人工IV族半導体極微細構造を用いた超高速光・電子デバイスの開発

• Project/Area Number: 11232201
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering
• Research Institution: Tohoku University
• Principal Investigator: 室田 淳一 東北大学, 電気通信研究所, 教授 (70182144)
• Co-Investigator(Kenkyū-buntansha): 土屋 敏章 島根大学, 総合理工学部, 教授 (20304248) ; 栗野 浩之 東北大学, 大学院・工学研究科, 助教授 (70282093) ; 小柳 光正 東北大学, 大学院・工学研究科, 教授 (60205531) ; 杉山 直治 (株)東芝, 基礎研究所, 研究主務 ; 小野 昭一 アルプス電気(株), 最高技術顧問(常勤研究職) ; 松浦 孝 東北大学, 電気通信研究所, 助教授 (60181690)
• Project Period (FY): 1999 – 2003
• Project Status: Completed (Fiscal Year 2003)
• Budget Amount: ¥190,800,000 (Direct Cost: ¥190,800,000); Fiscal Year 2003: ¥21,400,000 (Direct Cost: ¥21,400,000); Fiscal Year 2002: ¥30,600,000 (Direct Cost: ¥30,600,000); Fiscal Year 2001: ¥32,000,000 (Direct Cost: ¥32,000,000); Fiscal Year 2000: ¥54,600,000 (Direct Cost: ¥54,600,000); Fiscal Year 1999: ¥52,200,000 (Direct Cost: ¥52,200,000)
• Keywords: SiGe / SiGeC / MOS / HBT / CVD / 選択成長 / 不純物ドーピング / 高精度エッチング / CVD低温選択成長 / in-situ不純物ドーピング / 不純物拡散 / 高選択異方性エッチング

Research Abstract

本研究では、人工IV族半導体超高速光・電子デバイスを開発することを目指し、Si-Ge(-C)系のIV族半導体極微細構造をデバイスに搭載した極微細MOSFET、ヘテロバイポーラトランジスタ(HBT)、Si/SiGe/Si-SOI構造の新デバイス等による低電圧・低消費電力・超高速・新機能付集積回路を設計し、それを表面・界面構造劣化の生じない低温高清浄プロセスを駆使して製作する技術を構築し、デバイス試作とその評価・デバイス物理の検討を通して極微細化・超高速化の最適方法を明らかにしようとしている。本年度は5年計画の第5年目として、新高精度要素プロセスの標準デバイス製作プロセスへの導入と、新構造原子制御半導体の応用による新物性・新機能のデバイス搭載について研究した。具体的には、マルチステップアニール法による選択成長SiGeの低抵抗Niシリサイド形成技術をElvatedソース・ドレイン構造に適用し、高性能完全空乏型SOI-MOSFETを実現した。また、SiGe選択エッチングによるマルチチャネルMOS構造を提案し、超高電流駆動能力化に有効であることを示した。酸化濃縮により形成した高品質SiGe-On-Insulator(SGOI)基板上に成長させた歪Siをチャネルに適用したMOSデバイスは高電流駆動力化と同時に基板浮遊効果が抑制されるごとを明らかにした。さらに、SiGeヘテロチャネルpMOSFETにおける低周波雑音強度は界面捕獲準位密度にほぼ比例して増加することを見いだすとともに、BドープSiGe薄膜からのSi/SiGe/Siヘテロ構造へのB拡散工程において、SiGe中でのB拡散抑制・偏析現象によるB拡散層の極浅化・低抵抗化現象を見いだし、短チャネルSiGeヘテロチャネルMOSFETの高性能化に有効であることを実証した。このようにデバイス主要部分へのSi-Ge(-C)系IV族半導体薄膜適用は、デバイスの極微細化・超高速化に有効であることを示した。

Research Products

• [Publications] K.Takahashi et al.: "Si Epitaxial Growth on SiH_3CH_3 Reacted Ge(1 0 0) and Intermixing between Si and Ge during Heat Treatment"Appl.Surf.Sci.. Vol.212-213. 193-196 (2003)
• [Publications] H.Shim et al.: "Work Function of Impurity-Doped Polycrystalline Si_<1-x-y>Ge_xC_y Film Deposited by Ultraclean Low-Pressure CVD"Appl.Surf.Sci.. Vol.212-213. 209-212 (2003)
• [Publications] J.Noh et al.: "Contact Resistivity between Tungsten and Impurity (P and B)-Doped Si_<1-x-y>Ge_xC_y Epitaxial Layer"Appl.Surf.Sci.. Vol.212-213. 679-683 (2003)
• [Publications] T.Kanaya et al.: "W Delta Doping in Si(1 0 0) Using Ultraclean Low-Pressure CVD"Appl.Surf.Sci.. Vol.212-213. 684-688 (2003)
• [Publications] T.Tsuchiya et al.: "Direct Measurements of Trap Density in a SiGe/Si Hetero-Interface and Correlation Between the Trap Density and Low-Frequency Noise in SiGe-Channel pMOSFETs"IEEE Trans.Electron Devices. Vol.50,No.12. 2507-2512 (2003)
• [Publications] J.Noh et al.: "Relationship between Impurity (B or P) and Carrier Concentration in SiGe(C) Epitaxial Film Produced by Thermal Treatment"Appl.Surf.Sci.. Vol.224. 77-81 (2004)
• [Publications] K.Usuda et al.: "Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation"Appl.Surf.Sci.. Vol.224. 113-116 (2004)
• [Publications] N.Sugiyama et al.: "Kinetics of epitaxial growth of Si and SiGe films on (1 1 0) Si substrates"Appl.Surf.Sci.. Vol.224. 188-192 (2004)
• [Publications] Y.Shimamune et al.: "Formation of Heavily P Doped Si Epitaxial Film on Si(1 0 0) by Multiple Atomic-Layer Doping Technique"Appl.Surf.Sci.. Vol.224. 202-205 (2004)
• [Publications] M.Fujiu et al.: "Effect of Carbon on the Thermal Stability of a Si Atomic Layer on Ge(1 0 0)"Appl.Surf.Sci.. Vol.224. 206-209 (2004)
• [Publications] S.Takagi et al.: "Fabrication and device characteristics of strained-Si-on-insulator (strained-SOI) CMOS"Appl.Surf.Sci.. Vol.224. 241-247 (2004)
• [Publications] D.Lee et al.: "Fabrication of 0.12-μm SiGe-Channel MOSFET Containing High Ge Fraction with Ultrashallow Source/Drain Formed by Selective B-Doped SiGe CVD"Appl.Surf.Sci.. Vol.224. 254-259 (2004)
• [Publications] J.C.Shim et al.: "SiGe elevated source/drain structure and nickel silicide contact layer for sub 0.1μm MOSFET fabrication"Appl.Surf.Sci.. Vol.224. 260-264 (2004)
• [Publications] D.Sasaki et al.: "Proposal of a multi-layer channel MOSFET : the application of selective etching for Si/SiGe stacked layers"Appl.Surf.Sci.. Vol.224. 270-273 (2004)
• [Publications] J.Murota et al.: "Atomically controlled processing for group IV semiconductors"Surf Interface Anal.. Vol.34. 423-431 (2002)
• [Publications] O.Jintsugawa et al.: "Thermal nitridation of ultrathin SiO_2 on Si by NH_3"Surf. Interface Anal.. Vol.34. 456-459 (2002)
• [Publications] 栗野浩之 他: "ウェーハレベル3次元集積化技術"表面技術. 第53巻 第4号. 228-232 (2002)
• [Publications] Y.C.Jeong et al.: "Atomic-Layer Doping of N in Si Epitaxial Growth on Si(100) and its Thermal Stability"Proceedings of the 19th International Symposium on Silicon Material Science and Technology, 201th Meeting of the Electrochemical Society. 287-296 (2002)
• [Publications] M.Mori et al.: "Si Epitaxial Growth on Atomic-Order Nitrided Si(100) Using an ECR Plasma"201st Meeting of The Electrochemical Society. Abs.No.402 (2002)
• [Publications] T.Yamazaki et al.: "Double-Polysilicon Self-Aligned HBT with Non-Selective Epitaxial SiGe : C Base Layer"2nd Int. Workshop on New Group IV (Si-Ge-C) Semiconductors : Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices. (2002)
• [Publications] J.Murota et al.: "Atomically Controlled Heterostructure Growth of Group IV Semiconductors"3rd "Trends in NanoTechnology" International Conference (TNT2002). 377 (2002)
• [Publications] J.Murota et al.: "SiGe Epitaxial CVD Technology for Si-Based Ultrasmall Devices (Invited Paper)"Meeting Abstracts of International Semiconductor Technology Conference (ISTC 2002), The Electrochemical Society. Abs.No.53 (2002)
• [Publications] D.Lee et al.: "0.1μm pMOSFETs with SiGe-Channel and B-Doped SiGe Source/Drain Layers"Extended Abstracts of the 2002 Int. Conf. on Solid State Devices and Materials (SSDM 2002). 764-765 (2002)
• [Publications] JeoungChill Shim et al.: "Novel Nickel Silicide Formation Technique For Sub-50nm MOS Device Application"Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials (SSDM2002). 434-435 (2002)
• [Publications] Y.Yamada et al.: "Silicon-On-Low-K Substrate (SOLK) Technology For High-Speed And Low-Power Devices"Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials (SSDM2002). 794-795 (2002)
• [Publications] T.Tsuchiya et al.: "Evaluation of Interface-Trap Density in a SiGe/Si Heterostructure Using a Charge Pumping Technique and Correlation between the Trap Density and Low Frequency Noise in SiGe-Channel pMOSFETs"32nd European Solid-State Device Research Conference (ESSDERC 2002). 239-242 (2002)
• [Publications] D.Lee et al.: "Fabrication of 0.12-μm SiGe-Channel MOSFET Containing High Ge Fraction with Ultrashallow Source/Drain Formed by Selective B-Doped SiGe CVD"First International SiGe Technology and Device Meeting (ISTDM 2003). 17-18 (2003)
• [Publications] T.Sakai et al.: "A Proposal of Multi-Layer Channel MOSFET : The Application of Selective Etching for Si/SiGe Stacked Layers"First International SiGe Technology and Device Meeting (ISTDM 2003). 31-32 (2003)
• [Publications] S.Takagi et al.: "Fabrication and Device Characteristics of Strained-Si-On-Insulator (Strained-SOI) CMOS"First International SiGe Technology and Device Meeting (ISTDM 2003). 269-270 (2003)
• [Publications] H.Kanno et al.: "Ge dependent morphological change in poly-SiGe formed by Ni-mediated crystallization"First International SiGe Technology and Device Meeting (ISTDM 2003). 183-185 (2003)
• [Publications] J.Noh et al.: "Relationship between Total Impurity (B or P) and Carrier Concentrations in SiGe Epitaxial Film Produced by the Thermal Treatment"First International SiGe Technology and Device Meeting (ISTDM 2003). 165-166 (2003)
• [Publications] H.-S.Cho et al.: "Etching Characteristics of Impurity-Doped Si_<1-x>Ge_x Epitaxial Films Using Electron-Cyclotron-Resonance Chlorine Plasma"First International SiGe Technology and Device Meeting (ISTDM 2003). 181-182 (2003)
• [Publications] Y.C.Jeong et al.: "Epitaxial Growth of N Delta Doped Si Films on Si(100) by Alternately Supplied NH_3 and SiH_4"First International SiGe Technology and Device Meeting (ISTDM 2003). 243-244 (2003)
• [Publications] Y.Shimamune et al.: "Formation of Heavily P Doped Si Epitaxial Film on Si(100) by Multiple Atomic-Layer Doping Technique"First International SiGe Technology and Device Meeting (ISTDM 2003). 247-248 (2003)
• [Publications] M.Fujiu et al.: "Carbon Effect on Thermal Stability of Si Atomic Layer on Ge(100)"First International SiGe Technology and Device Meeting (ISTDM 2003). 249-250 (2003)
• [Publications] S.Takehiro et al.: "Characterization of High Ge Fraction SiGe-Channel MOSFET with Ultrashallow Source/Drain Formation by Selective B-Doped SiGe CVD"3rd Int. Conf. on SiGe(C) Epitaxy and Heterostructures (ICSI3). 179-181 (2003)
• [Publications] T.Watanabe et al.: "Atomic-Order Thermal Nitridation of Si (100) and Subsequent Growth of Si"J. Vac. Sci. Technol. A.. Vol.19, No.4, Part II. 1907-1911 (2001)
• [Publications] D.Lee et al.: "Phosphorus Doping in Si_<1-x-y>Ge_xC_y Epitaxial Growth by Low-Pressure Chemical Vapor Deposition Using a SiH_4-GeH_4-CH_3SiH_3-PH_3-H_2 Gas System"Jpn. J. Appl. Phys.. Vol.40, Part 1. 2697-2700 (2001)
• [Publications] T.Kanetsuna et al.: "Surface Adsorption and Reaction of Chlorine on Impurity-Doped Single Crystalline Si Using Electron Cyclotron Resonance Plasma"J. Electrochem. Soc.. Vol.148, No.8. G420-G423 (2001)
• [Publications] 室田淳一 他.: "CVD法によるSi_<1-x-y>Ge_xC_yエピタキシャル成長とドーピング制御"応用物理学会誌. 第70巻,第9号. 1082-1086 (2001)
• [Publications] Y.Shimamune et al.: "Epitaxial Growth of Heavily P-doped Si Films at 450℃ by Alternately Supplied PH3 and SiH_4"J. Phys. IV France.. Vol.11, Pr3. 255-260 (2001)
• [Publications] T.Tsuchiya et al.: "Low-Frequency Noise in Si_<1-x>Ge_x p-Channel Metal Oxide Semiconductor Field-Effect Transistors"Jpn. J. Appl. Phys.. Vol.40, Part 1. 5290-5293 (2001)
• [Publications] T.Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction in MOSFETs Using Selective Si_<1-x>Ge_x CVD"Materials Science and Engineering B.. Vol.89, Issues 1-3. 120-124 (2002)
• [Publications] T.Sadoh et al.: "Thermal stability of B in poly-SiGe on SiON"Materials Science and Engineering B. Vol.89. 129-132 (2002)
• [Publications] T.Sadoh et al.: "Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON"Jpn. J. Appl. Phys.. (to be published). (2002)
• [Publications] Y.Shimamune et al.: "Doping and Electrical Characteristics of Si Films Eptaxially Grown at 450℃ by Allernaick Supplied PH_3 and SiH_4"2001 Spring Meeting, The European Materials Research Society, Strasbourg, France. D-X,3 (2001)
• [Publications] F.Fujiu et al.: "Influence of Carbon on Thermal Stability of Silicon Atomic Layer Formed on Ge(100)"2001 Spring Meeting, The European Materials Research Society. D-VIII/P9 (2001)
• [Publications] T.Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction MOSFETs Using Selective Si_<1-x>Ge_x"2001 Spring Meeting, The European Materials Research Society. DV/P20 (2001)
• [Publications] A.Tobioka et al.: "Study on Solid Phase Reaction in Ti/p^+-Si_<1-x>Ge_xC_y/Si Contacts"2001 Spring Meeting, The European Materials Research Society. D-XIII/P1 (2001)
• [Publications] J.Murota et al.: "Atomically Precise Control of Heterointer faces for High-Performance SiGe-Based Heterodevices"2001 Advanced Research Workshop, Future Trends in Microelectronics. 51 (2001)
• [Publications] J.Murota et al.: "Atomically Controlled Processing for Group IV Semiconductors (Keynote Lecture)"9th European Conference on Applications of Surface and Interface Analysis (SIA). 20 (2001)
• [Publications] T.Seino: "Atomic-Order Nitridation of SiO_2 by a Nitrogen Plasma"9th European Conference on Applications of Surface and Interface Analysis (SIA). 193 (2001)
• [Publications] O.Jintsugawa et al.: "Thermal Nitridation of Ulirathin SiO_2 on Si by NH_3"9th European Conference on Applications of Surface and Interface Analysis (SIA). 194 (2001)
• [Publications] J.Murota et al.: "CVD SiGe(C) Epitaxial Growth and Its Application to MOS Devices (Invited Paper)"The Sixth International Conference on Solid-State and Integrated-Circuit Technology. 525-530 (2001)
• [Publications] T.Tsuchiya et al.: "Exploration of SiGe/Si Heterostructure Interface in SiGe-Channel MOSFETs (Invited Paper)"The Sixth International Conference on Solid-State and Integrated-Circuit Technology. 575-579 (2001)
• [Publications] T.Seino et al.: "Atomic-Order Plasma Nitridation of Ultrathin Silicon Dioxide Films"AVS 48th International Symposium. 53 (2001)
• [Publications] Y.Hashiba: "Growth Characteristics of Si_<1-x>Ge_xC_y on Si(100) and SiO_2 in Ultraclean Low-Temperature LPCVD"AVS 48th International Symposium. 135 (2001)
• [Publications] D.Muto et al.: "Self-Limited Layer-by-Layer Growth of Si by Alternated SiH_4 Supply and Ar Plasma Exposure"AVS 48th International Symposium. 179 (2001)
• [Publications] T.Matsuura et al.: "Application of Photosensitive Methylsilsesquiazane(MSZ) to Lithographic Fabrication of Three Dimensional Periodic Structures"AVS 48th International Symposium. 229 (2001)
• [Publications] Y.C.jeong et al.: "Si Epitaxial Growth on the Atomic-Order Nitrided Si(100) Surface in SiH_4 Reaction"2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices. Abs.8.3 (2001)
• [Publications] Y.Shimamune et al.: "Heavy Doping Characteristics of Si Films Epitaxially Grown at 450℃ by Alternately Supplied PH_3 and SiH_4"2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices. Abs.8.4 (2001)
• [Publications] T.Sadoh et al.: "Thermal stability of B in poly-SiGe on SiON"E-MRS Spring Meeting. D-V/P22 (2001)
• [Publications] M.Miyao et al.: "Post-annealing behavior of in-situ doped Poly-SiGe on SiON"The 13th International Conference on Crystal Growth (ICCG13). 31p-S13-04 (2001)
• [Publications] T.Sadoh et al.: "Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON"International Conference on Solid State Devices and Materials. (2001)
• [Publications] H.Choi et al.: "New SOI Flash Memory with Side Channel and Side Floating Gate"Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials. 246-247 (2001)
• [Publications] H.Oh et al.: "Ultra-Shallow Junction Formed Using Laser Annealing for Sub-50nm MOS"Extended Abstracts of the Second International Workshop on Junction Technology. 95-98 (2001)
• [Publications] 栗野浩之 他: "レーザーアニールを用いた原子層吸着拡散"応用物理学会分科会シリコンテクノロジー. 8-31 (2001)
• [Publications] K.Koh et al.: "Ultra-shallow Junction of SOI MOSFET with In-situ Elevated SiGe Source/Drain"Abstract model E-MRS 2001 Spring Meeting. D.27 (2001)
• [Publications] T.Tsuchiya et al.: "Noise Characteristics in Floating-Body SOI MOSFETs"International Conf. on Solid State Devices and Materials. 272-273 (2001)
• [Publications] T.Seino et al: "Contribution of Radicals and Ions in Atomic-Order Plasma Nitridation of Si"Appl.Phys.Lett.. Vol.76,No.3. 342-344 (2000)
• [Publications] P.Han et al: "Observation of Sharp Current Peaks in Resonant Tunneling Diode with Strained Si_<0.6>Ge_<0.4>/Si(100) Grown by Low-Temperature Low-Pressure CVD"J.Crystal Growth. Vol.209,No.2-3. 315-320 (2000)
• [Publications] T.Takatsuka et al: "Surface Reaction of CH_3SiH_3 on Ge(100) and Si(100)"Appl.Surf.Sci.. Vol.162-163. 156-160 (2000)
• [Publications] Y.Shimamune et al: "Atomic-Layer Adsorption of P on Si(100) and Ge(100) by PH_3 Using an Ultraclean Low-Pressure Chemical Vapor Deposition"Appl.Surf.Sci.. Vol.162-163. 390-394 (2000)
• [Publications] A.Ichikawa et al: "Epitaxial Growth of Si_<1-x-y>Ge_xC_y Film on Si(100) in a SiH_4-GeH_4-CH_3SiH_3 Reaction"Train Solid Films. Vol.369,No.1-2. 167-170 (2000)
• [Publications] S.Kobayashi et al: "Segregation and Diffusion of Impurities from Doped Si_<1-x>Ge_x Films into Silicon"Thin Solid Films. Vol.369,No.1-2. 222-225 (2000)
• [Publications] T.Tsuchiya et al: "Drain Leakage Current and Instability of Drain Current in Si/Si_<1-x>Ge_x MOSFETs"Thin Solid Films. Vol.369,No.1-2. 379-382 (2000)
• [Publications] H.Takeuchi et al: "Contribution of Ions and Radicals in Etching of Si_<1-x>Ge_x Epitaxial Films Using an Electron-Cyclotron-Resonance Chlorine Plasma"Appl.Phys.Lett.. Vol.77,No.12. 1828-1830 (2000)
• [Publications] T.Noda et al: "Doping and Electrical Characteristics of in-situ Heavily B-Doped Si_<1-x-y>Ge_xC_y Films Epitaxially Grown Using Ultraclean LPCVD"Thin Solid Films. Vol.380. 57-60 (2000)
• [Publications] Y.Shimamune et al: "Atomic-Layer Doping in Si by Alternately Supplied PH_3 and SiH_4"Thin Solid Films. Vol.380. 134-136 (2000)
• [Publications] 室田淳一 他: "CVDSi_<1-x>Ge_xエピタキシャル成長とドーピング制御"日本結晶成長学会誌. Vol.27,No.4. 171-178 (2000)
• [Publications] Y.Nakabayashi et al: "Epitaxial Growth of Pure ^<30>Si Layers on a Natural Si(100) Substrate Using Enriched ^<30>SiH_4"Jpn.J.Appl.Phys.. Vol.39. L1133-L1134 (2000)
• [Publications] P.Han et al: "The Effect of Si/Si_<1-y>C_y/Si Barriers on the Characteristics of Si_<1-x>Ge_x/Si Resonant Tunneling Structure"Chin.Phys.Lett.. Vol.17. 844 (2000)
• [Publications] T.Watanabe et al: "Atomic-Order Thermal Nitridation of Si (100) and Subsequent Growth of Si"J.Vac.Sci.Technol.A. Vol.19,No.4(in press). (2000)
• [Publications] D.Lee et al: "Phosphorus Doping in Si_<1-x-y>Ge_xC_y Epitaxial Growth by Low-Pressure Chemical Vapor Deposition Using a SiH_4-GeH_4-CH_3SiH_3-PH_3-H_2 Gas System"Jpn.J.Appl.Phys.. Vol.40,No.4B(in press). (2001)
• [Publications] T.Kanetsuna et al: "Surface Adsorption and Reaction of Chlorine on Impurity Doped Si Using an ECR Plasma"Abs.of 197th Meeting of the Electrochemical Society. 294 (2000)
• [Publications] Y.Yamamoto et al: "Surface Adsorption of WF_6 on Si and SiO_2 in Selective W-CVD"Abs.of 197th Meeting of the Electrochemical Society. 928 (2000)
• [Publications] D.Lee et al: "In-Situ Impurity Doping in Si_<1-x-y>Ge_xC_y Epitaxial Growth Using Ultraclean LPCVD"Abs.of 2000 International Conf.on Solid State Devices and Materials. 206-207 (2000)
• [Publications] T.Matsuura et al: "A Novel Lithographic Method for Fabricating Three Dimensional Periodic Stacks"Abs.of 2000 International Conf.on Solid State Devices and Materials. 542-543 (2000)
• [Publications] M.Fujiu et al: "Thermal Stability of Si and C Atomic Layers Formed on Ge(100) in Silane and Methylsilane Reactions"Abs.of American Vacuum Society 47th Internatonal Symposium : Vacuum Thin Films, Surafces/Interfaces, Processing & NANO-6. TF-MoM4 (2000)
• [Publications] O.Jintsugawa et al: "Thermal Nitridation of Ultrathin Silicon Dioxide Films Using NH_3 Gas"Abs.of American Vacuum Society 47th Internatonal Symposium : Vacuum Thin Films, Surafces/Interfaces, Processing & NANO-6. SC1+EL+SS-Mo4 (2000)
• [Publications] T.Seino et al: "Thermal Effects in Atomic-Order Nitridation of Si by a Nitrigen Plasma"Abs.of American Vacuum Society 47th Internatonal Symposium : Vacuum Thin Films, Surafces/Interfaces, Processing & NANO-6. PS-WeP17 (2000)
• [Publications] K.Matsuda et al: "A New Process for Fabricating Three-Dimensional Periodic Structures Made of Photo-Resists"Abs.of Materials Research Society 2000 Fall Meeting. E1.6 (2000)
• [Publications] Y.Shimamune et al: "Heavily P-doped Si Films Epitaxially Grown at 450℃ by Alternately Supplied PH_3 and SiH_4"Abs.of 2000 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures. 76 (2000)
• [Publications] J.Murota et al: "Atomically Controlled Processing for Fabrication of Si-based Ultimate-Small Devices"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 131-134 (2000)
• [Publications] T.Seino et al: "Influence of Surface Heating due to Plasma Exposure on Atomic-Order Plasma Nitridation of Si"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 223-226 (2000)
• [Publications] O.Jintsugawa et al: "Thermal Nitridation of Ultrathin Silicon Dioxide Films Using NH_3 Gas"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 227-230 (2000)
• [Publications] T.Watanabe et al: "Nitrogen-Doped Si Epitaxial Growth by Alternately Supplied NH_3 and SiH_4"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 258-261 (2000)
• [Publications] M.Fujiu et al: "Surface Reaction of Silane and Methylsilane on Ge(100)"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 262-265 (2000)
• [Publications] Y.Shimamune et al: "Very Low-Resistive Si Epitaxial Growth at 450℃ by Alternately Supplied PH_3 and SiH_4"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 266-269 (2000)
• [Publications] D.Lee et al: "Epitaxial Growth and Electrical Characteristics of Impurity-Doped Si_<1-x-y>Ge_xC_y on Si(100) by Ultraclean LPCVD"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 270-273 (2000)
• [Publications] Y.Yamamoto et al: "Surface Adsorption and Reaction on Si and SiO_2 at Very Low Temperature in a WF_6-SiH_4 Gas System"Abs.of Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop). 294-297 (2000)
• [Publications] T.Tsuchiya et al: "Low-Frequency-Noise and Its Correlation with Transconductance in Si_<1-x>Ge_x Channel pMOSFET"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. II-01 (2001)
• [Publications] T.Yamashiro et al: "Fabrication of 0.1um MOSFETs with Super Self-Aligned Ultrashallow Junction Formed by Selective In-Situ Doped Si_<1-x>Ge_x CVD"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. II-07 (2001)
• [Publications] A.Fukuchi et al: "Etching Feature Improvement by Side-Wall Protection with B in P-Doped Polysilicon"Abs.of First Int.Workshop on New Group IV(St-Ge-C) Semiconductors. II-11 (2001)
• [Publications] Y.Shimamune et al: "Heavy Doping Characteristics in Si Epitaxial Growth at 45O℃ by Alternate Supplies of PH_3 and SiH_4"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. II-12 (2001)
• [Publications] Y.Kunii et al: "Development of Ultraclean LPCVD Equipment for SiGe(C) Epitaxial Growth"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. IV-05 (2001)
• [Publications] T.Noda et al: "B- and P-Doped SiGe(C) Epitaxial Growth on Si(100) by Ultraclean LPCVD"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. IV-08 (2001)
• [Publications] A.Tobioka et al: "Study on Solid-Phase Reactions in Ti/p^+-Si_<1-x-y>Ge_xC_y/Si(100) Contacts"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. IV-03 (2001)
• [Publications] T.Seino et al: "Atomic-Order Plasma Nitridation of Si under the Si Surface Cooling"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. VI-18 (2001)
• [Publications] M.Fujiu et al: "Self-Limiting Surface Reactiomt of SiH_4 and CH_3SiH_3 on Ge(100)"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. VI-19 (2001)
• [Publications] O.Jintsugawa et al: "Thermal Nitridation of Ultrathin Silicon Dioxide Films at 750-850℃ in an NH_3 Environment"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. VI-20 (2001)
• [Publications] S.Ishida et al: "Buffered HF Etching Characteristics of Si_<1-x-y>Ge_xC_y Epitaxial Films"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. VI-21 (2001)
• [Publications] Y.Nakabayashi et al: "Epitaxial Growth of Pure ^<30>Si Layers on a Natural Si(100) Substrate Using Enriched ^<30>SiH_4"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. VI-25 (2001)
• [Publications] T.Sadoh et al: "Improvement of Thermal Stability in In-Situ Doped Poly-SiGe Gate on SiON"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. II-10 (2001)
• [Publications] K.W.Koh et al: "Ultrashallow Junction with Elevated SiGe Source/ Drain Fabricated by Laser Induced Atomic Layer Doping"Abs.of First Int.Workshop on New Group IV(Si-Ge-C) Semiconductors. II-09 (2001)
• [Publications] T.Seino et al: "Side-Wall Protection by B in P-doped Polysilicon in Gate Etching"Proceedings of the Second International Symposium on ULSI Process, 199th Meeting of the Electrochemical Society. (in press). (2001)
• [Publications] T.Tsuchiya et al: "Low Frequency Noise in Si_<1-x>Ge_x-Channel pMOSFETs"Proceedings or the Second International Symposium on ULSI Process, 199th Meeting of the Electrochemical Society. (in press). (2001)
• [Publications] Y.Shimamune et al: "Epitaxial growth of heavily P-doped Si films at 450℃ by alternately supplied PH_3 and SiH_4"Abs.of the 13th European Conference on Chemical Vapor Deposition. (accepted). (2001)
• [Publications] J.Murota: "Atomically Controlled Processing for Group IV Semiconductors"Abs.of the 9th European Conference on Applications of Surface and Interface Analysis. (invited). (2001)
• [Publications] S.Kobayashi et al.: "Segregation and Diffusion of Phosphorus from Doped Si_<1-x>Ge_x Films into Silicon"J.Appl.Phys.. 86,10. 5480-5483 (1999)
• [Publications] T.Seino et al.: "Contribution of Radicals and lons in Atomic-Order Plasma Nitridation of Si"Appl.Phys.Lett.. 76,3. 342-344 (2000)
• [Publications] P.Han et al.: "Observation of Sharp Current Peaks in Resonant Tunneling Diode with Strained Si_<0.6>Ge_<0.4>/Si(100)Grown by Low-Temperature Low-Pressure CVD"J.Crystal Growth. 209,2-3. 315-320 (2000)
• [Publications] A.Ichikawa et al.: "Epitaxial Growth of Si_<1-x-y>Ge_xC_y Film on Si(100) in a SiH_4-GeH_4-CH_3SiH_3 Reaction"Thin Solid Films. (accepted).
• [Publications] S.Kobayashi et al.: "Diffusion and Segregation of Impurities from Doped Si_<1-x>Ge_x Films Silicon"Thin Solid Films. (accepted).
• [Publications] T.Tsuchiya et al.: "Drain Leakage Current and Instability of Drain Current in Si/Si_<1-x>Ge_x MOSFETs"Thin Solid Films. (accepted).
• [Publications] J.Murota et al.: "SiGe Processing and its Application in MOS Devices"Abs.of the 1st Microelectronics Workshop. 30-31 (1999)
• [Publications] J.Murota et al.: "Atomically Controlled Processing for Si-Based Ultrasmall Devices"Ext.Abs.of 18th Symposium on Future Electron Devices. 65-70 (1999)
• [Publications] T.Kikuchi et al.: "Super Self-Aligned Processing for Sub 0.1μm MOS Devices Using Selective Si_<1-x>Ge_x CVD"Proc.of the First International Symposium on ULSI Process Integration. PV99-18. 147-153 (1999)
• [Publications] T.Matsuura et al.: "Atomic-Order Side-Wall Passivation with Nitrogen in ECR Plasma Etching of Si"Proc.of the Plasma Etching Processes for Sub-Quarter Micron Devices. PV99-30(in press). (2000)
• [Publications] T.Kanetsuna et al.: "Surface Adsorption and Reaction of Chlorine on Impurity Doped Si Using an ECR Plasma"Abs.of 197th Meeting of the Electrochemical Society. (accepted). (2000)
• [Publications] Y.Yamamoto et al.: "Surface Adsorption of WF_6 on Si and SiO_2 in Selective W-CVD"Abs.of 197th Meeting of the Electrochemical Society. (accepted). (2000)
• [Publications] T.Noda et al.: "Doping and Electrical Characteristics of In Situ Heavily B-Doped Si_<1-x-y>Ge_xC_y Films Epitaxially Growth Using Ultraclean LPCVD"Abs.of 2000 Spring Meeting,The European Materials Research Society. (accepted). (2000)
• [Publications] Y.H.Song et al.: "A Novel Atomic Layer Doping Technology for Ultra-shallow Junction in Sub-0.1μm MOSFETs"Abs.of Technical Digest of Internal Electron Devices Meeting 1999. 505-508 (1999)
• [Publications] Y.H.Song et al.: "Ultrashallow Junction Formation by Rapid Thermal Annealing of Arsenic-Adsorbed Layer"Jpn.J.Appl.Phys.. 39,Part1,No.1. 26-30 (2000)