| Project/Area Number |
11450130
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | DAIDO INSTITUTE OF TECHNOLOGY |
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Principal Investigator |
JIMBO Mutsuko Daido Institute of Technology, Department of Electronics and Electrical Engineering, Professor, 工学部, 教授 (00115677)
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| Co-Investigator(Kenkyū-buntansha) |
FUJIWARA Yuji Mie University, Department of Physics, Assistant Professor, 工学部, 助手 (90301225)
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| Project Period (FY) |
1999 – 2001
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| Project Status |
Completed (Fiscal Year 2001)
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| Budget Amount *help |
¥11,700,000 (Direct Cost: ¥11,700,000)
Fiscal Year 2001: ¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 2000: ¥2,800,000 (Direct Cost: ¥2,800,000)
Fiscal Year 1999: ¥7,800,000 (Direct Cost: ¥7,800,000)
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| Keywords | Magnetic thin film / Giant magnetoresistanse / Hot electron / Tunnel barrier |
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| Research Abstract |
A dependence of a current on magnetic field has been investigated for Si/Au/NiFe/Cu/Co/FeMn/Au/AlO and n-Si/Au/NiFe/Cu/Co/FeMn/Au films with 3 terminal structures. The 3 terminals are called a emitter, base and collector, respectively. The samples were prepared by RF/DC magnetron sputtering. A native oxide layer on Si wafer was removed by HF. In measurements of a current, two power sources were used for input and output biases. For the input bias, a constant current source or constant voltage source were used. The dependence of the base and the collector current on magnetic fields was measured for various output bias voltages at room temperature.
A ratio of a current change depended on a bias voltage applied to a backside electrode. An about 400% of current change was obtained at room temperature at a bias voltage where the collector current was nearly zero. When the constant current source was used as the input bias, the collector current was increased at an antipararell alignment of magnetization in magnetic layers. However, the collector current was decreased, when the constant voltage source. Taking into account the measurement geometry and the variation of the collector current, the dependence of the collector current on the magnetic field was thought to be effect of the variation of the collector current on the magnetic field was thought to be effect of the variation of the impedance in the CIP geometry.
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