| Project/Area Number |
11450131
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| Research Category |
Grant-in-Aid for Scientific Research (B).
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | MEIJO UNIVERSITY |
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Principal Investigator |
AMANO Hiroshi Meijo University, Faculty of Science and Technology, Associate Professor, 理工学部, 助教授 (60202694)
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| Co-Investigator(Kenkyū-buntansha) |
AKASAKI Isamu Meijo University, Faculty of Science and Technology, Professor, 理工学部, 教授 (20144115)
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| Project Period (FY) |
1999 – 2000
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| Project Status |
Completed (Fiscal Year 2000)
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| Budget Amount *help |
¥13,600,000 (Direct Cost: ¥13,600,000)
Fiscal Year 2000: ¥5,400,000 (Direct Cost: ¥5,400,000)
Fiscal Year 1999: ¥8,200,000 (Direct Cost: ¥8,200,000)
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| Keywords | Group III nitride semiconductors / Multi quantum well structure / UV laser diode / Bright blue light emitting diode / UV detector / Microwave FET / Two dimensional electron gas / 貫通転位 / 転位応力 / 鏡像転位 |
|---|
| Research Abstract |
Although high yield growth technology of group III nitrides on sapphire using low temperature deposited buffer layer which had been established by us in 1986 brought about the bright blue and green light emitting diodes and violet laser diodes, it still has the problem of high density threading dislocations.
In order to reduce threading dislocations in the group III nitride films, we intentionally applied horizontal biaxial stress during growth, thereby bend the threading dislocations. Intentional stress was applied by forming trench structure, by which growth plane was inclined from the c-axis direction. Self induced stress field around dislocations causes inductive force along growth plane, thereby almost all types of dislocations including pure-screw, pure-edge, and mixed type dislocations are bent. This mechanism can be applied not only in case of GaN but also applicable to AlGaN.Low dislocation density AlGaN has been achieved for the first time.
In this study, we also established the in-situ stress monitoring system, by which we can precisely determined the critical thickness for crack formation. We also found the impurity hardening effect in nitrides for the first time.
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