On the enlargement of active area of superconducting junction radiation detector with segmented absorbers
| Project/Area Number |
11480123
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| Research Category |
Grant-in-Aid for Scientific Research (B).
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Nuclear engineering
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| Research Institution | KYOTO UNIVERSITY |
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Principal Investigator |
KANNO Ikuo Kyoto University, Engineering, Associate Professor, 工学研究科, 助教授 (50234167)
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| Co-Investigator(Kenkyū-buntansha) |
KANAZAWA Satoshi Kyoto University, Engineering, Instructor, 工学研究科, 助手 (60089125)
SHIN Kazuo Kyoto University, Engineering, Associate Professor, 工学研究科, 助教授 (70109023)
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| Project Period (FY) |
1999 – 2000
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| Project Status |
Completed (Fiscal Year 2000)
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| Budget Amount *help |
¥15,900,000 (Direct Cost: ¥15,900,000)
Fiscal Year 2000: ¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 1999: ¥12,200,000 (Direct Cost: ¥12,200,000)
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| Keywords | Superconductor / radiation detector / very low temperature / energy resolution / active area / segmented absorber / electron temperature / tunnel junction |
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| Research Abstract |
Superconducting radiation detectors have excellent energy resolution, however, they also have shortcomings : their small active areas. In applying radiation detectors for practice, a detector with a larger active area is plausible. To overcome this disadvantage, we started studying to fabricate normal metal-insulator-superconductor junction detector (NIS detector) with segmented absorbers. With the small heat capacitance of each segmented absorber, the energy resolution of the NIS detector is kept excellent. The active area of the NIS detector is as large as the summed area of segmented absorbers. Each segmented absorber is connected one another by superconducting leads, to have the same electric potential and to isolate thermally each other. A patent is submitted on the NIS detector with segmented absorbers.
First, we developed magnetron sputtering device for Ag as normal metal, Al as insulator after oxidation, and Nb as superconductor. Next, the sputtering condition for each material and the oxidation condition were optimized. Finally, we fabricated NIS detectors with exploiting an X-Y stage and a shadow mask to define patterns of membranes of detectors. On these NIS detectors, we measured current-voltage (I-V) characteristics at the temperature from 8K to 0.3K.The detectors showed I-V curves which characterize NIS junctions.
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Report
(3 results)
Research Products
(6 results)
