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Study on fabrication method for ultra-small transistors by means of selective atomic-layer deposition

Research Project

Project/Area Number 11450125
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionHIROSHIMA UNIVERSITY

Principal Investigator

YOKOYAMA Shin  Research Center for Nanodevices and Systems, Hiroshima University, Professor, ナノデバイス・システム研究センター, 教授 (80144880)

Co-Investigator(Kenkyū-buntansha) NAKAJIMA Anri  Research Center for Nanodevices and Systems, Hiroshima University, Professor, ナノデバイス・システム研究センター, 助教授 (70304459)
SHIBAHARA Kentaro  Research Center for Nanodevices and Systems, Hiroshima University, Associate Professor, ナノデバイス・システム研究センター, 助教授 (50274139)
Project Period (FY) 1999 – 2001
Project Status Completed (Fiscal Year 2001)
Budget Amount *help
¥10,600,000 (Direct Cost: ¥10,600,000)
Fiscal Year 2001: ¥1,900,000 (Direct Cost: ¥1,900,000)
Fiscal Year 2000: ¥2,800,000 (Direct Cost: ¥2,800,000)
Fiscal Year 1999: ¥5,900,000 (Direct Cost: ¥5,900,000)
KeywordsSelective deposition of silicon / Atomic-layer deposition / Self-limiting mechanism / Dislane / Intermittent exposure method / Silicon narrow wire / Transistor / Coulomb blockade / 塩化水素脱離反応 / 2インチSiウェハ / ガスフローパターン / 金属触媒 / 光・熱触媒反応 / 多結晶シリコン / 微細トランジスタ / 低温電気伝導 / クーロン振動 / 非線形電気伝導 / シリコンドット / 低抵抗 / ジシラン熱分解 / シリコン窒化膜 / シリコン酸化膜 / 活性化エネルギー
Research Abstract

The purpose of this study is to develop a new method for fabrication of ultrasmall transistors, which is impossible by the conventional lithography method, by means of the selective atomic-layer deposition of silicon (Si). At the edge of the stacked layered structures consisting of different materials, if the selective deposition of Si occurs only on the specific material, the gate length of the MOS transistors can be controlled by the thickness of the deposited film. In this study, this method is developed. The summary of the obtained results is listed below.
1. The selective atomic-layer deposition method of silicon nitride is developed, which is the basis of this study.
2. The selective atomic-layer deposition method for Si is developed, in which the Si film is deposited only onto the silicon nitride and very small amount deposition on SiO_2, by means of the intermittent exposure of Si_2H_6 gas.
3. By using the above method, very narrow Si wires (21 nm wide and 28 nm thick) is fabricat … More ed. The resistivity of the Si wires is about 1/5 compared with that fabricated by the conventional method using lithography and dry etching.
4. Atomic-layer deposition method of Si with very smooth surface is developed by using the alternative supply of Si_2H_6 and SiCl_4, in which the deposition rate is two mono-layers per one deposition cycle.
5. As the preliminary study for the evaluation of the narrow Si wires, the polycrystalline (poly-) Si wires (minimum width of 95 nm and minimum thickness of 7 nm) were fabricated by using the low-pressure chemical vapor deposition of SiH_4, followed by the electron-beam lithography and dry etching. And the electrical characteristics were measured. As the result the Coulomb blockade effect was observed at low temperatures (5〜80 K) and the electronic conduction mechanism in the narrow poly-Si wires were proposed.
1. The current suppression phenomenon at the low-voltage region, which might be caused by the coulomb blockade effect, was observed for the Si narrow wires fabricated by the selective atomic-layer deposition. Less

Report

(4 results)
  • 2001 Annual Research Report   Final Research Report Summary
  • 2000 Annual Research Report
  • 1999 Annual Research Report
  • Research Products

    (31 results)

All Other

All Publications (31 results)

  • [Publications] Shin Yokoyama: "Atomic-Layer Deposition of Silicon Nitride"J. Korean Physical Soc.. 35. S71-S75 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Walter Hansch: "Characterization of Silicon/Oxide/Nitirde Layers by X-ray Photoelectron Spectroscopy"Appl. Phys. Lett.. 75. 1535-1537 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Shin Yokoyama: "Low-Temperature Selective Deposition of Silicon by Time-Modulation Exposure of Disilane and Formation of Silicon Nanowires"Extend. Abst. of the Int. Conf. on Solid State Devices and Materials. 202-203 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Shin Yokoyama: "Low-Temperature Selective Deposition of Silicon on Silicon Nitride by Time-Modulated Disilane Flow and Formation of Silicon Narrow Wires"Appl. Phys. Lett.. 79. 494-496 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Shin Yokoyama: "Self-Limiting Atomic-Layer Deposition of Si on SiO_2 by Alternate Supply of Si_2H_6 and SiCl_4"Appl. Phys. Lett.. 79. 617-619 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K.Kawamura: "Conduction Mechanism in Extremely Thin Poly-Si Wires -Width Dependence of Coulomb Blockade Effect-"Extend. Abst. of the Int. Conf. on Solid State Devices and Materials. 438-439 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K.Kawamura: "Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires"J. Appl. Phys. Lett.. 91. 5213-5220 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Shin Yokoyama et al.: "Atomic-Layer Deposition of Silicon Nitride"J. Korean Physical Soc.. 35. S71-S75 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Walter Hansch et al.: "Characterization of Silicon/Oxide/Nitirde Layers by X-ray Photoelectron Spectroscopy"Appl. Phys. Lett.. 75. 1535-1537 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Shin Yokoyama et al.: "Low-Termparature Selective Deposition of Silicon by Time-Modulation Exposure of Disilane and Formation of Silicon Nanowires"Extend. Abst. of the Int. Conf. on Solid State Devices and Materials. 202-203 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Shin Yokoyama et al.: "Low-Temperature Selective Deposition of Silicon on Silicon Nitride by Time-Modulated Disilane Flow and Formation of Silicon Narrow Wires"Appl. Phys. Lett.. 79. 494-496 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Shin Yokoyama et al.: "Self-Limiting Atomic-Layer Deposition of Si on SiO_2 by Alternate Supply of Si_2H_6 and SiCl_4"Appl. Phys. Lett.. 79. 617-619 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Kawamura et al.: "Conduction Mechanism in Extremely Thin Poly-Si Wires - Width Dependence of Coulomb Blockade Effect -"Extend. Abst. of the Int. Conf. on Solid State Devices and Materials. 438-439 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] K. Kawamura et al.: "Coulomb blockade effects and condition mechanism in extremely thin polycrystalline-silicon wires"J. Appl. Phys. Lett.. 91. 5213-5220 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Shin Yokoyama: "Low-Temperature Selective Deposition of Silicon on Silicon Nitride by Time-Modulated Disilane Flow and Formation of Silicon Narrow Wires":Appl. Phys."Appl. Phys. Lett.. 79. 494-496 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Shin Yokoyama: "Self-Limiting Atomic-Layer Deposition of Si on SiO_2 by Alternate Supply of Si_2H_6 and SiCl_4"Appl. Phys. Lett.. 79. 617-619 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] A.Nakajima: "Low-Temperature Foramation of Silicon Nitride Gate Dielectrics by Atomic-Layer Deposition"Appl. Phys. Lett.. 79. 665-667 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] A.Nakajima: "Chracterization of Atomic-Layer-Deposited Silicon Nitride/SiO_2 Stacked Gate Dielectrics for Highly Reliable p-Metal-Oxide-Semiconductor Field-Effect Transistors"J. Vac. Sci. & Tech.. B19. 1138-1143 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] K.Kawamura: "Conduction Mechanism in Extremely Thin Poly-Si Wires ---Width Dependence of Coulomb Blockade Effect---"Extend. Abst. of the Int. Conf. on Solid State Devices and Materials (SSDM2001). 438-439 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] 河村憲作: "多結晶Siナノ細線の電気伝導特性の評価"平成13年秋期第62回応用物理学会学術講演会予稿集. 12p-ZD-7 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Anri Nakajima: "Atomic-Layer-deposited Silicon-Nitride/SiO_2 Stacked Gate Dielectrics for Highly Reliable p-Metal-Oxide-Semiconductor Field-Effect Transistors"Applied Physics Letters. 77. 2855-2857 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Shin Yokoyama: "Low-Temperature Selective Deposition of Silicon by Time-Modulation Exposure of Disilane and Formation of Silicon Nanowires"Extend.Abst.of the Int.Conf.on Solid State Devices and Materials (SSDM'2000). 202-203 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Shingo Nakamura: "Comparative Studies of PFC Alternative Gas Plasmas for Contact Hole Etch"Proc.22th Symp.on Dry Process 2000. 199-203 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 河村憲作: "多結晶Si細線の電気的特性"平成12年秋期第61回応用物理学会学術講演会予稿集. 6pZD-15 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] 河村憲作: "多結晶Si細線の低温電気伝導特性"平成13年春期第48回応用物理学関係連合講演会予稿集. 28aZN-1 (2001)

    • Related Report
      2000 Annual Research Report
  • [Publications] S. Yokoyama,: "Atomic-Layer Deposition of Silicon Nitride"Journal of Korean Physical Society. 35. S71-S75 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] Y. Aoki: "Evaluation of Stress Induced Defects due to Recessed LOCOS Process"Journal of Korean Physical Society. 35. S76-S79 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] W. Hansch: "Characterization of Silicon/Oxide/Nitirde Layers by X-ray Photoelectron Spectroscopy"Applied Physics Letter. 75. 535-537 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] M. Koh: "Quantitative Evaluation of Dopant Loss in 5-10 keV As Ion Implantation for Low-Resistive, Ultrashallow Source/Drain Formation"Japanese Jouranal of Applied Physics. 38,No.4B. 2324-2328 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 大場健二: "SiCl_4とSi_2H_6の交互照射によるSiの原子層成長"平成11年秋期第60回応用物理学会学術講演会予稿集. 492-492 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 大場健二: "Si_2H_6の間欠照射によるSiの選択成長とSi量子細線形成"平成12年春期第47回応用物理学関係連合講演会予稿集. 30pZK-1 (1999)

    • Related Report
      1999 Annual Research Report

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Published: 1999-04-01   Modified: 2016-04-21  

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