| Project/Area Number |
11305004
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (A)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
表面界面物性
|
|---|
| Research Institution | Nagoya University |
|---|
Principal Investigator |
GOTO Toshio Nagoya University, Graduate school of Eng., Professor, 工学研究科, 教授 (50023255)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
ITO Masafumi Wakayama University, Faculty of Systems Eng., Associate Professor, システム工学部, 助教授 (10232472)
HORI Masaru Nagoya University, Graduate school of Eng., Associate Professor, 工学研究科, 助教授 (80242824)
|
|---|
| Project Period (FY) |
1999 – 2001
|
| Project Status |
Completed (Fiscal Year 2001)
|
| Budget Amount *help |
¥10,310,000 (Direct Cost: ¥9,200,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2001: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2000: ¥5,500,000 (Direct Cost: ¥5,500,000)
|
|---|
| Keywords | plasma / electron temperature / radical / selective production / etching / CVD / process / gas phase reaction |
|---|
| Research Abstract |
We have achieved selective productions of radicals by combining feed gases and various plasma sources as follows ;
1. We have clarified that nitrogen radical density can be controlled through controlling the electron beam energy and current of electron-beam excited N_2 plasma, which is a promising high-density nitrogen radical source under ultra low operating pressures. Moreover, we have developed a novel compact EBEP source and applied to not only high-density radical sources but also to processes of diamond-like carbon deposition and surface cleaning of glass substrates. In the deposition process of diamond-like carbon, we have successfully synthesized the diamond-like carbon films on electrically floating substrates.
2. We have successfully synthesized nano-crystalline diamond at the low operating pressure of 1.3Pa for the first time by producing CH_3, H, and OH radicals selectively rather than C atoms and by controlling the ratio of neutral radicals to ionic radicals.
3. We have realized silane/hydrogen plasmas with very low electron temperature of 0.5 eV by using ultra-high frequency (UHF, 500MHz) power supply and found that the ratio of Si atom to H atom can be controlled by using pulse modulation of the plasma. Moreover, we have found that the crystallinity and orientation of deposited microcrystallin silicon film can be controlled by controlling Si/H atom ratio and SiH_3/H radical ratio.
4. We have found that the nitrogen atom density in UHF N_2/H_2/NH_3 plasma can be selectively enhanced compared to that in RF (13.56MHz) N_2/H_2/NH_3 plasma and realized the very fine anisotropic etching of low dielectric organic films.
|
