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Study of chemical reaction and phenomena of heat and mass transfer during CZ-silicon crystal growth

Research Project

Project/Area Number 11450009
Research Category

Grant-in-Aid for Scientific Research (B).

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionFaculty of Education, Shinshu University

Principal Investigator

HOSHIKAWA Keigo  Faculty of Education, Shinshu University, Professor, 教育学部, 教授 (10231573)

Co-Investigator(Kenkyū-buntansha) OKANO Yasunori  Faculty of Eng., Shizuoka Univ., Associate Professor, 工学部, 助教授 (90204007)
Project Period (FY) 1999 – 2000
Project Status Completed (Fiscal Year 2000)
Budget Amount *help
¥14,800,000 (Direct Cost: ¥14,800,000)
Fiscal Year 2000: ¥4,100,000 (Direct Cost: ¥4,100,000)
Fiscal Year 1999: ¥10,700,000 (Direct Cost: ¥10,700,000)
KeywordsCZ-Silicon crystal growth / chemical reaction at high temperature / phenomenon of heat and mass transfer / silica crucible / Si melt / SiO gas / growth interface / dislocation-free crystal / CZ-Si結晶 / 熱物質移動現象 / 酸素移動現象 / 酸素溶解速度 / マラニユニー対流 / 蒸発速度係数
Research Abstract

Czochralski (CZ) silicon crystal growth technology for production of LSI substrates depends on much technique based on experimental trials and errors at Si maker for a long time. However, it is more necessary to approach and discuss scientifically the CZ-Si crystal growth for corresponding flexibly to more complex operation of crystal production. In the present study, the thermochemical reaction at high temperature and the phenomenorr of heat and mass transfer during CZ-Si crystal growth have been investigated, and we noticed the oxygen transport and the dislocation at growth interface. Typical results are as follows,
(1) Concerning the interface of silica glass/Si melt, a new method called drop method is proposed for understanding oxygen transportation process in the CZ-Si crystal growth. Dissolution rate of silica glass in Si melt is precisely measured using the drop method and can be obtained almost one order larger than that obtained from the conventional measurement.
(2) SiO vapor pressure concerning CZ-Si crystal growth is measured by an SiO_2 glass/Si melt/SiO gas equilibrium system. It is found that the dependence of the SiO vaper pressure on temperature is good agreement with the calculated results using some thermochemical data.
(3) It is found that no dislocations due to both thermal shock and lattice misfit form at a seed/grown crystal interface using a seed with 1〜7x10^<18> atoms/cm^3 of B concentration. So, dislocation-free CZ-Si crystal growth without Dash necking is proposed using the heavily B-doped Si seed.

Report

(3 results)
  • 2000 Annual Research Report   Final Research Report Summary
  • 1999 Annual Research Report
  • Research Products

    (41 results)

All Other

All Publications (41 results)

  • [Publications] Xinming Huang: "Expansion Behavior of Bubble in Silica Glass Concerning Czochralski (CZ) Si Growth"Japanese Journal of Applied Physics. 38. L353-355 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Susumu Sakai: "Development of Sessile Drop Method Concerning Czochralski (CZ) Si Crystal Growth"Japanese Journal of Applied Physics. 38. 1847-1851 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Xinming Hunag: "SiO Vapor Pressure in an SiO_2 Glass/Si Melt/SiO Gas Equilibrium System"Japanese Journal of Applied Physics. 38. L1153-1155 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 黄新明: "CZ-Si結晶成長における石英の溶解および酸素の偏析"Japanese Journal of Applied Physics. 26. 226-234 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Keigo Hoshikawa: "Dislocation-Free Czochralski Silicon Crystal Growth without the Dislocation-Elimination-Necking Process"Japanese Journal of Applied Physics. 38. L1369-L1371 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Toshinori Taishi: "Dislocation-free Czochralski Si Crystal Growth without the Dash-Necking Process : Growth from Undoped Si melt"Japanese Journal of Applied Physics. 39. L192-L194 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.Hoshikawa: "Oxygen transportation during Czochralski silicon crystal growth"Material Science and Engineering. B72. 73-79 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Xinming Huang: "In situ observation of the Si melt-silica glass interface concerning CZ-Si crystal growth"Materials Science and Engineering. B72. 164-168 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Xinming Huang: "In situ observation of the interfacial Phase Formation at Si Melt/Silica Glass Interface"Japanese Journal of Applied Physics. 39. 3281-3285 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Xinming Huang: "Dislocation-Free B-Doped Si Crystal Growth without the Dash-Necking Process in the Czochralski Method : Influence of the B concentration"Journal of Crystal Growth. 213. 283-287 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Xinming Huang: "Dislocation-Free Si Crystal Growth without the Dash-Necking Process Using Hevily B-Doped and Ge-Doped Seeds"Japanese Journal of Applied Physics. 39. L1115-L1117 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Xinming Huang: "Dislocation-Free Czochralski Silicon Crystal Growth without Dash Necking"Japanese Journal of Applied Physics. 40. 12-17 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Keiji Yamahara: "Investigation on the surface of silica glass reacting with silicon melt : Effect of raw materials for silica crucible"Japanese Journal of Applied Physics. (in printing). (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 干川圭吾: "現代エレクトロニクスを支える単結晶成長技術"培風館. 55-73 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 干川圭吾: "実験物理学講座 試料作製技術(小間篤編)"丸善. 29-55 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 酒井奨: "化学工学シンポジウムシリーズ"化学工学会. 37-43 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] X.Huang, H.Kishi, S.Oishi, H.Watanabe, K.Sanpei, S.Sakai and K.Hoshikawa: "Expansion Behavior of Bubble in Silica Glass Concerning Czochralski (CZ) Si Growth"Japanese Journal of Applied Physics. 38. L353-355 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] S.Sakai, X.Huang, Y.Okano and K.Hoshikawa: "Development of Sessile Drop Method Concerning Czochraleki (CZ) Si Crystal Growth"Japanese Journal of Applied Physics. 38. 1847-1851 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] X.Huang, K.Terashima and K.Hoshikawa: "SiO Vapor Pressure in an SiO_2 Glass/Si Melt/SiO Gas Equilibrium System"Japanese Journal of Applied Physics. 38. L1153-L1155 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] X.Huang and K.Hoshikawa: "Silica Dissolution and Oxygen Segregation Concerning CZ-Si Crystal Growth"Japanese Association for Crystal Growth. 26. 226-234 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.Hoshikawa, X.Huang, T.Taishi, T.Kajigaya and T.Iino: "Dislocation-Free Czochralski Silicon Crystal Growth without the Dislocation-Elimination-Necking Process"Japanese Journal of Applied Physics. 38. L1369-L1371 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Taishi, X.Huang, T.Fukami and K.Hoshikawa: "Dislocation-free Czochralski Si Crystal Growth without the Dash-Necking Process : Growth from Undoped Si melt"Japanese Journal of Applied Physics. 39. L192-L194 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.Hoshikawa and X.Huang: "Oxygen transporation during Czochralski silicon crystal growth"Material Science and Engineering. B72. 73-79 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] X.Huang, K.Yamahara and K.Hoshikawa: "In situ observation of the Si melt-silica glass interface concerning CZ-Si crystal growth"Material Science and Engineering. B72. 164-168 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] X.Huang, T.Wang, K.Yamahara, T.Taishi and K.Hoshikawa: "In situ observation of the Interfacial Phase Formation at Si Melt/Silica Glass Interface"Japanese Journal of Applied Physics. 39. 3281-3285 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] X.Huang, T.Taishi, I.Yonenaga and K.Hoshikawa: "Dislocation-Free B-Doped Si Crystal Growth without the Dash-Necking Process in the Czochralski Method : Influence of the B concentration"Journal of Crystal Growth. 213. 283-287 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] X.Huang, T.Taishi, I.Yonenaga and K.Hoshikawa: "Dislocation-Free Si Crystal Growth without the Dash-Necking Process Using Hevily B-Doped and Ge-Doped Seeds"Japanese Journal of Applied Physics. 39. L1115-L1117 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] X.Huang, T.Taishi, I.Yonenaga and K.Hoshikawa: "Dislocation-Free Czochralski Silicon Crystal Growth without Dash Necking"Japanese Journal of Applied Physics. 40. 12-17 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.Yamahara, X.Huang, A.Utsunomiya, S.Sakai, Y.Tsurita and K.Hoshikawa: "Investigation on the surface of silica glass reacting with silicon melt : Effect of raw materials for silica crucible"Japanese Journal of Applied Physics. (in printing). (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Keigo Hoshikawa: "Oxygen transportation daring Czochralski silicon crystal growth."Materiials Science and Engineering B.. B72. 73-79 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Xinming Huang: "In 〓 observation of the Simelt-silica glass interface concerning CZ-Si・crystal growth."Materials Science and Engineering B. B72. 164-168 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Toshimari Taishi: "Hearily boron-dopal Czochralski (CZ) silicon crystal grouwth : segregation and contitutionnal super cooling"Materials Science and Engineering B. B72. 169-172 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Xinming Huang: "Dislocation free B-doped Si crystal growth without Dash necking in Czochralski method : in fluence of B concentration"J.Crystal Growth.. 213. 283-287 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Toshimari Taishi: "Dislocation-free Czochralski Si Crystal Growth without the Dash-Necking process : Growth from Undoped Si melt."Jpn.J.Appli.Physics. 39. L191-L194 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Xinming Huang: "Dislocation-Free Czochralski : Silicon Crystal Growth without Dash Necking"Jpn.J.Appli ・ physics. 40. 12-17 (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] Susumu Sakai: "Development of a Sessile Drop Method Concerning Czochralski Si Crystal Growth."Jpn.J.Appl.Phys.. Vol38.No4A. 1845-1851 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] Xinmimg Huang: "Expansion Behavior of Bubbles is Silica Glass concerning Czochralski (CZ) Si Growth."Jpn.J.Appl.Phys.. Vol38.No4A. L353-L355 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] Xinming Huang: "SiO Vapor Pressure in an SiO_2 Glass/Si Melt/SiO Gas Equilibrium System."Jpn.J.Appl.Phys.. Vol38.No10B. L1153-L1155 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] Keigo Hoshikawa: "Dislocation-Free Czochralski Silicon Crystal Growth without the Dislocation-Elimination-Necking Process"Jpn.J.Appl.Phys.. Vol38.No12A. L1369-L1371 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 黄 新明: "CZ-Si結晶成長における石英の溶解および酸素の偏析"日本結晶成長学会誌. Vol26.No5. 226-234 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 干川圭吾: "現代エレクトロニクスを支える単結晶成長技術"日本学術振興会結晶成長の科学と技術第161委員会. 405 (1999)

    • Related Report
      1999 Annual Research Report

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Published: 1999-04-01   Modified: 2016-04-21  

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