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Development of high-speed and high-sensitivity semiconductor multiple quantum well photorefractive devices

Research Project

Project/Area Number 11450025
Research Category

Grant-in-Aid for Scientific Research (B).

Allocation TypeSingle-year Grants
Section一般
Research Field Applied optics/Quantum optical engineering
Research InstitutionUniversity of Tokyo

Principal Investigator

KURODA Kazuo  Institute of Industrial Science, University of Tokyo Professor, 生産技術研究所, 教授 (10107394)

Co-Investigator(Kenkyū-buntansha) MATOBA Osamu  Institute of Industrial Science, University of Tokyo Associate Researcher, 生産技術研究所, 助手 (20282593)
SHIMURA Tsutomu  Institute of Industrial Science, University of Tokyo Associate Professor, 生産技術研究所, 助教授 (90196543)
ARAKAWA Yasuhiko  Research Center for Advanced Science and Technology, University of Tokyo Professor, 先端科学技術研究センター, 教授 (30134638)
ASIHARA Satoshi  Institute of Industrial Science, University of Tokyo Associate Researcher, 生産技術研究所, 助手 (10302621)
Project Period (FY) 1999 – 2000
Project Status Completed (Fiscal Year 2000)
Budget Amount *help
¥14,400,000 (Direct Cost: ¥14,400,000)
Fiscal Year 2000: ¥4,300,000 (Direct Cost: ¥4,300,000)
Fiscal Year 1999: ¥10,100,000 (Direct Cost: ¥10,100,000)
KeywordsInGaAs / GaAs MQW / photorefractive device / near infrared light / exciton resonance / Franz-Keldysh effect / Quantum confined effect / real-time hologram / 実時間ホルグラム / InGaAS / 量子閉じ込めシュタルク効果
Research Abstract

Photorefractive materials dynamically change the refractive index by the illumination of nonuniform intensity pattern. They have lots of potential applications, such as, high-speed parallel signal processing devices for next generation information network systems, high-speed adaptive sensor for vibration detection, near-infrared optical devices for biomedical applications, etc. The target of this research was to develop high-speed and high-sensitivity photorefractive materials using InGaAs/GaAs semiconductor multiple quantum wells. (1) We measured the lifetime and diffusion coefficient of photocarriers using time-resolved four wave mixing. The carrier lifetime is about 100 ps in proton-implanted samples. (2) We fabricated the photorefractive devices in quantum confined Stark geometry. The devices consist of the MQW layers sandwiched by SiO2 insulating layers. The diffraction efficiency is improved by 20 times in comparison with the Franz-Keldysh devices. However, the spatial resolution became poor. (3) In order to improve the spatial resolution, we used the low-temperature grown GaAs layers for insulating layers instead of SiO2 layers. This new structure substantially improved the spatial resolution of the devices. (4) We fabricated the devices that work at 1064 nm, that is, the wavelength of Nd : YAG laser. To fit the exciton resonance to this wavelength, the fraction of indium is increased in InGaAs quantum well layers. However, this results in large lattice constant mismatch between InGaAs and GaAs layers. The MQW layers are successfully grown on the properly designed buffer layer which releases the strain in the MQW layers.

Report

(3 results)
  • 2000 Annual Research Report   Final Research Report Summary
  • 1999 Annual Research Report
  • Research Products

    (21 results)

All Other

All Publications (21 results)

  • [Publications] V.Mizeikis,K.Kuroda 他: "Non-destructive optical characterization of the surface region in bulk semiconductors and heterostructures"Thin Solid Films. 364. 186-191 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.Jarasiunas,K.Kuroda 他: "Characterization of proton-irradiated InGaAs/GaAs multiple quantum well structures by nonresonant transient four-wave mixing technique"Japan Journal of Applied Physics. 39,No.10. 5781-5787 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] S.Iwamoto,S.Taketomi 他: "Photorefractive multiple quantum wells at 1064 nm"Optics Letters. 26,No.1. 22-24 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] S.Iwamoto,H.Kageshima 他: "Resonant photorefractive effect in InGaAs/GaAs multiple quantum wells"Optics Letters. 24,No.5. 321-323 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] A.Kamshilin,K.Kuroda 他: "Linear sensing of speckle-pattern displacements using a photorefractive GaP crystals"Applied Physics Letters. 74,No.18. 2575-2577 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 志村努,岩本敏,黒田和男: "半導体多重量子井戸構造を用いたフォトリフラクティブ光デバイス"光学. 29,No.8. 496-497 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] S.Iwamoto, H.Kageshima, et al.: "Resonant photorefractive effect in InGaAs/GaAs multiple quantum wells"Optics Letters. 24, No.5. 321-323 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] A.A.Kamshilin, K.Kuroda, et al.: "Linear sensing of speckle-pattern displacements using a photorefractive GaP crystal"Applied Physics Letters. 74, No.18. 2575-2577 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] V.Mizeikis, K.Jarasiunas, N.Lovergine, K.Kuroda: "Non-destructive optical characterization of the surface region in bulk semiconductors and heterostructures"Thin Solid Films. 364. 186-191 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.Jarasiunas, K.Kuroda et al.: "Characterization of proton-irradiated InGaAs/GaAs multiple quantum well structures by nonresonant transient four-wave mixing technique"Japanese Journal of Applied Physics. 39, No.10. 5781-5787 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] S.Iwamoto, S.Taketomi, et al.: "Photorefractive multiple quantum wells at 1064 nm"Optics Letters. 26, No.1. 22-24 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Shimura, S.Iwamoto, K.Kuroda: "semiconductor multiple quantum well photorefractive devices"Kogaku (in Japanese). 29, No.8. 496-497 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] V.Mizeikis,K.Kuroda 他: "Non-destructive optical characterization of the surface region in bulk semiconductors and heterostructures"Thin Solid Films. 364. 186-191 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] K.Jarasiunas,K.Kuroda 他: "Characterization of proton-irradiated InGaAs/GaAs multiple quantum well structures by nonresonant transient four-wave mixing technique"Japan Journal of Applied Physics. 39,No.10. 5781-5787 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] S.Iwamoto,S.Taketomi 他: "Photorefractive multiple quantum wells at 1064 nm"Optics Letters. 26,No.1. 22-24 (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] 志村努,岩本敏,黒田和男: "半導体多重量子井戸構造を用いたフォトリフラクティブ光デバイス"光学. 29,No.8. 496-497 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 岩本敏、黒田和男: "光機能材料およびデバイスの基礎III"レーザー研究. 28,No.10. 705-711 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] S.Iwamoto,H.Kageshima 他: "Resonant photorefractive effect in InGaAs/GaAs multiple quantum wells"Optics Letters. 24巻5号. 321-323 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] A.A.kamshilin,Y.Iida 他: "Linear sensing of speckle-pattern displacements using a photorefractive GaP crystal"Applied Physics Letters. 74巻18号. 2575-2577 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] H.Horiuchi,T.Shimura 他: "Narrow bandwidth operation of high power broad area diode laser using cascaded phase-conjugate injection locking"Applied Physics B. 68巻5号. 1021-1026 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] S.Ashihara,K.Kuroda 他: "Autocorrelation of picosecond pulses in bacteriorhodopsin film using light self-diffraction from intensity and polarization holograms"Optics Communications. 165巻1号. 83-89 (1999)

    • Related Report
      1999 Annual Research Report

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Published: 1999-04-01   Modified: 2016-04-21  

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