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Fabrication of UV-Sensitive SiC Diode by Laser Processing

Research Project

Project/Area Number 11450121
Research Category

Grant-in-Aid for Scientific Research (B).

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionNagoya Institute of Technology

Principal Investigator

NAKASHIMA Kentare  Nagoya Institute of Technology, Dept.of Engineering, Professor, 工学部, 教授 (80024305)

Co-Investigator(Kenkyū-buntansha) ERYU Osamu  Nagoya Institute of Technology, Dept.of Engineering, Assoc.Professor, 工学部, 助教授 (10223679)
Project Period (FY) 1999 – 2000
Project Status Completed (Fiscal Year 2000)
Budget Amount *help
¥14,400,000 (Direct Cost: ¥14,400,000)
Fiscal Year 2000: ¥3,500,000 (Direct Cost: ¥3,500,000)
Fiscal Year 1999: ¥10,900,000 (Direct Cost: ¥10,900,000)
KeywordsSilicon carbide / excimer laser / laser doping / UV sensor / Photo-responsivity / aluminum / Titanium / ohmic contact / エキシマレーザー / レーザー・プロセス / W タングステン
Research Abstract

(1) Results in 1999
(a) Al-depth profiles in n-type 6H-SiC doped with a pulsed excimer laser (KrF) processing method under the conditions of a constant pressure 100 Torr of the hydrogen-diluted TMA (trimethylaluminum) have been evaluated varying a number of laser pulses from 1000 to 8000 shots. They were approximated as sum of two complimentary error-functions ; the one nearer to surface ranging from 10 to 30 nm and the other inner one (tail distribution) from 20 to 100 nm. The investigations show that the aluminum depth profiles could be controlled between 20 and 100 nm according to the number of the laser pulses. A fraction of doped Al was electrically activated without any post heat treatments, and p-type conduction was confirmed with Hall effect and I-V measurements. Al-acceptor levels at E_v+0.239 eV was also confirmed with PL measurements.
(b) Ohmic contacts with W/Ti and Al/Ti to n- and p-type 6H-SiC substrates, respectively, have been refined with a pulsed laser processing using … More KrF excimer laser. The electrodes have very smooth surfaces and the contact resistivity of 6.7x10^<-5> and 1x10^<-3> Ωcm^2 for n- and p-type substrate, respectively. The contact interface regions are very thin comparing with the one produced with heat treatments at high temperature.
(2) Results in 2000
(a) Al-depth profiles in n-type 6H-SiC doped with a pulsed laser processing using a KrF excimer laser have reconfirmed the distribution of the both regions of 0 to 20 nm and 20 to 100 nm, which are approximated with the sum of the complimentary error-function. The surface Al concentrations estimated from the curve fitting are 9.0x10^<17>, 4.5x10^<18>, and 2.7x10^<19> Al/cm^3 for the respective gas pressure of TMA/H_2 10, 100, and 200 Torr, keeping constant an energy density of the laser pulse 1.2J/cm^2 and a number of laser shots 1000. The present investigations confirmed that Al-depth profiles could be controlled with three parameters such as the TMA/H_2 gas pressure and the laser energy density, and a number of laser shots.
(b) Thin pn junction diodes have been fabricated on the undoped n-type 6H-SiC (2.5x10^<115> N/cm^3) under the following conditions, TMA/H_2 ; 100 Torr, No.of shots ; 8000, and 1.2J/cm^2. Using a thin Al/Ti ohmic contact on the P-type doped-layer, the photo-responsivity has maximum external quantum efficiency 41% at the wavelength of 330 nm. Less

Report

(3 results)
  • 2000 Annual Research Report   Final Research Report Summary
  • 1999 Annual Research Report
  • Research Products

    (22 results)

All Other

All Publications (22 results)

  • [Publications] K.Nakashima et al.: "Improved Ohmic Contacts to 6H-SiC by Pulsed Laser Processing"Mater.Sci.Forum. 338/342. 1005-1008 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Hishida et al.: "Excimer Laser Annealing of Ion-implanted 6H-Silicon Carbide"Mater.Sci.Forum. 338/342. 873-876 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] O.Eryu et al.: "Explosive Crystallization of the Ion Implanted Amorphous SiC Layer"1^<st>.Intern.Workshop on Ultra-Low-Loss Power Device Technology. (Proceedings). 171-172 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 中嶋堅志郎: "SiC半導体基板のレーザープロセス"応用物理. 70巻2号. 188-190 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 中嶋堅志郎: "SiCのパルス・レーザープロセス基盤技術と紫外線センサへの応用"電子情報通信学会技術研究報告. ED2000-27. 67-72 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 中嶋堅志郎: "パルス・レーザープロセスによるSiC基板技術"SiC及び関連ワイドギャップ半導体研究会講演会(招待講演)第8回. (Abstracts). 6 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.Nakashima et al.: "Improved Ohmic Contacts to 6H-SiC by Pulsed Laser Processing"Mater.Sci.Forum. 338/342. 1005-1008 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] Y.Hishida et al.: "Excimer Laser Annealing of Ion-implanted 6H-Silicon Carbide"Mater.Sci.forum. 338/342. 873-876 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] O.Eryu et al.: "Explosive Crystallization of the Ion Implanted Amorphous SiC Layer"1st Intern.Workshop on Ultra-Low-Loss Power Device Technology, Proc.. 171-172 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.Nakashima: "Laser Process on SiC Semiconductor Substrates (in Japanese)"OYOBUTSURI. 70/02. 188-190 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.Nakashima: "Laser Processing of SiC substrate and its Application to UV sensors (in Japanese)"Technical Report of IEICE. ED2000-27. 67-72 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] K.Nakashima: "Pulsed laser Process on SiC Substrates (in Japanese)(Invited)"The 8th Forum on SiC and related wide-gap semiconductors, abstracts. 6 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 中嶋堅志郎: "SiC半導体基板のレーザープロセス"応用物理. 70・2. 188-190 (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] 中嶋堅志郎: "SiCのパルス・レーザープロセス基盤技術と紫外線センサへの応用"電子情報通信学会技術研究報告. ED2000-27. 67-72 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.Hishida 他3名: "Excimer Laser Annealing of Ion-implanted 6H-Silicon Carbide"Mater.Sci.Forum. 338/342. 873-876 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] O.Eryu 他3名: "Explosive Crystallization of the Ion Implanted Amorphous SiC Layer"1^<st>.Intern.Workshop on Ultra-Low-Loss Power Device Technology. 171-172 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 青山光太郎 他4名: "パルスレーザーアニーリングによるイオン注入SiCの結晶回復"SiC及び関連ワイドギャップ半導体研究会(第9回). 予稿集. 59 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 吉田和弘 他5名: "6H-SiCへのTaSi_2オーミック電極の作製"SiC及び関連ワイドギャップ半導体研究会(第9回). 予稿集. 75 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] K.Nakashima 他4名: "Improved Ohmic Contacts to 6H-SiC by Pulsed Laser Processing"Nuclear Instruments and Methods in Physics Research B. (印刷中). (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] K.Nakashima: "パルス・レーザー・プロセスによる SiC 基板技術 (招待講演)"SiC 及び関連ワイドギャップ半導体研究会講演会(第8回). (予稿集). 6 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] O.Eryu 他3名: "SiCイオン注入欠陥層のパルスレーザーアニーリング"SiC 及び関連ワイドギャップ半導体研究会講演会(第8回). (予稿集). 62 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] Y.Nisikuni 他6名: "レーザードーピング法を用いた6H-SiC UVセンサーの試作と特性評価"SiC 及び関連ワイドギャップ半導体研究会講演会(第8回). (予稿集). 79 (1999)

    • Related Report
      1999 Annual Research Report

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Published: 1999-04-01   Modified: 2016-04-21  

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