| Project/Area Number |
11450271
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Material processing/treatments
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| Research Institution | Nagoya University |
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Principal Investigator |
SUGIMURA Hiroyuki Nagoya Univ. Graduate School of Eng. Associate Professor, 工学研究科, 助教授 (10293656)
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| Co-Investigator(Kenkyū-buntansha) |
INOUE Yasushi Nagoya Univ. Research Center for Nuclear Materials Recycle, Associate Professor, 環境量子リサイクル研究センター, 助教授 (10252264)
TAKAI Osamu Nagoya Univ. Graduate School of Eng. Professor, 工学研究科, 教授 (40110712)
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| Project Period (FY) |
1999 – 2001
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| Project Status |
Completed (Fiscal Year 2001)
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| Budget Amount *help |
¥12,700,000 (Direct Cost: ¥12,700,000)
Fiscal Year 2001: ¥1,700,000 (Direct Cost: ¥1,700,000)
Fiscal Year 2000: ¥4,900,000 (Direct Cost: ¥4,900,000)
Fiscal Year 1999: ¥6,100,000 (Direct Cost: ¥6,100,000)
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| Keywords | diamond / diamond-like carbor / carbon nitride / field emission / 窒素炭素 / 窒化欄素 / 微細加工 / プラズマ合成 / 電流計測 / 走査型プローブ顕微鏡 |
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| Research Abstract |
Field emission characteristics of amorphous carbon nitride (a-C : N) thin films were studied in the applied field strength range of up to 20 V/μm with comparing the characteristics of amorphous carbon (a-C) thin films. Both a-C : N and a-C films were deposited on Si substrates by means of shielded arc ion plating (SAIP) using nitrogen or argon as an operating gas, respectively, and graphite as a solid carbon source. The a-C : N films showed better field emission characteristics, that is, lower threshold field strengths and higher maximum emission current densities, than the a C films. Nitrogen doping to a-C was found to be effective in order to improve the field emission characteristics. Among all of the fabricated a-C : N films, the film containing 23% nitrogen, prepared using a nitrogen arc plasma at a pressure of 1 Pa with applying a sample bias voltage of 100 V, showed the lowest thresholdrfield and the highest emission current density. Furthermore, thickness of this a-C : N was optimized to be ca. 40 nm in order to the best field emission characteristics , that is, a threshold field of 12 V/μm and a emission current density of 3.6 μA/cm^2 at a field of 20 V/μm.
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