| Project/Area Number |
11450297
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
反応・分離工学
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| Research Institution | The University of Tokyo |
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Principal Investigator |
KOSHI Mitsuo Graduate School of Engineering, The University of Tokyo, Professor, 大学院・工学系研究科, 教授 (20133085)
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| Co-Investigator(Kenkyū-buntansha) |
TONOKURA Kenich Graduate School of Engineering, The University of Tokyo, Research Associate, 大学院・工学系研究科, 助手 (00260034)
MIYOSHI Akira Graduate School of Engineering, The University of Tokyo, Associate Professor, 大学院・工学系研究科, 助教授 (60229903)
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| Project Period (FY) |
1999 – 2001
|
| Project Status |
Completed (Fiscal Year 2001)
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| Budget Amount *help |
¥12,600,000 (Direct Cost: ¥12,600,000)
Fiscal Year 2001: ¥3,800,000 (Direct Cost: ¥3,800,000)
Fiscal Year 2000: ¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 1999: ¥5,100,000 (Direct Cost: ¥5,100,000)
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| Keywords | silane / hot filament / reaction mechanism / CVD / surface reaction / amorphous / crystalline silicon / アルモファス / ドップラー分光 / シリコン / シレン |
|---|
| Research Abstract |
Resonance enhanced multiphoton ionization spectroscopy coupled with molecular beam technique has been used to measure H and Si atoms produced by the hot-wire induced decomposition of silane. The catalytic decomposition of silane on the hot filament exhibited different temperature distributions between H and Si atoms. A chemical kinetic model starting with Si+SiH_4 and H+SiH_4 reactions was proposed to explain chemical kinetic phenomena occurring in the silicon hot-wire chemical vapor deposition. The modeling results suggest that temperature sensitivity of film growth properties is primarily due to the gas composition near the surface.
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