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Study on Impurity Co-Doping by Atomic Positional Control

Research Project

Project/Area Number 11450016
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionRIKEN (The Institute of Physical & Chemical Research)

Principal Investigator

IWAI Souhachi  RIKEN, Semiconductors Lab., Senior Research Scientist, 半導体工学研究室, 先任研究員 (40087474)

Co-Investigator(Kenkyū-buntansha) NOMURA Shintarou  University of Tsukuba, Associated Professor, 物理学系, 助教授 (90271527)
AOYAGI Yoshinobu  RIKEN, Semiconductors Lab., Chief Scientist, 半導体工学研究室, 先任研究員 (70087469)
HIRAYAMA Hideki  RIKEN, Semiconductors Lab., Research Scientist, 半導体工学研究室, 研究員 (70270593)
Project Period (FY) 1999 – 2001
Project Status Completed (Fiscal Year 2001)
Budget Amount *help
¥15,200,000 (Direct Cost: ¥15,200,000)
Fiscal Year 2001: ¥1,700,000 (Direct Cost: ¥1,700,000)
Fiscal Year 2000: ¥1,700,000 (Direct Cost: ¥1,700,000)
Fiscal Year 1999: ¥11,800,000 (Direct Cost: ¥11,800,000)
KeywordsMOVPE / Gallium Nitride / Aluminum Gallium Nitride / Alternative source supply / Impurity doping / P-type conduction / Hole concentration / Activation energy / III族窒化物半導体 / AlGaN / Mg-ドーピング / スーパーラティス / 有機金属気相成長法 / 紫外レーザー / 原子位置制御 / 原子層成長法 / 有機金属気相成長
Research Abstract

New impurity doping techniques were developed to obtain highly conductive p-type GaN and Al_xCa_<1-x>N layers by using metal-organic vapor phase epitaxy. Impurity source materials were supplied by controlling the feed time to introduce impurity atoms into specific crystal layers for reducing the acceptor level due to the formation of impurity complexes.
By using alternative feedings of TMG source gas and NH_3 with the feed of Cp_2Mg and TESi during the TMG feed,we obtained a highly hole concentration of 2x10^<19>cm^<-3> for p-type GaN which was grown directly on a low temperature AIN buffer layer on a sapphire substrate.
High quality Al_<0.6>Ga_<0.4>N layers were obtained by alternative supply of TMA/TMG source pulses and NH_3 pulse. Migrations of Al and Ga atoms on the substrate surface were enhanced in the ambience of small amount of NH_3, which suppress the crystal defect due to the desorption of N atoms from the AlGaN surface.
P-type Al_<0.45>Ga_<0.55>N of 4x10^<18>cm^<-3> hole concentration was obtained by Cp_2Mg supply during the feeding time of TMG The temperature dependence of hole concentration yielded 75meV for the activation energy of Mg acceptor, which is about 1/5 as small as that of Mg in AlGaN grown by the continuous feedings of source materials. By feeding the optimum amount of Si source just after the feeding of Mg source, the hole concentration was further increased to 6x10^<18>cm^<-3>, provably due to co-doping effect. This alternative feeding technique with Mg doping was applied to grow a p-type Al_<0.47>Ga_<0.53>N layer in a light emitting diode. U-V emission of 282nm wavelength was observed from the diode by current injection through the p-type Al_<0.47>Ga_<0.53>N layer in the p-n junction.
In conclusion, the doping technique by alternative feeding of source materials is one of the candidate techniques to obtain highly p-type conductivity for wide band gap materials like Al_xGa_<1-x>N.

Report

(4 results)
  • 2001 Annual Research Report   Final Research Report Summary
  • 2000 Annual Research Report
  • 1999 Annual Research Report
  • Research Products

    (30 results)

All Other

All Publications (30 results)

  • [Publications] S.Iwai, H.Hirayama, Y.Aoyagi: "High Doped p-Type GaN Grown by Alternative Co-Doping Technique"Material Research Society Symposium Proceeding. 719. 3-9 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Hirayama, Y.Enomoto, A.Kinoshita, A.Hirata, Y.Aoyagi: "Room-Temperature Intense 320nm-Band UV Emission from Quaternary InAlGaN-B ased Multi-Quantum Wells"Applied Physics Letters. 80・9. 1589-1591 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Hirayama, Y.Enomoto, A.Kinoshita, A.Hirata: "Efficient 230-280nm Emission from high-Al-Content AlGaN-Based Multi-Quantum Wells"Applied Physics Letters. 80・1. 37-39 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Hirayama, M.Ainoya, A.Kinoshita, A.Hirata, Y.Aoyagi: "Fabrication of Low Threading Dislocation Density AlGaN Buffer on SiC using Highly Si-doped AlGaN Superlattices"Applied Physics Letters. 80・80. 2057-2059 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Hirayama, A.Kinoshita, M.Ainoya, T.Yamabi, T.Yamanaka, A.Hirata, Y.Aoyagi: "Growth and Optical Properties of Quaternary InAlGaN for 300nm-band Uv Emitting Devices"Phvs. Stat. Sol. (a). 188・1. 83-89 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Hirayarna, A.Kinoshita, M.Ainoya, T.Yamanaka, A.Hirata, Y.Aoyagi: "340nm-band bright UV-LEDs using Quaternary InAlGaN active region"Institute of Physics (IOP) Conference Series. 170・2. 195-200 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Hirayama, T.Yamanaka, A.Kinoshita, H.Hiraoka, A.Hirata, Y.Aoyagi: "Fabrication of p-n junction with Mg-doped wide bandgap InAIGaN for application to UV emitters"GaN and Related Alloys-2001, Mater. Res. Soc.. 693. 14.10 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Hirayama, A.Kinoshita, T.Yarnanaka, A.Hirata, Y.Aoyagi: "In Segregation Effects on Optical and Doping Properties of InAlGaN for UV Emitting Devices"GaN and Related Alloys, Mater. Res. Soc.. 639. G2.8 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H.Hirayama, M.Ainoya, A.Kinoshita, A.Hirata, Y.Aoyagi: "Drastic Reduction of Threading Dislocation Density of AlGaN on SiC Wafer by Using Highly-Si-Incorporated AlGaN Superlattice"GaN and Related Alloys, Mater. Res. Soc.. 639. G1.3 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] B.H.Jun, H.Hirayama, Y.Aoyagi: "Effect of thermal annealing on the Pd/Au contact to p-type Al_<0.15>Ga_<0.85>N"Jan. J. Appl.Phys.. 41・2A. 581-582 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S.Nomura, K.Matsuda, T.Sakai, Y.Aoyagi: "Near-field scanning optical microscopy of quantum dot arrays"Jan. J. Appl.Phys.. 41・4B. 2668-2670 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 平山秀樹, 木下敦寛, 青柳克信: "窒化物を用いた300nm帯紫外発光素子の開発"応用物理. 71・2. 204-208 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 平山秀樹, 青柳克信: "InAlGaN4元混晶を用いた330nm帯高効率紫外LED"日本結晶成長学会誌. 29・3. 18-26 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 平山秀樹: "レーザー材料として見た半導体-(In)AlGaN窒化物混晶の結晶成長と300nm帯紫外高輝度LEDへの応用-"レーザー研究. 30・6. 308-314 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] S. Iwai, H. Hirayama and Y. Aoyagi: "High Doped p-Type GaN Grown by Alternative Co-Doping Technique"Material Research Society Symposium Proceeding. Vol. 719. 3-9 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Hirayama, T. Yamabi, A. Kinoshita, Y. Enomoto, A. Hirata, T. Araki, Y. Nanishi and Y. Aoyagi: "Marked enhancement of 320-360 nm UV emission in quaternary In_xAl_yGa_<1-x-y>N with In-segregation effect"Appl. Phys. Lett.. Vol.80, no2. 207-209 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Hirayama, Y. Enomoto, A. Kinoshita, A. Hirata and Y. Aoyagi: "Room-Temperature Intense 320nm-Band UV Emission from Quaternary InAlGaN-Based Multi-Quantum Wells"Appl. Phys. Lett.. vol.80, no.9. 1589-1591 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Hirayama, Y Enomoto, A. Kinoshita, A. Hirata and Y. Aoyagi: "Efficient 230-280nm Emission from high-Al-Content AlGaN-Based Multi-Quantum Wells"Appl. Phys. Lett.. vol. 80, no. 1. 37-39 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Hirayama, M. Ainoya, A. Kinoshita, A. Hirata and Y. Aoyagi: "Fabrication of Low Threading Dislocation Density AlGaN Buffer on SiC using Highly Si-doped AlGaN Superlattices"Appl. Phys. Lett.. vol.80, no.12. 2057-2059 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Hirayama, A. Kinoshita, M. Ainoya, T. Yamabi, T. Yamanaka, A. Hirata and Y. Aoyagi: "Growth and Optical Properties of Quaternary InAlGaN for 300nm-band UV Emitting Devices"Phys. Stat. Sol. (a). vol. 188, no.1. 83-89 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Hirayama, A. Kinoshita, M. Ainoya, T. Yamanaka, A. Hirata and Y. Aoyagi: "340nm-band bright UV-LEDs using Quaternary InAlGaN active region"Institute of Physics (IOP) Conference Series. No.170: Chapter 2. 195-200 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Hirayama, T. Yamanaka, A. Kinoshita, H. Hiraoka, A. Hirata and Y. Aoyagi: "Fabrication of p-n junction with Mg-doped wide bandgap InAlGaN for application to UV emitters"GaN and Related Alloys-2001, Mater Res. Soc.. Vol. 693. (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Kinoshita, H. Hirayama, T. Yamabi, A. Hirata and Y. Aoyagi: "High-efficiency UV-emission at 345nm from InAlGaN light-emitting diodes"GaN and Related Alloys-2001, Mater. Res. Soc.. Vol. 693. (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Yamabi, A. Kinoshha, H. Hirayama, A. Hirata and Y. Aoyagi: "Investigation of the optimum growth conditions of wide bandgap InAlGaN quaternary for UV-LEDs"GaN and Related Alloys-2001,Mater. Res. Soc.. Vol. 693. (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Jun, H. Hirayama and Y. Aoyagi: "Effect of thermal annealing on the Pd/Au contact to p-type Al0.15Ga0.85N"Jan. J. Appl. Phys.. Vol. 41 , part 1 , no. 2A. 581-582 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Hirayama, A. Kinoshita, T. Yamanaka, A. Hirata and Y. Aoyagi: "In Segregation Effects on Optical and Doping Properties of InAlGaN for UV Emitting Devices"GaN and Related Alloys, Mater. Res. Soc.. Vol. 639. (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] H. Hirayama, M. Ainoya, A. Kinoshita, A. Hirata and Y. Aoyagi: "Drastic Reduction of Threading Dislocation Density of AlGaN on SiC Wafer by Using Highly-Si-Incorporated AlGaN Superlattice"GaN and Related Alloys, Mater. Res. Soc.. Vol. 639. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Kinoshita, H. Hirayama, M. Ainoya, Y. Yamabi, A. Hirata and Y. Aoyagi: "Current Injection UV-Emission from InAlGaN Multi Quantum Well Light-Emitting Diodes"GaN and Related Alloys, Mater. Res. Soc.. Vol. 639. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] A.Kinoshita,H.Hirayama et al.: "Room Temperature Operation of 333nm of AlGaN Multi Quantum Well UV-LEDs with Mg-doped SL layers"Applied Physics Letters. (submitted).

    • Related Report
      1999 Annual Research Report
  • [Publications] A.Kinoshita,H.Hirayama et al.: "Current Injection Emission at 333nm from AlGaN/AlGaN Multi Quantum Well UV LED"physica status solidi. (submitted).

    • Related Report
      1999 Annual Research Report

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Published: 1999-04-01   Modified: 2016-04-21  

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