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Fabrication and Optical Characterization of Assembled Semiconductor Nanocrystals

Research Project

Project/Area Number 11440095
Research Category

Grant-in-Aid for Scientific Research (B).

Allocation TypeSingle-year Grants
Section一般
Research Field 固体物性Ⅰ(光物性・半導体・誘電体)
Research InstitutionNARA INSTITUTE OF SCIENCE AND TECHNOLOGY

Principal Investigator

KANEMITSU Yoshihiko  Nara Institute of Science and Technology, Associate Professor, 物質創成科学研究科, 助教授 (30185954)

Project Period (FY) 1999 – 2000
Project Status Completed (Fiscal Year 2000)
Budget Amount *help
¥5,900,000 (Direct Cost: ¥5,900,000)
Fiscal Year 2000: ¥5,900,000 (Direct Cost: ¥5,900,000)
KeywordsNanocrystals / Nanoparticles / Ion Implantation / Laser Spectroscopy / Hole Burning / Silicon / Compound Semiconductors / Quantum Dots / シリコンナノクリスタル / 半導体微粒子 / 赤外発光
Research Abstract

We have fabricated assembled semiconductor nanocrystals by ion-implantation, colloid, and vacuum-deposition techniques and studied their optical properties. The a-Si/SiO_2 multilayer structures on (001) Si substrates were formed by an electron beam deposition technique. The size dependence of the luminescence spectrum and lifetime showed that high-quality two-dimensional a-Si layers were formed between SiO_2 layers. After thermal annealing of a-Si/SiO_2 multilayers, arranged Si nanocrystals were formed between SiO_2 layers and the size of Si nanocrystals were determined by the thickness of the a-Si layer. The Ge nanocrystals samples were synthesized by multi-energy or low-energy ion-implantation techniques. This multi-energy ion implantation gave a uniform Ge concentration profile in SiO_2 glasses. The transmission electron microscopy (TEM) observations showed that the size fluctuation of Ge nanocrystals was very small. In addition, the low-energy ion implantation produced Ge nanocrystal in the very narrow region in SiO_2 matrices. The TEM observation showed that the Ge nanocrystals were lined up near the surface. The size fluctuation of nanocrystals in this work is much smaller than that of prepared by conventional ion-implantation and rf co-sputtering techniques. Moreover, we have developed new fabrication methods of compound semiconductor nanocrystals in SiO_2 or Al_2O_3 films by sequential ion implantation. ZnS and CdS nanocrystals in Al_2O_3 matrices were faced and aligned with the Al_2O_3 lattice. In GaAs, ZnS, and CdS nanocrystals, efficient photoluminescence due to free excitons appeared near the absorption edge. Spectroscopic analysis showed that high-quality compound semiconductor nanocrystals were formed by sequential ion implantation techniques. It is demonstrated that ion implantation synthesis is one of the most versatile methods for the fabrication of assembled semiconductor nanocrystals.

Report

(3 results)
  • 2000 Annual Research Report   Final Research Report Summary
  • 1999 Annual Research Report
  • Research Products

    (42 results)

All Other

All Publications (42 results)

  • [Publications] Y.Kanemitsu: "Excitons in Silicon Quantum Structures"Journal of Luminescence. 83/84. 283-290 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kanemitsu: "Photoluminescence from GaAs Nanocrystals"Journal of Luminescence. 83/84. 301-304 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kanemitsu: "GaAs Nanocrystals Fabricated by Sequential Ion Implantation : Structural and Luminescence Properties"Physica E. 7. 322-325 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kanemitsu: "Visible Luminescence from Si/SiO_2 Quantum Wells and Dots : Confinement and Localization of Excitons"Physica E. 7. 456-460 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kanemitsu: "Photoluminescence Properties of Porous a-Si"Journal of Luminescence. 87-89. 460-462 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kanemitsu: "Visible luminescence from GaAs Nanocrystals Fabricated by Sequential Ion Implantation"Journal of Luminescence. 87-89. 432-434 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kanemitsu: "Photoluminescence Dynamics of a-Si/SiO_2 Quantum Wells"Journal of Luminescence. 87-89. 463-465 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kanemitsu: "Near-Infrared Photoluminescence from Ge Nanocrystals in SiO_2 Matrices"Journal of Luminescence. 87-89. 457-459 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kanemitsu: "Photoluminescence Dynamics of a-Si/SiO_2 Quantum Wells"Applied Physics Letters. 76. 2200-2202 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kanemitsu: "Decay Dynamics of Visible Luminescence in Amorphous Silicon Nanoparticles"Applied Physics Letters. 77. 211-213 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kanemitsu: "Visible Light Emission from GaAs Nanocrystals in SiO_2 Films Fabricated by Sequential Ion Implantation"Physical Review B. 62. 5100-5108 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kanemitsu: "Excitonic Properties of Silicon Nanoparticles"Trans.MRS-J. 25. 933-938 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] D.Matsuura: "Optical Characterization of CdS Nanocrystals in Al_2O_3 Matrices Fabricated by Ion-Beam Synthesis"Applied Physics Letters. 77. 2289-2291 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kanemitsu: "Size Effects on the Luminescence Spectrum in Amorphous Si/SiO_2 Multilayer Structures"Applied Physics Letters. 77. 3550-3552 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] D.Matsuura: "Photoluminescence Dynamics of CdS Nanocrystals Fabricated by Sequential Ion Implantation"Japanese Journal of Applied Physics. 40(印刷中). (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kanemitsu: "Excitons in Silicon Quantum Structures"J.Luminescence. 83/84. 283-290 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kanemitsu: "Photoluminescence from GaAs Nanocrystals"J.Luminescence. 83/84. 301-304 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kanemitsu: "GaAs Nanocrystals Fabricated by Sequential Ion Implantation : Structural and Luminescence Properties"Physica E.. 7. 322-325 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kanemitsu: "Visible Luminescence from Si/SiO_2 Quantum Wells and Dots : Confinement and Localization of Excitons"Physica E.. 7. 456-460 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kanemitsu: "Photoluminescence Properties of Porous a-Si"J.Luminescence. 87-89. 460-462 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kanemitsu: "Photoluminescence Spectrum of c-Si/SiO_2 and a-Si/SiO_2 Quantum Wells"J.Luminescence. 87-89. 463-465 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kanemitsu: "Visible luminescence from GaAs Nanocrystals Fabricated by Sequential Ion Implantation"J.Luminescence. 87-89. 432-434 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kanemitsu: "Near-Infrared Photoluminescence from Ge Nanocrystals in SiO_2 Matrices"J.Luminescence. 87-89. 457-459 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kanemitsu: "Photoluminescence Dynamics of a-Si/SiO_2 Quantum Wells"Appl.Phys.Lett.. 76. 2200-2202 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kanemitsu: "Decay Dynamics of Visible Luminescence in Amorphous Silicon Nanoparticles"Appl.Phys.Lett.. 77. 211-213 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kanemitsu: "Visible Light Emission from GaAs Nanocrystals in SiO_2 Films Fabricated by Sequential Ion Implantation"Phys.Rev.B. 62. 5100-5108 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kanemitsu: "Excitonic Properties of Silicon Nanoparticles"Trans.. MRS-J 25. 933-938 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] D.Matsuura: "Optical Characterization of CdS Nanocrystals in Al_2O_3 Matrices Fabricated by Ion-Beam Synthesis"Appl.Phys.Lett.. 77. 2289-2291 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kanemitsu: "Size Effects on the Luminescence Spectrum in Amorphous Si/SiO_2 Multilayer Structures"Appl.Phys.Lett.. 77. 3550-3552 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] D.Matsuura: "Photoluminescence Dynamics of CdS Nanocrystals Fabricated by Sequential Ion Implantation"Jpn.J.Appl.Phys.. 40 (in press). (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Kanemitsu: "Size Effects on the Luminescence Spectrum in a-Si/SiO2 Multilayer Structures"Applied Physics Letters. 77. 3550-3552 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] D.Matsuura: "Photoluminescence Dynamics of CdS Nanocrystals Fabricated by Sequential Ion Implantation."Japanese Journal of Applied Physics. 40(印刷中). (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.Kanemitsu: "Excitonic Properties of Silicon Nanoparticles"Transactions of the Materials Research Society of Japan. 25. 933-938 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] D.Matsuura: "Optical Characterization of CdS Nanocrystals in Al2O3 Matrices Fabricated by Ion-Beam Synthesis"Applied Physics Letters. 77. 2289-2291 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.Kanemitsu: "Visible Light Emission from GaAs Nanocrystals in SiO2 Films Fabricated by Sequential Ion Implantation"Physical Review B. 62. 5100-5108 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.Kanemitsu: "Decay Dynamics of Visible Luminescence in Amorphous Silicon Nanoparticles"Applied Physics Letters. 77. 211-213 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.Kanemitsu: "Near-Infrared Photoluminescence from Ge Nanocrystals in SiO2 Matrices"J.Luminescence. 87-89. 457-459 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.Kanemitsu: "Photoluminescence Dynamics of a-Si/SiO2 Quantum Wells"Applied Physics Letters. 76. 2200-2202 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.Kanemitsu: "GaAs Nanocrystals Fabricated by Sequential Ion Implantation : Structural and Luminescence Properties"Physica E. 7. 322-325 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.Kanemitsu: "Visible Luminescence from Si/SiO_2 Quantum Wells and Dots : Confinement and Localization of Excitons"Physica E. 7. 456-460 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.Kanemitsu: "Photoluminescence properties of porous a-Si"J.Luminescence. 87-89. 460-462 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.Kanemitsu: "Visible luminescence from GaAs Nanocrystals Fabricated by Sequential Ion Implantation"J.Luminescence. 87-89. 432-434 (2000)

    • Related Report
      2000 Annual Research Report

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Published: 2000-04-01   Modified: 2020-05-15  

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