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X-ray Diffraction Study of the Formation Process of SiO_2/Si Interfaces

Research Project

Project/Area Number 11450014
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionOsaka University

Principal Investigator

UMENO Masataka  Graduate School of Engineering, Dept. of Material & Life Science, Osaka University, Professor, 大学院・工学研究科, 教授 (50029071)

Co-Investigator(Kenkyū-buntansha) MASHIKO Yohji  Mitsubishi Electric Co., ULSI laboratory, group manager (researcher), ULSI技術開発センター, プロセス評価技術部長(研究者)
SHIMURA Takayoshi  Graduate School of Engineering, Dept. of Material & Life Science, Osaka University, Research Associate, 大学院・工学研究科, 助手 (90252600)
Project Period (FY) 1999 – 2001
Project Status Completed (Fiscal Year 2001)
Budget Amount *help
¥15,700,000 (Direct Cost: ¥15,700,000)
Fiscal Year 2001: ¥1,800,000 (Direct Cost: ¥1,800,000)
Fiscal Year 2000: ¥2,900,000 (Direct Cost: ¥2,900,000)
Fiscal Year 1999: ¥11,000,000 (Direct Cost: ¥11,000,000)
KeywordsSiO_2 / silicon / oxidation / thin film / interface / x-ray diffraction
Research Abstract

A lot of studies for the silicon dioxide have been carried out so far, but the oxidation process is not clear. For example, a layer-by-layer growth of the thermal oxidation is one of unprecedented phenomena. A SIMOX (seperatiorr-hy-implanted oxygen) wafer is one of the SOI (silicon-on-insulator) substrate, which is expected for low-power and high-speed devices. However, the formation process of the buried oxide layer is obscure. In this study we studied the formation process of the interface between the SiO_2 and Si crystals by X-ray diffraction technique.
The growth of epitaxially ordered Si0_2 in oxygen-implanted silicon during thermal annealing was investigated. The extra diffraction streak was observed at the initial stage of annealing. This means that the small precipitate itself has the ordered structure of 2x2 symmetry with respect to the Si layers. As the size of the precipitates became larger upon further annealing, the intensity of the extra streak gradually increased. This indicates that epitaxial growth of the ordered precipitates occurred, particulary, in the lateral direction because the ordered structure has better periodicity in the lateral direction than in the perpendicular direction. The formation of the buried oxide layer in the perpendicular direction was due mainly to coalescence rather than to epitaxial growth.
It was also found that the thermal oxide layer on Si(113) did not simple amorphous structure, but has the ordered sturucture with an epitaxial relation with the Si substrate, which was similar to those on the Si(001) and (111) substrates.

Report

(4 results)
  • 2001 Annual Research Report   Final Research Report Summary
  • 2000 Annual Research Report
  • 1999 Annual Research Report
  • Research Products

    (17 results)

All Other

All Publications (17 results)

  • [Publications] Takayoshi Shimura: "Characterization of SOI Waters by X-ray CTR Scattering"J. Cyst. Growth. 210. 98-101 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Takayoshi Shimura: "Epitaxially Ordered Structure in the Buried Oxide Layer of SIMOX Waters"The Physics and Chemistry of SiO_2 and Si-SiO_2 Interface 4. 2002-2. 241-249 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Kazunori Fukuda: "Investigation of SOI Waters by X-ray Diffractiorr Techniques"Proceedings of the 3rd International Symposium on Advanced Science and Technology of Silicon Materials J. Gyst. Growth. 636-641 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Yoshifumi Yoshioka: "Monitoring of Si Molecular-Beam Epitaxial Growth by an Ellipsomretric Method"Jpn. J. Appl. Phys.. 40. 371-375 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Takayoshi Shimura: "Existence of an Epitaxially Ordered Phase in the Buried Oxide of SIMOX Waters"Solid State Phenomena. 82-84. 485-490 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Takayoshi Shimura: "Formation of Epitaxially Ordered SiO_2 in Oxygen-implanted Silicon during Thermal Annealing"J. Cryst. Growth. 263. 37-40 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Shimura, T. Hosoi, and M. Umeno: "Characterization of SOI Wafers by X-ray CTR Scattering"J. Cryst. Growth. 210. 98-101 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Shimura, T. Hosoi, and M. Umeno: "Epitaxially Ordered Structure in the Buried Oxide Layer of SIMOX Wafers"The Physics and Chemistry of SiO_2 and the Si-SiO_2 Interface 4, 2000. 241-249 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Yoshioka, T. Ikuta, T. Taji, K. Mizobata, T. Shimura, and M. Umeno: "Monitoring of Si Molecular-Beam Epitaxial Growth by an Ellipsometric Method"Jpn. J. Appl. Phys.. 40. 371-375 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Shimura, T. Hosoi, K. Fukuda, and M. Umeno: "Existence of an Epitaxially Ordered Phase in the Buried Oxide of SIMOX Wafers"Solid State Phenomena. 82-84. 485-490 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Shimura, T. Hosoi, K. Fukuda, M. Umeno, and A. Ogura: "Formation of Epitaxially Ordered SiO_2 in Oxygen-implanted Silicon during Thermal Annealling"J. Cryst. Growth. 263. 37-40 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Takayoshi Shimura: "Existence of an Epitaxially 0rdered Phase in the Buried Oxide of SIMOX Wafers"Solid State Phenomena. 82-84. 485-490 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Takayoshi Shimura: "Formation of Epitaxially 0rdered Si0_2 in Oxygen-implanted Silicon durirg Thermal Annealing"J. Cryst. Growth. 263. 37-40 (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] Takayoshi Shimura: "Epitaxially Ordered Structure in the Buried Oxide Layer of SIMOX Wafers"The Physics and Chemistry of SiO_2 and Si-SiO_2 Interface 4. 241-249 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Kazunori Fukuda: "Investigation of SOI Wafers by X-ray Diffraction Techniques"Proceedings of the 3rd International Symposium on Advanced Science and Technology of Silicon MaterialsJ.Cyst.Growth. 636-641 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Takayoshi Shimura: "Epitaxially Ordered Structure in the Buried Oxide Layer of SIMOX Wafers"The Physics and Chemistry of SiO_2 and Si-SiO_2 Interface 4. (in press). (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] Takayoshi Shimura: "Characterization of SOI Wafers by X-ray CTR Scattering"J. Cyst. Growth. (in press). (2000)

    • Related Report
      1999 Annual Research Report

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Published: 1999-04-01   Modified: 2016-04-21  

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