• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Development of a resistive thin film for high temperature metal halide application

Research Project

Project/Area Number 11450114
Research Category

Grant-in-Aid for Scientific Research (B).

Allocation TypeSingle-year Grants
Section一般
Research Field 電力工学・電気機器工学
Research InstitutionFUKUI NATIONAL COLLEGE OF TECHNOLOGY

Principal Investigator

INOUYE Akihiro  Fukui-National College of Technology Electronics and Information Engineering Professor, 電子情報工学科, 教授 (00311019)

Project Period (FY) 1999 – 2000
Project Status Completed (Fiscal Year 2000)
Budget Amount *help
¥8,500,000 (Direct Cost: ¥8,500,000)
Fiscal Year 2000: ¥2,600,000 (Direct Cost: ¥2,600,000)
Fiscal Year 1999: ¥5,900,000 (Direct Cost: ¥5,900,000)
Keywordsthin film / metal halide vapor / UV irradiation under high temperature / protective film for electrode-less lamp / Silicon carbide / Silicon nitride / 無電極放電ランプ保獲膜 / 耐金属ハロゲン酸化膜
Research Abstract

It is desired to realize high efficacy light sources to reduce energy consumption. One of the solutions is an electrode-less discharge lamp dosed with metal halide however, the quartz discharge tube reacts with the metal halide dose. To realize a long life electrode-less discharge metal halide lamp, protective thin films have been studied. Protective thin films were created on quartz plates by a discharge sputtering method. These coated quartz plates were then sealed into a quartz vessel with metal halides. The reactions between these thin films and the metal halide have been accelerated for 100 hours at a temperature of 1,000℃ under UV irradiation.
It was found that SiC is the best resistive film and the resistance order is SiC>Si_3N_4>AlN> oxide. The SiC and nitride films adhere on the quartz plate more strongly than the oxide films. In case of the thick protective film, there are many fine cracks on the surface of the film. In case of the aluminum oxide thin film, many fine crystals are observed on the surface.
The reason that the silicon carbide, silicon nitride or aluminum nitride survives the hot metal halide vapor is believed to be that covalence bond is strongest bond for such active materials and these films are bound by covalence bond. These thin films can potentially be used as protection films for high temperature metal halides if these films are made in the condition 0<kd<10, where k is the extinction coefficient, and d is film thickness.

Report

(3 results)
  • 2000 Annual Research Report   Final Research Report Summary
  • 1999 Annual Research Report
  • Research Products

    (9 results)

All Other

All Publications (9 results)

  • [Publications] 井上昭浩,堀井直宏: "ハロゲン化金属蒸気下における薄膜の挙動"平成12年照明学会全国大会予稿集. 73 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 井上昭浩,堀井直宏,Mohd Huzaily Bin Ishak: "ハロゲン化金属蒸気下における薄膜の挙動"電子情報通信学会技術報告(信学技報). EE2000-19. 15 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 井上昭浩,堀井直宏,Mohd Huzaily Bin Ishak: "ハロゲン化金属蒸気下における薄膜の挙動"照明学会研究会資料. LS-00-32. 15 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Akihiro Inouye and Naohiro Horii: "Reaction of Thin Film with Metal-Halide Under UV Irradiation or high Temperature"Proceedings of 2000 Annual Conference of The Illuminating Engineering Institute of Japan. 73 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Akihiro Inouye, Naohiro Horii Mohd Huzairy Bin Ishak: "Thin film reaction with metal-halides under high temperature"Technical Report of IEICE. EE-2000-19. 15 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Akihiro Inouye, Naohiro Horii Mohd Huzairy Bin Ishak: "Thin film reaction with metal-halides under high temperature"Technical Report of IEIJ. LS-00-32. 15 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 井上昭浩,堀井直宏: "ハロゲン化金属蒸気下における薄膜の挙動"平成12年照明学会全国大会予稿集. 73 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 井上昭浩,堀井直宏,Mohd Huzaily Bin Ishak: "ハロゲン化金属蒸気下における薄膜の挙動"電子情報通信学会 技術報告(信学技報). EE2000-19. 15 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 井上昭浩,堀井直宏,Mohd Huzaily Bin Ishak: "ハロゲン化金属蒸気下における薄膜の挙動"照明学会研究会資料. LS-00-32. 15 (2000)

    • Related Report
      2000 Annual Research Report

URL: 

Published: 1999-04-01   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi