| Project/Area Number |
11355014
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
ODA Shunri Tokyo Institute of Technology, Research Center for Quantum Effect Electronics, Professor, 量子効果エレクトロニクス研究センター, 教授 (50126314)
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| Co-Investigator(Kenkyū-buntansha) |
SHIMADA Toshikazu Hitachi Central Research Lab, Researcher, 中央研究所, 企画室長
TSUCHIYA Yoshishige Tokyo Institute of Technology, Research Center for Quantum Effect Electronics, Research Associate, 量子効果エレクトロニクス研究センター, 助手 (80334506)
畑谷 成郎 東京工業大学, 量子効果エレクトロニクス研究センター, 助手 (90302942)
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| Project Period (FY) |
1999 – 2001
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| Project Status |
Completed (Fiscal Year 2001)
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| Budget Amount *help |
¥36,130,000 (Direct Cost: ¥34,000,000、Indirect Cost: ¥2,130,000)
Fiscal Year 2001: ¥9,230,000 (Direct Cost: ¥7,100,000、Indirect Cost: ¥2,130,000)
Fiscal Year 2000: ¥13,400,000 (Direct Cost: ¥13,400,000)
Fiscal Year 1999: ¥13,500,000 (Direct Cost: ¥13,500,000)
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| Keywords | nanocrystalline silicon / pulsed plasma processing / interface / nano-technology / single electron tunneling / single electron memory / ballistic transport / surface electron emitter |
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| Research Abstract |
A novel man-made material, NeoSilicon, is proposed. In NeoSilicon, both particle size and interparticle distance of nanocrystalline silicon quantum dots are precisely controlled. New functions in electron transport, photon emission and electron emission are expected due to quantum effect at room temperature and large interaction between dots. The bandgap is determined by the particle size. The conductivity is controlled mainly by tunneling distance. The transport characteristics are also controlled by charge quantization effect.
NeoSilicon is expected to be widely applicable to the key devices in electronics, including ultra-large-scale-integrated circuits, thin-film-transistors for liquid crystal displays and solar cells. Moreover, new field in electronics by using single electron devices, light emitting diodes, laser diodes, flat field-emission-devices and quantum cellular automata would be realized by NeoSilicon.
In order to implement NeoSilicon, precise control of particle size of 3-
… More
5 nm and interparticle distance of 1-2 nm is essential. Using pulsed plasma processes, we have successfully prepared nanocrystalline silicon particles of 8 nm in diameter with size dispersion of 1nm, whose surfaces are covered by naturally formed oxide of 1.5 nm thickness. Major challenges include reduction of particle size by means of variation of pulsed-plasma processing conditions. Direct nitridation would be a promising method for the formation of tunneling barrier, since lower barrier height for nitride allows larger tunneling probability and self-limiting mechanism of nitride formation provides high accuracy control of interparticle distance.
Electrical properties of nanocrystalline silicon particles have been investigated by employing nanoscale electrodes, both planar and vertical configurations, prepared by electron-beam lithography. Coulomb blockade and Coulomb oscillations predominantly due to a single quantum dot are readily modeled as well as interactions of electrons between neighboring dots. Less
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