| Project/Area Number |
11450003
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | The University of Tokyo |
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Principal Investigator |
ONABE Kentaro ONABE,Kentaro, 大学院・新領域創成科学研究科, 教授 (50204227)
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| Co-Investigator(Kenkyū-buntansha) |
KOH Shinji The University of Tokyo, Graduate School of Engineering, Research Associate, 大学院・工学系研究科, 助手 (50323663)
SHIRAKI Yasuhiro The University of Tokyo, Graduate School of Engineering, Professor, 大学院・工学系研究科, 教授 (00206286)
KATAYAMA Ryuji The University of Tokyo, Graduate School of Frontier Sciences, Research Associate, 大学院・新領域創成科学研究科, 助手 (40343115)
呉 軍 東京大学, 大学院・新領域創成科学研究科, 助手 (80313005)
宇佐美 徳隆 東京大学, 先端科学技術研究センター, 助手 (20262107)
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| Project Period (FY) |
1999 – 2002
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| Project Status |
Completed (Fiscal Year 2002)
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| Budget Amount *help |
¥15,200,000 (Direct Cost: ¥15,200,000)
Fiscal Year 2002: ¥3,100,000 (Direct Cost: ¥3,100,000)
Fiscal Year 2001: ¥3,400,000 (Direct Cost: ¥3,400,000)
Fiscal Year 2000: ¥4,000,000 (Direct Cost: ¥4,000,000)
Fiscal Year 1999: ¥4,700,000 (Direct Cost: ¥4,700,000)
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| Keywords | diluted nitride alloy / GaAsN / InGaAsN / InGaPN / slloy semiconductors / huge bandgap bowing / MOVPE / RF-MBE / InAsN / 巨大バンドギャッブボウイング / GaNP / GaNAs / 有機金属気相成長 / 窒化物半導体 / 巨大ボウイング |
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| Research Abstract |
This research project has realized III-V-N type nitride alloy semiconductors such as GaAsN, GaPN, InAsN, GaAsPN, InGaAsN and InGaPN, with N concentrations far beyond the thermodynamic equilibrium limit using metal-organic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) as efficient epitaxial growth methods. Epitaxial growth conditions have been established for alloy layers with high structural and optical qualities which are reasonably applicable to devices. Structural properties such as compositional inhomogeneity and defects have been clarified in relation to N concentrations and growth conditions. It has been found that optical properties near the band edge are significantly affected by localized states which are originated by isolated or clustered N atoms at diluted N concentration regions. It has been found that huge bandgap bowing effect is a characteristic feature common in all the III-V-N type alloys. The bandgap bowing parameters have been established for each III-V-N ternary and quaternary alloy. Quantum-well structures involving III-V-N type alloys have been investigated, and shown that with a proper choice of heterostructure will give an efficient electron confinement to quantum wells due to higher band offsets.
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