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Fabrication of Functional Heteroepitaxial Layers Embedding Devices

Research Project

Project/Area Number 11450011
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionToyohashi University of Technology

Principal Investigator

YONEZU Hiroo  Toyohashi University of Technology, Faculty of Engineering, Professor, 工学部, 教授 (90191668)

Co-Investigator(Kenkyū-buntansha) OHSHIMA Naoki  Yamaguchi University, Faculty of Engineering, Lecturer, 工学部, 講師 (70252319)
FURUKAWA Yuzo  Toyohashi University of Technology, Faculty of Engineering, Research Associate, 工学部, 助手 (20324486)
Project Period (FY) 1999 – 2001
Project Status Completed (Fiscal Year 2001)
Budget Amount *help
¥12,500,000 (Direct Cost: ¥12,500,000)
Fiscal Year 2001: ¥3,300,000 (Direct Cost: ¥3,300,000)
Fiscal Year 2000: ¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 1999: ¥5,600,000 (Direct Cost: ¥5,600,000)
Keywordshetero-epitaxy / lattice-mismatch / lattice-matching / dislocation-free / III-V-N compound semiconductor / GaPN / GaAsPN / GaAs-on-Si / GaAsN / 量子井戸構造 / ダブルヘテロ構造 / 光電子融合集積回路 / 臨界膜厚 / Si / GaP / 熱膨張係数差 / ミスフィット転位 / すべり転位
Research Abstract

III-V compound semiconductors were utilized for optoelectronic devices such as laser diodes and others and microwave devices such as high electron mobility transistors and others. They are key materials for communication and information terminals. On the other hand, a silicon (Si) semiconductor of a Ivth element has been widely used as LSIs for electronic systems including computers. If both semiconductors are combined as a single chip, novel devices could be developed.
When the III-V compound semiconductor is grown on the Si substrate, a large number of crystalline defects, specifically dislocations were generated in spite of many researches. It is caused by the difference in the number of valence electrons, the large difference in lattice constants and of thermal expansion coefficients. Then, novel devices have not been developed. In this research work, we tried to grow dislocation-free III-V compound semiconductors on Si substrates by focusing on the mismatch of lattice constants and … More of thermal expansion coefficients since the problem caused by the difference of the number of valence electrons has been solved by us. Lattice matching was tried by growing III-V-N compound semiconductors of GaPN and GaAsPN on the Si substrate. A Si capping layer was expected to suppress the thermal strain introduced at a cooling stage after growth due to the difference in thermal expansion coefficients. As a result, the dislocation -free III-V-N layers were successfully grown on the Si substrate for the first time. Neither threading dislocations nor misfit dislocations were observed even at hetero-interfaces. A dislocation-free GaAsPN/GaPN quantum well structure and Si/GaPN/Si structure were also grown. The Si/GaPN/Si structure is a symbolic structure for novel optoelectronic integrated circuits. The GaPN layer can be replaced with a layer for optical or microwave device and the Si capping layer is utilized for LSIs. Thus, a basic technology was developed for novel optoelectronic integrated circuits.
In order to expand the capability of device design, the increase of nitrogen contents is needed. High nitrogen contents of 7-10 % were achieved by low temperature growth under atomic hydrogen irradiation. Less

Report

(4 results)
  • 2001 Annual Research Report   Final Research Report Summary
  • 2000 Annual Research Report
  • 1999 Annual Research Report
  • Research Products

    (26 results)

All Other

All Publications (26 results)

  • [Publications] Y.Furukawa, H.Yonezu, K.Ojima, K.Samonji, Y.Fujimoto, K.Momose, K.Aiki: "Control of N Content of GaPN Grown by Molecular Beam Epitaxy and Growth of GaPN Lattice-Matched to Si(100) Substrate"Jpn. J. Appl. Phys.. Vol.41,No.2A. 528-532 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y.Fujimoto, H.Yonezu, A.Utsumi, K.Momose, Y.Furukawa: "Dislocation-Free GaAs_yP_<1-x-y>N_x/GaP_<0.98>N_<0.02> Quantum-Well Structure Lattice-Matched to a Si Substrate"Appl. Phys. Lett.. Vol.79,No.9. 1306-1308 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K.Momose, H.Yonezu, Y.Fujimoto, Y.Furukawa, Y.Motomura, K.AIki: "Dislocation-Free and Lattice-Matched Si/GaP_<1-x>N_x/Si Structure for Photo-Electronic Integrated Systems"Appl. Phys. Lett.. Vol.79,No.25. 4251-4153 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y.Fujimoto, H.Yonezu, K.Momose A.Utsumi, Y.Furukawa: "Control of Growth Process and Dislocation Generation of GaAs_<1-x>N_x Grown by All-Solid-Source Molecular Beam Epitaxy"J. Cryst. Growth. Vol.227/228. 491-495 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] V.H.Mendez-Garcia, A.P.Centeno, M.Lopez-Lopez, M.Tamura, K.Momose, K.Ojima, H.Yonezu: "Improvement in the Crystal of ZnSe Films on Si(111) Substrate with a Nitrogen Surface Treatment"Thin Solid Films. Vol.373. 33-36 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y.Fujimoto, H.Yonezu, S.Irino K.Samonji, K.Momose, N.Ohshima: "A High Quality GaAsP_<1-x>/In_<0.13>Ga_<0.87>P Quantum Well Structure Grown on Si Substrate with a Very Few Threading Dislocations"Jpn. J. Appl. Phys.. Vol.38,No.12A. 6645-6649 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Furukawa, H. Yonezu, K. Ojima, K. Samonji, Y. Fujimoto, K. Momose and K. Aiki: "Control of N Content of GaPN Grown by Molecular Beam Epitaxy and Growth of GaPN Lattice-Matched to Si(1OO) Substrate"Jpn. J. Appl. Phys. Vol.41-No.2A. 528-532 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Fujimoto, H. Yonezu, A. Utsumi, K. Momose and Y. Furukawa: "Dislocation-Free GaAs_yP_<1-x-y>N_x/GaP_<0.98>N_<0.02> Quantum-Well Structure Lattice-Matched to a Si Substrate"Appl. Phys. Lett.. Vol.79-No.9. 1306-1308 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Momose, H.Yonezu, Y. Fujimoto, Y. Furukawa, Y. Motomura and K. Aiki: "Dislocation-Free and Lattice-Matched Si/GaP_<1-x>N_x/Si Structure for Photo-Electronic Integrated Systems"Appl. Phys. Lett.. Vol.79-No.25. 4151-4153 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Fujimoto, H. Yonezu, K. Momose, A. Utsumi and Y. Furukawa: "Control of Growth Process and Dislocation Generation of GaAs_<1-x>N_x Grown by All-Solid-Source Molecular Beam Epitaxy"J. Cryst. Growth. Vol.227/228. 491-495 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] V.H.Mendez-Garcia, A.P.Centeno, M.Lopez-Lopez, M.Tamura, K.Momose, K.Ojima and H.Yonezu: "Improvement in the Crystal of ZnSe Films on Si(111) Substrate with a Nitrogen Surface Treatment"Thin Solid Films. Vol.373. 33-36 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Fujimoto, H. Yonezu, S. Irino, K. Samonji, K. Momose and N. Ohshima: "High Quality GaAs_xP_<1-x>/In_<0.13>Ga_<0.87>P Quantum Well Structure Grown on Si Substrate with a Very Few Threading Dislocations"Jpn. J. Appl Phys.. Vol.38-No.12A. 6645-6649 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y.Furukawa, H.Yonezu, K.Ojima, K.Samonji, Y.Fujimoto, K.Momose, K.Aiki: "Control of N Content of GaPN Grown by Molecular Beam Epitaxy and Growth of GaPN Lattice-Matched to Si(100)Substrate"Jpn.J.Appl.Phys.. Vol.41・No.2A. 528-532 (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y.Fujimoto, H.Yonezu, A.Utsumi, K.Momose, Y.Furukawa: "Dislocation-Free GaAs_yP_<1-x-y>N_x/GaP_<0.98>N_<0.02> Quantum-Well Structure Lattice-Matched to a Si Substrate"Appl.Phys.Lett.. Vol.79・No.9. 1306-1308 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] K.Momose, H.Yonezu, Y.Fujimoto, Y.Furukawa, Y.Motomura, K.AIki: "Dislocation-Free and Lattice-Matched Si/GaP_<1-x>N_x/Si Structure for Photo-Electronic Integrated Systems"Appl.Phys.Lett.. Vol.79・No.25. 4151-4153 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y.Fujimoto, H.Yonezu, K.Momose, A.Utsumi, Y.Furukawa: "Control of Growth Process and Dislocation Generation of GaAs_<1-x>N_x Grown bv All-Solid-Source Molecular Beam Epitaxy"J.Cryst.Growth. Vol.227/228. 491-495 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] V.H.Mendez-Garcia, A.P.Centeno, M.Lopez-Lopez, M.Tamura, K.Momose, K.Ojima, H.Yonezu: "Improvement in the Crystal of ZnSe Films on Si(111)Substrate with a Nitrogen Surface Treatment"Thin Solid Films. Vol.373. 33-36 (2000)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y.Fujimoto, H.Yonezu, S.Irino, K.Samonji, K.Momose, N.Ohshima: "A High Quality GaAs_xP_<1-x>/In_<0.13>Ga_<0.87>P Quantum Well Structure Grown on Si Substrate with a Very Few Threading Dislocations"Jpn.J.Appl.Phys.. Vol.38・No.12A. 6645-6649 (1999)

    • Related Report
      2001 Annual Research Report
  • [Publications] K.Samonji,H.Yonezu and N.Ohshima: "Lattice-Relaxation Process of (InAs)m(GaAs)n Strained Short-Period Superlattices Grown on GaAs"Jpn.J.Appl.Phys.. Vol.39No.5A. 2503-2507 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.Fujimoto,H.Yonezu,K.Momose,and K.Ojima: "Control of Growth Process and Dislocation Generation of GaAs1-xNx Growth by All-Solid-Source Molecular Beam Epitaxy"11th Molecular Beam Epitaxy (MBE-XI) Beijing,China,September10-15. 451-453 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.Fujimoto,H.Yonezu,K.Momose,A.Utsumi,and Y.Furukawa: "Control of Growth Process and Dislocation Generation of GaAs1-xNx Growth by All-Solid-Source Molecular Beam Epitaxy"Journal of Crystal Growth. (to be published)(印刷中). (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] V.H.Mendez-Garcia,A.Perez Centeno.M.Lopez-Lopez,M.Tamura,K.Momose,K.Ojima,and H.Yonezu: "Improvement in the crystal quality of ZnSe films on Si(111) substrates with a nitrogen surface treatment"Thin Solid Films. Vol.373. 33-36 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] M.Lopez-Lopez,V.H.Mendez-Garcia,M.Melendez-Lira,J.Luyo-Alvarado,M.Tamura,K.Momose,and H.Yonezu: "Molecular Beam Epitaxial Growth of ZnSe Layers on GaAs and Si substrates"Physica Status Solidi. Vol.220. 99-109 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.Fujimoto,H.Yonezu,他: "A High Quality GaAsxPl-x/In0,13Ga0,87P Quantum Well Structure Grown on Si Substrate with a Very Few Threading Dislocations"Japanese Journal of Applied PhysicsJ. 38・12A. 6645-6649 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] K.Ojima,H.Yonezu,他: "Strain Relaxation in GaP1-xNx Layers Grown on GaP and Si Substrates"7th Int.Conf.On Chemical Beam Epitaxy and Related Growth Techniques,Tsukuba.Workbook. 187-188 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] Y.Fujimoto,H.Yonezu,他: "Hight Quality GaAsP0,32/In0,13Ga0,87P/Si Quantum Well Structure with a Very Few Threading Dislocations"41st Electronic Materials Coference,Santa Barabara.Technical Program with Abstracts. 56-56 (1999)

    • Related Report
      1999 Annual Research Report

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Published: 1999-04-01   Modified: 2016-04-21  

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