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Semiconductor devices by the use of new interfacial reactions and interfacial compounds.

Research Project

Project/Area Number 11355003
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section展開研究
Research Field 表面界面物性
Research InstitutionOsaka University

Principal Investigator

KOBAYASHI Hikaru  Osaka Univ. ISIR, Professor, 産業科学研究所, 教授 (90195800)

Co-Investigator(Kenkyū-buntansha) TODOKORO Yoshihiro  Matsushita Electric Industrial Co., Ltd., Councilor, 半導体事業部企画部, 主幹研究員
YONEDA Kenji  Matsushita Electric Industrial Co., Ltd., Project Manager, 主任研究員
TAKAHASHI Masao  Osaka Univ. ISIR, Associate Professor, 産業科学研究所, 助教授 (00188054)
Project Period (FY) 1999 – 2001
Project Status Completed (Fiscal Year 2001)
Budget Amount *help
¥32,580,000 (Direct Cost: ¥31,800,000、Indirect Cost: ¥780,000)
Fiscal Year 2001: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Fiscal Year 2000: ¥9,500,000 (Direct Cost: ¥9,500,000)
Fiscal Year 1999: ¥19,700,000 (Direct Cost: ¥19,700,000)
Keywordssilicon / SiO_2 / cyanide treatment / MOS / interface state / leakage current / Pt treatment / low energy electron impact / 欠陥準位 / Si-CN結合 / 白金触媒
Research Abstract

We have developed the following new semiconductor processes in order to improve the electrical characteristics of metal-oxide-semiconductor (MOS) diodes : 1) elimination of interface states at Si/SiO_2 interfaces by "cyanide treatment", 2) low temperature formation of Si/SiO_2 structure by the use of chemical methods, and 3) low tempertaure formation of Si/silicon oxynitride structure by the use of the low energy impact plasma method. In the case of 1), it has been found that interface states are eliminated by the selective reaction of cyanide ions with Si dangling bonds by the immersion of the Si/SiO_2 structure in KCN solutions. Si-CN bonds resulted from the cyanide treatment possess a high bond energy of 4.5 eV, leading to the thermal stability at 800℃ and the irradiation stability. It is found that contamination by K^+ ions can be completely prevented by the inclusion of crown-ether (C_<12>H_<24>O_6) in the KCN solutions. The leakage current is markedly decreased by the cyanide tre … More atment. In the case of 2), it is found that SiO_2 layers can be formed at 〜300 ℃ by the use of the catalytic activity of a platinum (Pt) layer. When the Pt treatment which involves the deposition of a Pt layer followed by the heat treatment at 〜300 ℃ in oxygen is performed on 〜2 nm SiO_2/Si structure, the density of the leakage current is decreased to 〜1/200. O^- ions produced by the catalytic activity of Pt are injected to SiO_2, leading to the passivation of defects and the formation of uniform SiO_2 layers. Methods of the fabrication of Si and SiC-based MOS diodes at 〜200 ℃ are developed by the use of perchloric acid. The fabricated MOS diodes possess low interface state densities even without hydrogen treatment. In the case of 3), a method of the formation of silicon oxynitride layers at 25〜450 ℃ is developed by the use of nitrogen plasma generated by the low energy impact method. Plasma damages introduced in the silicon oxynitride layers are found to be eliminated by the use of method 2) (i.e. Pt treatment). Less

Report

(4 results)
  • 2001 Annual Research Report   Final Research Report Summary
  • 2000 Annual Research Report
  • 1999 Annual Research Report
  • Research Products

    (55 results)

All Other

All Publications (55 results)

  • [Publications] T.Kubota: "Theoretical and spectroscopy studies of gap-states at ultrathin silicon oxide/silicon interfaces"J. Chem. Phys.. 111. 8136 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] A.Asano: "Dependence of interface states for ultrathin SiO_2/Si interfaces on the oxide atomic density determined from FTIR measurements"Surf. Sci.. 427-428. 219 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y.Yamashita: "Dependence of interface states in the Si band gap on oxide atomic density and interfacial roughness"Phys. Rev.. B59. 15872 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Mizokuro: "Mechanism of low temperature nitridation of silicon oxide layers by nitrogen plasma generated by low energy electron impact"J. Appl. Phys.. 85. 2921 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Kobayashi: "New spectroscopi method for the observation of semiconductor interface states and its application to MOS structure"Acta Phys. Slov.. 50. 461 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] J.Ivanco: "Unpinning of the Au/GaAs interfacial Fermi level by means of ultrathin undoped silicon interlayer inclusion"J. Appl. Phys.. 87. 795 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] E.Kanazaki: "Passivation of trap states in polycrystalline Si by cyanide treatments"Solid State Commun.. 113. 195-199 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Yuasa: "Reduction in leakage current density of Si-based metal-oxide-semiconductor structure by use of catalytic activity of a platinum overlayer"Appl. Phys. Lett.. 77. 4031 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Kobayashi: "Decrease in gap states at ultrathin SiO_2/Si interfaces by crown-ether cyanide treatment"Appl. Phys. Lett.. 77. 4392 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] J.Ivanco: "Reactivity of Au with ultrathin Si layers : A photoemission study"J. Appl. Phys.. 90. 345 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Sakurai: "SiC/SiO_2 interface states observed by x-ray photoelectron spectroscopy measurements under bias"Appl. Phys. Lett.. 86. 96 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Kobayashi: "Formation of a SiO_2/SiC structure at 203℃ by use of perchloric acid"Appl. Phys. Lett.. 78. 2336 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Sakurai: "Electrical properties of the silicon oxide/Si structure formed with perchloric acid at 203℃"Solid State Commun.. 118. 391 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Sakurai: "Low interface state density of SiC-based metal-oxide-semiconductor structure formed with perchloric acid at 203℃"Appl. Phys. Lett.. (submitted).

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] A.Asano: "Decrease in the leakage current density of Si-based metal-oxide-semiconductor diodes by cyanide treatment"Appl. Phys. Lett.. (submitted).

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] A.Asano: "Experimental and theoretical studies of Si-CN bonds to eliminate interface states at Si/SiO_2 interface"Chem. Mater.. (submitted).

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Sakurai: "SiC/SiO_2 structure formed at〜200℃ with heat treatment at 950℃ having excellent electrical characteristics"Jpn. J. Appl. Phys.. (in press).

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Kubota: "Theoretical and spectroscopy studies of gap-states at Urtrathin silicon oxide/silicon interfaces"J. Chem. Phys.. 111. 8136 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] A. Asano: "Dependence of interface states for ultrathin SiO_2/Si interfaces on the oxide atomic density determined from FTIR measurements"Surf. Sci.. 427-428. 219 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Yamashita: "Dependence of interface states in the Si band gap on oxide atomic density and interfacial roughness"Phys.Rev., Phys.Rev.. 15872 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Mizokuro: "Mechanism of low temperature nitridation of silicon oxide layers by nitrogen plasma generated by low energy electron impact"J.'Appl. Phys. 85. 2921 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Kobayashi: "New spectroscopi method for the observation of semiconductor interface states and its application to MOS structure"Acta Phys. Slov.. 50. 461 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] J. Ivanco: "Unpinning of the Au/GaAs interfacial Fermi level by means of ultrathin undoped silicon interlayer inclusion"J. Appl. Phys.. 87. 795 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] E. Kanazaki: "Passivation of trap states in polycrystalline Si by cyanide treatments"Solid State Commun.. 113. 195-199 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Yuasa: "Reduction in leakage current density of Si-based metal-oxide-semiconductor structure by use of catalytic activity of a platinum overlayer"Appl. Phys. Lett.. 77. 4031 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Kobayashi: "Decrease in gap states at ultrathin SiO_2/Si interfaces by crown-ether cyanide treatment"AppL Phys. Lett.. 77. 4392 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] J. Ivanco: "Reactivity of Au with ultrathin Si layers : A photoemission study"J. Appl. Phys.. 90. 345 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Sakurai: "SiC/SiO_2 interface states observed by x-ray photolectron spectroscopy measurements under bias"Appl. Phys. Lett.. 86. 96 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Kobayashi: "Formation of a SiO_2/SiC structure at 203 ℃ by use of perchloric acid"Appl. Phys. Lett.. 78. 2336 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Sakurai: "Electrical properties of the silicon oxide/Si structure formed with perchloric acid at 203 ℃"Solid State .Commun. 118. 391 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Sakurai: "Low interface state density of SiC-based metal-oxide-semiconductor structure formed with perchloric acid at 203℃"Appl. Phys. Lett.. (submitted to).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] A. Asano: "Decrease in the leakage current density of Si-based metal-semiconductor diodes by cyanide treatment"Appl. Phys. Lett.. (submitted to).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] A. Asano: "Experimental and theoretical studies of Si-CN bonds to eliminate interface states at Si/SiO_2 interface"Chem. Mater. (submitted to).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Sakurai: "SiC/SiO_2 structure formed at 〜200 ℃ with heat treatment at 950℃ having excellent electrical characteristics"Jpn. J. Appl. Phys. (in press).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Sakurai, M.Nishiyama, Y.Nishioka, H.Kobayashi: "Electrical properties of the silicon oxide/si stnictve formed with perchlonic acid at 203℃"Solid State Communications. 118. 391-394 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Sakurai, J.W.park, Y.Nishioka, M.Nishiyama, H.Kobayashi: "SiC/SiO_2 Stnicture formed at 〜200℃ with heat treazment at 950℃ haug excellent electrical characteristics"Jpn. J. Appl. Phys.. (印刷中). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] H.Kobayashi, N.fujiwara, D.Ninobe, O.Maida, M.takahashi: "Complete prevention of photo-degradation of amorphous si films by crown-ether oyanide treatment"Proceadings of the 17th European Photovoltaic Solar Energy Conterence and Exhibizion. (印刷中). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] M.takahashi, A.Asano, O.Maida, H.Kobayashi: "Improvement of polycrystalline si-based solar cells characheristics by cyanide treazment"Proceedings of the 17th European Photovoltaic Solar Energy Conterence and Exhibizion. (印刷中). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] O.Maida, T.fujinaga, M.Takahashi, H.Kobayashi: "Improvement of amorphous silicon PIN junction solar cell characteristics by crown-ether cyanide treazment"Proceedings of the 17th European Photovoltaic Solar Energy Conterence and Exhibizion. (印刷中). (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Sakurai, J.W.park, Y.Nishioka, M.Nishiyama, H.Kobayashi: "SiC/SiO_2 Stnicture formed at 〜200℃ with excellent electrical characteristics"Extended Abstracts of the 2001 International Conterence on Solid State Devices and Materials. 354-355 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] E.Kanazaki: "Passivation of trap states in polycry stalline Siby cyanide treatments"Solid State Commun.. 113. 195-199 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] J.Ivanco: "Unpinning of the Au/GaAs interfacial Fermi level by means of ultrathin undoped silicon interlayer in clusion"J.Appl.Phys. 87. 795-800 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] H.Kobayashi: "New spectroscopic method for observation of semi-conductor interface states and its application to MOS structure"Acta Physica Slov.. 50. 461-475 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] H.Kobayashi: "Decrease in gap states a ultrathin SiO_2/Si interfaces by crown-ether cyanide treatment"Appl.Phys.Lett.. 77. 4392-4294 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] E.Rokuta: "Low leakage current characteristics of YMnO_3 on Si (III) using an ultrathin buffer layer of silicon oxynitride"J.Appl.Phys.. 88. 6598-6604 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Sakurai: "Sic/SiO_2 interface states observed by x-ray photoelectron spectroscopy measurements under bias"Appl.Phys.Lett.. 86. 96-98 (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] H.Kobayashi: "Formation of SiO_2/Sic structure at 203℃ by use of perchloric acid"Appl.Phys.Lett.. 86. (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] 小林光: "界面、欠陥制御とソーラセル"マテリアルインテグレーション. 13. 37-43 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] H.Kobayashi: "New spectroscopic method for the observation of semiconductor interface states and its application to MOS structure"The Workshop of Solid State Surfaces and Interfaces II. 4 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] E.Kanazaki: "Passivation of top states in polycrystalline Si by cyanide treatments"Solid State Communications. 113. 195-199 (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] T.Kubota: "Theoretical and spectrascopic studies of gap-states at ultrathin silicon oxide/silicon interfaces"Journal of Chemical Physics. 111(17). 8136-8143 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] A.Asano: "Dependence of interface states for ultra-thin SiO_2/Si interfaces on the oxide atomic density determined from FTIR measurements"Surface Science. 427-428. 219-223 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] J.Ivanco: "Unpinning of Au/GaAs interfacial Fermi level by means of ultra thin undoped silicon interlayer inclusion"Journal of Applied Physics. 87(2). 795-800 (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] 小林 光: "半導体の界面準位の分光学的な観測方法と準位密度の低減"表面科学. 20(4). 279-287 (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] 小林 光: "シリコン材料の界面制御と半導体デバイスの高性能化"金属. 69(11). 958-965 (1999)

    • Related Report
      1999 Annual Research Report

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Published: 1999-04-01   Modified: 2016-04-21  

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