of strain relaxation of SiGe thin layers by pre-ion-implantation into Si substrates"JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS. 42. L735-L737 (2003)
• [Publications] K.Sawano, K.Kawaguchi, S.Koh, Y.Hirose, J.Yamanaka, K.Nakagawa, T.Hattori, Y.Shiraki: "Surface planarization of strain-relaxed SiGe buffer layers by CMP and post cleaning"JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 150. G376-G379 (2003)
• [Publications] K.Takahashi, M.Fujiu, M.Sakuraba, J.Murota: "Si Epitaxial Growth on SiH_3CH_3 Reacted Ge(1 0 0) and Intermixing between Si and Ge during Heat Treatment"Appl.Surf.Sci. 212-213. 193-196 (2003)
• [Publications] H.Shim, M.Sakuraba, T.Tsuchiya, J.Murota: "Work Function of Impurity-Doped Polycrystalline Si_<1-x-y>Ge_xC_y Film Deposited by Ultraclean Low-Pressure CVD"Appl.Surf.Sci.. 212・213. 209-212 (2003)
• [Publications] J.Noh, M.Sakuraba, J.Murota, S.Zaima, Y.Yasuda: "Contact Resistivity between Tungsten and Impurity (P and B)-Doped Si_<1-x-y>Ge_xC_y Epitaxial Layer"Appl.Surf.Sci.. 212・213. 679-683 (2003)
• [Publications] T.Kanaya, M.Sakuraba, J.Murota: "W Delta Doping in Si(1 0 0) Using Ultraclean Low-Pressure CVD"Appl.Surf.Sci.. 212・213. 684-688 (2003)
• [Publications] T.Tsuchiya, Y.Imada, J.Murota: "Direct Measurements of Trap Density in a SiGe/Si Hetero-Interface and Correlation Between the Trap Density and Low-Frequency Noise in SiGe-Channel pMOSFETs"IEEE Trans.Electron Devices. 50. 2507-2512 (2003)
• [Publications] J.Noh, S.Takehiro, M.Sakuraba, J.Murota: "Relationship between Impurity (B or P) and Carrier Concentration in SiGe(C) Epitaxial Film Produced by Thermal Treatment"Appl.Surf.Sci.. 224. 77-81 (2004)
• [Publications] Y.Shimamune, M.Sakuraba, J.Murota: "Formation of Heavily P Doped Si Epitaxial Film on Si(1 0 0) by Multiple Atomic-Layer Doping Technique"Appl.Surf.Sci. 224. 202-205 (2004)
• [Publications] M.Fujiu, K.Takahashi, M.Sakuraba, J.Murota: "Effect of Carbon on the Thermal Stability of a Si Atomic Layer on Ge(1 0 0)"Appl.Surf.Sci.. 224. 206-209 (2004)
• [Publications] D.Lee, S.Takehiro, M.Sakuraba, J.Murota, T.Tsuchiya: "Fabrication of 0.12-μm SiGe-Channel MOSFET Containing High Ge Fraction with Ultrashallow Source/Drain Formed by Selective B-Doped SiGe CVD"Appl.Surf.Sci.. 224. 254-259 (2004)
• [Publications] S.Zaima, A.Sakai, Y.Yasuda: "Control in the initial growth stage of heteroepitaxial Si_<1-x-y>Ge_xC_y on Si(0 0 1) substrates"Applied Surface Science. 212・213. 184-192 (2003)
• [Publications] K.Sasaki, T.Ikeda, M.Kitai, H.Konta, T.Hata: "Investigation of Effect of Sputtering Gases on Ion-Beam-Sputtering Growth of Si and Ge"Transactions of Materials Research Society of Japan. 28(4). 1157-1159 (2003)
• [Publications] K.Sasaki, K.Kawai, T.Hasu, M.Yabuuchi, T.Hata: "Feasibility of Ultra-thin Films for Gate Insulator by Limited Reaction Sputtering Process"IEICE Transactions on Electronics. E87-C(2). 218-222 (2004)
• [Publications] J.Noh, M.Sakuraba, J.Murota, S.Zaima, Y.Yasuda: "Contact resistivity between tungsten and impurity (P and B)-doped Si_<1-x-y>Ge_xC_y epitaxial layer"Applied Surface Science. 212・213. 679-683 (2003)
• [Publications] T.Egawa, A.Sakai, T.Yamamoto, N.Taoka, O.Nakatsuka, S.Zaima, Y.Yasuda: "Strain-relaxation mechanisms of SiGe layers formed by two-step growth on Si(0 0 1) substrates"Applied Surface Science. 224(1-4). 104-107 (2004)
• [Publications] T.Yamamoto, A.Sakai, T.Egawa, N.Taoka, O.Nakatsuka, S.Zaima, Y.Yasuda: "Dislocation structures and strain-relaxation in SiGe buffer layers on Si (0 0 1) substrates with an ultra-thin Ge interlayer"Applied Surface Science. 224(1-4). 108-112 (2004)
• [Publications] S.Ariyoshi, S.Takeuchi, O.Nakatsuka, A.Sakai, S.Zaima, Y.Yasuda: "Influence of Si_<1-x>Ge_x interlayer on the initial growth of SiGeC on Si(100)"Applied Surface Science. 224(1-4). 117-121 (2004)
• [Publications] S.Zaima, O.Nakatsuka, A.Sakai, J.Murota, Y.Yasuda: "Interfacial reaction and electrical properties in Ni/Si and Ni/SiGe(C) contacts"Applied Surface Science. 224(1-4). 215-221 (2004)
• [Publications] K.Kawaguchi: "Optical properties of strain-balanced SiGe planar microcavities With Ge dots on Si substrates"Applied Physics Letters. 81. 817 (2002)
• [Publications] T.Irisawa: "Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures"Applied Physics Letters. 81. 847 (2002)
• [Publications] K.Kawaguchi: "Optical properties of strain-balanced Si/sub 0.73/Ge/sub 0.27/planar microcavities on Si substrates"Japanese Journal of Appliea Physics, Part 1 (Regular Papers, Short Notes & Review Papers). 41. 2664 (2002)
• [Publications] A.Tobioka: "Study on solid-phase reactions in Ti/p+-Si1-x-yGexCy/Si(100) contacts"Materials Science and Engineering B. 89. 373 (2002)
• [Publications] J.Murota: "Atomically controlled processing for group IV semiconductors"Surf. Interface Analysis. 34. 423 (2002)
• [Publications] O.Jintsugawa: "Thermal nitridation of ultrathin SiO2 on Si by NH3"Surf. Interface Analysis. 34. 456 (2002)
• [Publications] K.Kawaguchi, S.Koh, Y.Shiraki, J.Zhang: "Fabrication of strain-balanced Si0.73Ge0.27/Si distributed Bragg reflectors on Si substrates"Applied Physics Letters. 79. 476-478 (2001)
• [Publications] K.Kawaguchi, Y.Shiraki, N.Usami, J.Zhang, N.J.Woods, G.Breton, G.Parry: "Fabrication of strain-balanced Si/Si1-xGex multiple quantum wells on Si1-yGey virtual substrates and their optical properties"Applied Physics Letters. 79. 344-346 (2001)
• [Publications] T.Watanabe, M.Sakuraba, T.Matsuura, J.Murota: "Atomic-order thermal nitridation of Si (100) and subsequent growth of Si"Journal of Vacuum Science and Technology A. 19, PartII. 1907-1911 (2001)
• [Publications] H.Ikeda, A.Tobioka, Y.Tsuchiya, A.Sakai, Y.Yasuda, S.Zaima, J.Murora: "Study on solid-phase reaction in Ti/p+-Si1-x-yGexCy/Si contacts"Materials Science B. (発表予定).
• [Publications] T.Kanetsuna, T.Matsuura, J.Murota: "Surface adsorption and reaction of chlorine on impurity-doped Si using an electron-cyclotron-resonance plasma"Journal of Electrochemical Society. 148. G420-G423 (2001)
• [Publications] Usami N, Azuma Y, Ujihara T, Sazaki C, Miyashita S, Murakami Y, Nakajima K: "Growth of SixGe1-x (x=0.15) bulk crystal with uniform composition utilizing in situ monitoring of the crystal-solution interface"JAPANESE JOURNAL OF APPLIED PHYSICS. 40(6A). 4141-4144 (2001)
• [Publications] I.Suzumura: "Nucleation and growth of Ge on Si (111) in solid phase epitaxy"Thin Solid Films. 369/1-2. 116-120 (2000)
• [Publications] O.Nakatsuka: "Interfacial reactions of Ti/ and Zr/Si1-xGex/Si contacts with rapid thermal annealing"Thin Solid Films. 373/1-2. 73-78 (2000)
• [Publications] K.Kawaguchi: "Fabrication of strain-balanced Si/Si1-xGex multiple quantum well on Si 1-yGey virtual substrates and their optical properties"Appl.Phys.Lett.. (発表予定).
• [Publications] K.Kawaguchi: "Fabrication of strain-balanced Si0.73Ge0.27/Si distributed Bragg reflectors on Si substrates"Appl.Phys.Lett.. (発表予定).
• [Publications] T.Noda et al: "Doping and Electrical Characteristics of in-situ Heavily B-Doped Si_<1-x-y>Ge_xC_y Films Epitaxially Grown Using Ultraclean LPCVD"Thin Solid Films. Vol.380. 57-60 (2000)
• [Publications] 室田淳一 他: "CVD Si_<1-x>Ge_xエピタキシャル成長とドーピング制御"日本結晶成長学会誌. Vol.27,No.4. 171-178 (2000)
• [Publications] K. Kawaguchi: "Formation of relaxed SiGe films on Si by selective epitaxial growth"Thin Solid Films. (発表予定).
• [Publications] H. Takamiya: "Drastic modification of the growth mode of Ge quantum dots on Si by using boron adlayer"Thin Solid Films. (発表予定).
• [Publications] Hirotaka Iwano: "Effect of Ge atoms on interfacial reactions of Ti/ and Zr/Si1-xGex/Si contacts"Advanced Metallization and Interconnect Systems for ULSI Applications edited by G.S. Sandhu, H. Koerner, M. Murakami, Y, Yasuda, N. Kobayashi. 599-604 (1999)
• [Publications] Masahisa Okada: "Epitaxial growth of heavily B-doped SiGe films and interfacial reaction of Ti/B-doped SiGe bilayer structure using rapid thermal processing"Appl. Surf. Sci.. (発表予定).
• [Publications] J. Murota: "CVD Si1-xGex Epitaxial Growth and Its Application to MOS Devices"Proceedings of the SPIE Conference on Microelectronic Device Technology III, The International Society for Optical Engineering. 33-45 (1999)
• [Publications] T. Tsuchiya: "Drain Leakage Current and Instability of Drain Current in Si/Si1-xGex MOSFETs"Thin Solid Films. (発表予定).