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On the enlargement of active area of superconducting junction radiation detector with segmented absorbers

Research Project

Project/Area Number 11480123
Research Category

Grant-in-Aid for Scientific Research (B).

Allocation TypeSingle-year Grants
Section一般
Research Field Nuclear engineering
Research InstitutionKYOTO UNIVERSITY

Principal Investigator

KANNO Ikuo  Kyoto University, Engineering, Associate Professor, 工学研究科, 助教授 (50234167)

Co-Investigator(Kenkyū-buntansha) KANAZAWA Satoshi  Kyoto University, Engineering, Instructor, 工学研究科, 助手 (60089125)
SHIN Kazuo  Kyoto University, Engineering, Associate Professor, 工学研究科, 助教授 (70109023)
Project Period (FY) 1999 – 2000
Project Status Completed (Fiscal Year 2000)
Budget Amount *help
¥15,900,000 (Direct Cost: ¥15,900,000)
Fiscal Year 2000: ¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 1999: ¥12,200,000 (Direct Cost: ¥12,200,000)
KeywordsSuperconductor / radiation detector / very low temperature / energy resolution / active area / segmented absorber / electron temperature / tunnel junction
Research Abstract

Superconducting radiation detectors have excellent energy resolution, however, they also have shortcomings : their small active areas. In applying radiation detectors for practice, a detector with a larger active area is plausible. To overcome this disadvantage, we started studying to fabricate normal metal-insulator-superconductor junction detector (NIS detector) with segmented absorbers. With the small heat capacitance of each segmented absorber, the energy resolution of the NIS detector is kept excellent. The active area of the NIS detector is as large as the summed area of segmented absorbers. Each segmented absorber is connected one another by superconducting leads, to have the same electric potential and to isolate thermally each other. A patent is submitted on the NIS detector with segmented absorbers.
First, we developed magnetron sputtering device for Ag as normal metal, Al as insulator after oxidation, and Nb as superconductor. Next, the sputtering condition for each material and the oxidation condition were optimized. Finally, we fabricated NIS detectors with exploiting an X-Y stage and a shadow mask to define patterns of membranes of detectors. On these NIS detectors, we measured current-voltage (I-V) characteristics at the temperature from 8K to 0.3K.The detectors showed I-V curves which characterize NIS junctions.

Report

(3 results)
  • 2000 Annual Research Report   Final Research Report Summary
  • 1999 Annual Research Report
  • Research Products

    (6 results)

All Other

All Publications (6 results)

  • [Publications] 神野郁夫: "超伝導体、単体半導体、化合物半導体を用いた低温放射線検出器の研究"放射線. 26. 87-94 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] F.Yoshihara: "Study on the Enlargement of Sensitive Area of NIS-type Tunnel Junction Detector"KEK 2000-14. 117-122 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] I.Kanno: "Study on low temperature radiation detectors made of superconductor, mono-semiconductor and compound semi conductor"Ionizing Radiation. 26. 87-94 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] F.Yoshihara: "Study on the enlargement of sensitive area of NIS-type tunnel junction detector"KEK. 2000-14. 117-122 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] 神野郁夫: "超伝導体、単体半導体、化合物半導体を用いた低温放射線検出器の研究"放射線. 26. 87-94 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] F.Yoshihara: "Study on the Enlargement of Sensitive Area of NIS-type Tunnel Junction Detector"KEK 2000-14. 117-122 (2000)

    • Related Report
      2000 Annual Research Report

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Published: 1999-04-01   Modified: 2016-04-21  

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