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Surface Modification of Diamond by Organic Reactions for Preparation of Advanced Functional Devise

Research Project

Project/Area Number 11450293
Research Category

Grant-in-Aid for Scientific Research (B).

Allocation TypeSingle-year Grants
Section一般
Research Field 化学工学一般
Research InstitutionKYUSHU UNIVERSITY

Principal Investigator

MOROOKA Shigeharu  KYUSHU UNIVERSITY, Grad.School of Eng., Prof., 大学院・工学研究院, 教授 (60011079)

Co-Investigator(Kenkyū-buntansha) TSUTSUI Tetsuo  KYUSHU UNIVERSITY, Grad.School of Eng. & Sci., Prof., 大学院・総合理工学研究院, 教授 (40037982)
TSUBOTA Toshiki  KYUSHU UNIVERSITY, Grad.School of Eng., Res.Assoc., 大学院・工学研究院, 助手 (10304750)
KUSAKABE Katsuki  KYUSHU UNIVERSITY, Grad.School of Eng., Assoc.Prof., 大学院・工学研究院, 助教授 (30153274)
Project Period (FY) 1999 – 2000
Project Status Completed (Fiscal Year 2000)
Budget Amount *help
¥13,900,000 (Direct Cost: ¥13,900,000)
Fiscal Year 2000: ¥5,100,000 (Direct Cost: ¥5,100,000)
Fiscal Year 1999: ¥8,800,000 (Direct Cost: ¥8,800,000)
KeywordsDiamond / Chrolination / Surface modification / Hydrogenation / Functional groups / Gas phase / 有機合成 / 熱分解 / 薄膜 / 気相合成法
Research Abstract

Hydrogenated diamond powder was treated with an anhydrous chloroform solution of 2, 2'-azobisisobutyronitrile as the radical initiator and sulfuryl chloride as the chlorination reagent at 323 K under an Ar atmosphere. After the chlorination process, the solution was exhaustively evaporated and n-butylamine was added without exposure to air. The diamond was then butylaminated at 303 K for 1-24 h. The treated diamond powder was washed with tetrahydrofuran and water to remove by-products, and characterized by infrared spectroscopy and flash pyrolysis. It could be confirmed that the hydrogenated diamond surface was modified by the radical reactions in the liquid phase. The similar results were obtained by using ethylenediamine, propylamine, triethylamine or phenethylamine.
Chlorinated diamond was also treated with n-butyllithium, sodium azide, sodium methoxide or sodium ethoxide as the nucleophilic reagent. The formation of butyl, azide, methoxy and ethoxy groups on the diamond surface was not confirmed with FTIR and ESCA.The results might be due to the insufficient chlorination of diamond. Direct chlorination of diamond in the gas phase is carried out for the promoting covalent bonds between functional groups and carbon on the chlorinated diamond surface.

Report

(3 results)
  • 2000 Annual Research Report   Final Research Report Summary
  • 1999 Annual Research Report
  • Research Products

    (14 results)

All Other

All Publications (14 results)

  • [Publications] T.Tsubota et al.: "Surface Morphology and Electrical Properties of Boron-Doped Diamond Films Synthesized by MPCVD Using Trimethylboron on Diamond (100) Substrate"Diamond and Related Materials. 9巻. 1362-1368 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Tsubota et al.: "Heteroepitaxial Growth of Diamond on an Irridium (100) Substrate Using Microwave Plasma-assisted Chemical Vapor Deposition"Diamond and Related Materials. 9巻. 1380-1387 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T..Tsubota et al.: "Surface Modification of Hydrogen Diamond Powder by Radical Reactions in Chloroform Solutions"Diamond and Related Materials. 9巻. 219-223 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T..Tsubota et al.: "Effect of Total Reaction Pressure on Electrical Properties of Boron Doped Homoepitaxial (100) Diamond Films by Microwave Plasma-Assisted"Diamond and Related Materials. 8巻. 1079-1082 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Tsubota et al.: "Surface Morphology and Electrical Properties of Boron-Doped Diamond Films Synthesized by MPCVD Using Trimethylboron on Diamond (100) Substrates"Diamond and Related Materials. Vol.9. 1362-1368 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Tsubota et al.: "Heteroepitaxial Growth of Diamond an Irridium (100) Substrate Using Microwave Plasma-Assisted Chemical Vapor Deposition"Diamond and Related Materials. Vol.9. 1380-1387 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Tsubota et al.: "Surface Modification of Hydrogen Diamond Powder by Radical Reactions in Chloroform Solutions"Diamond and Related Materials. Vol.9. 219-223 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Tsubota et al.: "Effect of Total Reaction Pressure on Electrical Properties of Boron Doped Homoepitaxial (100) Diamond Films by Microware Plasma-Assisted Chemical Vapor Deposition Using Trimethylboron"Diamond and Related Materials. Vol.8. 1079-1082 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Tsubota et al.: "Surface Morphology and Electrical Properties of Boron-Doped Diamond Films Synthesized by MPCVD Using Trimethylboron on Diamond (100) Substrate"Diamond and Related Materials. 9巻. 1362-1368 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Tsubota et al.: "Heteroepitaxial Growth of Diamond on an Irridium (100) Substrate Using Microwave Plasma-assisted Chemical Vapor"Diamond and Related Materials. 9巻. 1380-1387 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.,Tsubota et al.: "Surface Modification of Hydrogen Diamond Powder by Radical Reactions in Chloroform Solutions"Diamond and Related Materials. 9巻. 219-223 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] S.Moroolca et al.: "Electorical ProperTies of Homoepitaxiol Bron-Doped Diomond thin Films Grown by Chemical Vapor Deposition Using Trimethy Lboron as Dopant"Diamond and Related Materials. 8. 42-47 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] T.Tsubota et al.: "Effect of ToTal Reaction Pressure on Electrical ProperTies Born Doped Homeoep:taxial(1.00)Diamond Films by Hicroware Plasma/Assisted Chemical Vapr"Diamond and Related Materials. 8. 1079-1082 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] T.Tsubota et al.: "Surface modification of hydrogenated diamond powder by radical reaetions in chloro from solutions"Diamond and Related Materials. (印刷中).

    • Related Report
      1999 Annual Research Report

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Published: 1999-04-01   Modified: 2016-04-21  

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