• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Metal-Insulator Transition in Neutron Transmutation Doped Ge

Research Project

Project/Area Number 11440117
Research Category

Grant-in-Aid for Scientific Research (B).

Allocation TypeSingle-year Grants
Section一般
Research Field 固体物性Ⅱ(磁性・金属・低温)
Research InstitutionKeio University

Principal Investigator

ITOH Kohei  Keio University, Dept.Applied Physics, Assistant Professor, 理工学部, 講師 (30276414)

Co-Investigator(Kenkyū-buntansha) OOTSUKA Yoichi  Tsukuba Univ.Dept.Physics, Professor, 物理学系, 教授 (50126009)
Project Period (FY) 1999 – 2000
Project Status Completed (Fiscal Year 2000)
Budget Amount *help
¥4,500,000 (Direct Cost: ¥4,500,000)
Fiscal Year 2000: ¥4,500,000 (Direct Cost: ¥4,500,000)
KeywordsSemiconductors / metal-Insulator Transition / Low Temperature Physics
Research Abstract

We report on the scaling analysis of the low temperature (T=0.02-1 K) electronic conductivity σ with and without magnetic fields in order to determine the critical exponents μ, μ', s, and ν of the conductivity without magnetic fields, conductivity with magnetic fields, dielectric constant, and localization length, respectively. Two series of Ge : Ga samples, one that is nominally uncompensated and the other with the compensation ratio 0.32, have been employed. For the uncompensated series of samples, Ga concentration N of the range 0.90N_c<N<1.40N_c with the special focus on the region 0.99N_c<N<1.01N_c where N_c is the critical concentration for MIT has been studied in detail.
We have obtained for the uncompensated series μ【approximately equal】0.5 for N>1.01N_c μ【approximately equal】1.1 for 0.99N_c<N<1.01N_c, and μ'【approximately equal】1.1 for all N and for applied fields B>4T using the finite temperature scaling of the forms σ (N,T) ∝ T^xf (N-N_c/T^y), σ (N, T, B=const.) ∝ T^<x'>f (N-N_c/T^y) and σ (N=const., T, B) ∝ T^<x'>f (B_c-B/T^y) with μ=x/y and μ'=x'/y'. The resistivity ρ of the insulating samples has been analyzed in the framework of Efros-Shklovskii's variable range hopping theory and the relation ρ^∝T^<1/3>exp(T_0/T)^<1/2> has been found for all samples. A further analysis with magnetic fields has lead to determination of critical exponents ν【approximately equal】0.33 and s【approximately equal】0.62 for N<0.99N_c, and ν【approximately equal】1.2 and s【approximately equal】2.3 for 0.99N_c<N<N_c, i.e., Wegner's scaling law μ【approximately equal】ν holds only for the small region ±1% of N_c. Comparison of these results with that of the compensated series demonstrates unambiguously that the special features of the small region, ±1% of N_c in nominally uncompensated series appear due to an extremely small level of compensation (less than 0.1%) that unavoidably presents in the samples, i.e., the width of the critical region changes as a function of the compensation.

Report

(3 results)
  • 2000 Annual Research Report   Final Research Report Summary
  • 1999 Annual Research Report
  • Research Products

    (31 results)

All Other

All Publications (31 results)

  • [Publications] 伊藤公平: "Metal-Insulator Transition in Doped Semiconductors"25the Proceeding of the International Conference of Physics of Seminonductors. (印刷中).

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 渡部道生,伊藤公平,大塚洋一,Eugene E.Haller: "Localization Length and Impurity Dielectric Susceptibility in the Critical Regime of the Metal-Insulator Transition in Homogenously Doped P-Type 1"Phys.Rev.B. 62. R2255-R2258 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 伊藤公平: "Varible Range Hopping Conduction in Neutron- Transmutation- Doped ^<70> Ge : Ga"Phys.Stat.Sol.(b). 218. 211-216 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 渡部道生,伊藤公平,大塚洋一,E.E.Haller: "Metal-Insulator Transition of NTD ^<70> Ge : Ge in Magnetic Field"Physica B. 284-288. 1677-1678 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 伊藤公平,渡部道生,大塚洋一,E.E.Haller: "Scaling Analysis of the Low Temperature Conductivity in Neutron- Transmutation- Doped ^<70> Ge : Ga"Ann.Phys.(Leipzig). 8. 631-637 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 渡部道生,伊藤公平,大塚洋一,E.E.Haller: "Critical Exponent for Localization Length in Neutron- Transmutation- Doped ^<70> Ge : Ga"Ann.Phys.(Leipzig). 8. 273-276 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 渡部道生,伊藤公平,大塚洋一,E.E.Haller: "Metal-Insulator Transition of Isotopically Enriched Neutron- Transmutation- Doped ^<70> Ge : Ga in Magnetic Fields"Phys.Rev.B. 60. 15817-15823 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 伊藤公平,渡部道生,大塚洋一: "Ge:Gaにおける金属-絶縁体転移"日本物理学会誌. Vol.54 No.3. 205-208 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 大槻東巳,伊藤公平,Keith Slevin: "アンダーソン転移の理論と実験の現状"固体物理. Vol.34.No.5. 301-308 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.M.Itoh: "Metal-Insulator Transition in Doped Semiconductors"Proceeding of the 25^<th> International Conference on Physics of Semiconductors. (in press).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Michio Watanabe, Kohei M.Itoh, Youiti Ootuka, Eugene E.Haller: "Localization Length and Impurity Dielectric Susceptibility in the Critical Regime of the Metal-Insulator Transition in Homogeneously Doped P-Type Ge"Phys.Rev.B. 62. R2255-R2258 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.M.Itoh: "Variable Range Hopping Conduction in Neutron-Transmutation-Doped ^<70>Ge : Ga"Phys.Stat.Sol.(b). 218. 211-216 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.M.Itoh, M.Watanabe, Y.Ootuka, and E.E.Haller: "Scaling Analysis of the Low Temperature Conductivity in Neutron-Transmutation-Doped ^<70>Ge : Ga"Ann.Phys.(Leipzig). 8. 631-637 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] M.Watanabe, K.M.Itoh, Y.Ootuka, and E.E.Haller: "Critical Exponent for Localization Length in Neutron-Transmutation-Doped ^<70>Ge : Ga"Ann.Phys.(Leipzig). 8, Spec.Issue. SI-3-SI-9,273-276 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] M.Watanabe, K.M.Itoh, Y.Ootuka, and E.E.Haller: "Metal-Insulator Transition of Isotopically Enriched Neutron-Transmutation-Doped ^<70>Ge : Ga in Magnetic Fields"Phys.Rev.B. 60. 15817-15823 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] M.Watanabe, K.M.Itoh, Y.Ootuka, and E.E.Haller: "Metal-Insulator Transition of NTD ^<70>Ge : Ge in Magnetic Field"Physica B. 284-288. 1677-1678 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Ohtsuki, K.M.Itoh, and K.Slevin: "Review of Recent Theory and Experiments on Anderson Transition"Solid State Physics. 34(invited article in Japanese). 301-308 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.M.Itoh, M.Watanabe, and Y.Ootuka: "Metal-Insulator Transition in Ge : Ga"Butsuri. 54 (invited article in Japanese). 205-208 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 伊藤公平: "Metal-Insulator Transition in Doped Semiconductors"25th Proceeding of the International Conference of Physics of Seminonductors. (印刷中).

    • Related Report
      2000 Annual Research Report
  • [Publications] 渡部道生,伊藤公平,大塚洋一,Engene E.Haller: "Localization Length and Impurity Dielectric Susceptibility in the Critical Regime of the Metal-Insulator Transition in Homogeneously Doped P-Type C"Phys.Rev.B. 62. R2255-R2258 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 伊藤公平: "Varible Range Hopping Conduction in Neutron-Transmutation Doped ^<70>Ge : Ga"Phys.Stat, Sol.(b). 218. 211-216 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 渡部道生,伊藤公平,大塚洋一,E.E.Haller: "Metal-Insulator Transition of NTD ^<70>Ge : Ge in Magnetic Field"Physica B. 284-288. 1677-1678 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 伊藤公平,渡部道生,大塚洋一,E.E.Haller: "Sealing Analysis of the Low Temperature Conductivity in Neutron-Transmutation-Doped ^<70>Ge : Ga"Ann.Phys.(Leipzig). 8. 631-637 (1999)

    • Related Report
      2000 Annual Research Report
  • [Publications] 渡部道生,伊藤公平,大塚洋一,E.E.Haller: "Critical Exponent for Localization Length in Neutron-Transmutation-Doped ^<70>Ge : Ga"Ann.Phys.(Leipzig). 8. 273-276 (1999)

    • Related Report
      2000 Annual Research Report
  • [Publications] 渡部道生,伊藤公平,大塚洋一,E.E.Haller: "Metal-Insulator Transition of Isotopically Enriched Neutron-Transmutation-Doped ^<70>Ge : Ga in Magnetic Fields"Phys.Rev.B. 60. 15817-15823 (1999)

    • Related Report
      2000 Annual Research Report
  • [Publications] 伊藤公平,渡部道生,大塚洋一: "Ge:Gaにおける金属-絶縁体転移"日本物理学会誌. Vol.54 No.3. 205-208 (1999)

    • Related Report
      2000 Annual Research Report
  • [Publications] 大槻東巳,伊藤公平,Keith Slevin: "アンダーソン転移の理論と実験の現状"固体物理. Vol34 No.5. 301-308 (1999)

    • Related Report
      2000 Annual Research Report
  • [Publications] M.Watanabe et al.: "Metal-Insulator Transition of Isotopically Enriched Neutron-Transmutation-Doped ^<70>Ge:Ga in Magnetic Fields."Physical Review B. 60・23. 15817-15823 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] K.M.Itoh et al.: "Scaling Analysis of the Low Temperature Conductivity in Neutron-Transmutation-Doped ^<70>Ge:Ga"Annalen der Physik. 8・7-9. 631-637 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] M.Watanabe et al.: "Critical Exponent for Localization Length in Neutron-Transmutation-Doped ^<70>Ge:Ga"Annalen der Physik. 8・SI. 273-276 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] K.M.Itoh: "Variable Range Hopping Conduction in Neutron-Transmutation-Doped ^<70>Ge:Ga"Physica Status Solidi. (印刷中).

    • Related Report
      1999 Annual Research Report

URL: 

Published: 2000-04-01   Modified: 2020-05-15  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi