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FABRICATION OF MULTI-WAVELENGTHLIGHT SOURCES

Research Project

Project/Area Number 11555011
Research Category

Grant-in-Aid for Scientific Research (B).

Allocation TypeSingle-year Grants
Section展開研究
Research Field Applied optics/Quantum optical engineering
Research InstitutionTokyo Institute of Technology

Principal Investigator

KOYAMA Fumio  Tokyo Institute of Technology, PRECISION & INTELLIGENCE LABORATORY, ASSOCIATE PROFESSOR, 精密工学研究所, 教授 (30178397)

Co-Investigator(Kenkyū-buntansha) KASUKAWA Akihiko  FURUKAWA ELECTRIC, LTD., YOKOHAMA RESEARCH LABORATORY, SENIOR RESEARCHER, 研究開発本部, グループリーダ
Project Period (FY) 1999 – 2000
Project Status Completed (Fiscal Year 2000)
Budget Amount *help
¥6,900,000 (Direct Cost: ¥6,900,000)
Fiscal Year 2000: ¥3,900,000 (Direct Cost: ¥3,900,000)
Fiscal Year 1999: ¥3,000,000 (Direct Cost: ¥3,000,000)
KeywordsOPTICAL COMMUNICATIONS / SEMICONDUCTOR LASERS / WAVELENGTH DIVISION MULTIPLEXING / MULTI-WAVELENGTH LIGHT SOURCE / 光ファイバ通信 / 波長多重方式
Research Abstract

A multi-wavelength light source is one of key devices for future large scale wavelength division multiplexing (WDM) networks. Various kinds of multi-wavelength light sources have been proposed and demonstrated. A spectrum slicing technique using broadband light sources, such as light emitting diodes, super-luminescent diodes (SLDs), super-continuum generators and mode-locked semiconductor lasers, is attractive especially for generating equally-spaced multi-wavelength light. The configuration of spectrum sliced light sources using incoherent light is simple, however, the drawback is a limited low power and a large excess intensity noise caused by a spontaneous emission beat noise.
In this work, modeling and experiments on high power tapered SLDs were presented. High power tapered SLDs have been developed and broad-band emission can be realized with non-uniform quantum well structures. Also, a novel technique of reducing the excess intensity noise has been developed.
A tapered SLDs with the non-uniform QW structure was demonstrated for large scale spectrum sliced multi-wavelength light sources. High power of over 1.5 W and broad-band emission of over 50 nm were demonstrated either at 1.5μm and 1.2μm band. Also, we propose a novel method to avoid the beat noise of spectrum-sliced incoherent light by using saturated SOAs. We found that the saturation characteristic in semiconductor optical amplifiers is helpful for reducing the excess intensity noise of spectrum-sliced light. We investigated the noise suppression using a gain-saturated SOA, showing that the intensity noise of the input signal can be significantly reduced over a bandwidth of few GHz. We demonstrated a SOA intensity modulator with a function of both noise reduction and signal modulation. The proposed device will be useful for spectrum-sliced multi-wavelength light sources used in WDM local area networks.

Report

(3 results)
  • 2000 Annual Research Report   Final Research Report Summary
  • 1999 Annual Research Report
  • Research Products

    (15 results)

All Other

All Publications (15 results)

  • [Publications] T.Yamatoya,F.Koyama,and K.Iga,: "Noise suppression and intensity modulation in gain-saturated semiconductor optical amplifiers and its application to spectrum-sliced light sources"Jpn.J.Appl.Phys.. 39・8B. L861-L863 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] N. Nishiyama,M.Arai,S.Shinada,T.Miyamoto,F.Koyama,and K.Iga: "1.15μm lasing operation of highly strained GaInAs/GaAs on GaAs (311) B substrate with high characteristic temperature (T0=210K)"Jpn.J.Appl.Phys.,. 39・10B. L1046-L1047 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] D.Schlenker,T.Miyamoto,Z.Chen,T.Kondo,E.Gouardes,F.Koyama,: "Critical layer thickness of 1.2-μm highly strained GaInAs/GaAs quantum wells"J.Crystal Growth.. 221. 503-508 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] F.Koyama,T.Yamatoya,and K.Iga: "Highly gain-saturated GaInAsP/InP SOA modulator for incoherent spectrum-sliced light source"IPRM'00. WP2,26. (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Yamatoya, F.Koyama, and K.Iga: Jpn.J.Appl.Phys. vol.39, no.8B. L861-L863 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] N.Nishiyama, M.Arai, S.Shinada, T.Miyamoto, F.Koyama, and K.Iga: Jpn.J.Appl.Phys.. vol.39, no.10B. L1046-L1047 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] D.Schlenker, T.Miyamoto, Z.Chen, M.Kawaguchi, T.Kondo, E.Gouardes, F.Koyama, and K.Iga: J.Crystal Growth. vol.221. 503-508 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] F.Koyama, T.Yamatoya, and K.Iga: IPRM'00, Williamsburg, VA. paper WP2.26. (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2000 Final Research Report Summary
  • [Publications] T.Yamatoya,F.Koyama,and K.Iga: "Noise suppression and intensity modulation in gain-saturated semiconductor optical amplifiers and its application to spectrum-sliced light sources"Jpn.J.Appl.Phys.. 39・8B. L861-L863 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] N.Nishiyama,M.Arai,S.Shinada,T.Miyamoto,F.Koyama,and K.Iga: "1.15 μm lasing operation of highly strained GaInAs/GaAs on GaAs (311) B substrate with high characteristic temperature (T0=210K)"Jpn.J.Appl.Phys.. 39・10B. L1046-L1047 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] D.Schlenker,T.Miyamoto,Z.Chen,T.Kondo,E.Gouardes,F.Koyama,: "Critical layer thickness of 1.2-μm highly strained GaInAs/GaAs quantum wells"J.Crystal Growth. 221. 503-508 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Yamatoya,F.Koyama,and K.Iga: "Noise suppression and intensity modulation using gain-saturated semiconductor optical amplifier"OAA 2000. OMP12. 72-74 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Yamatoya,S.Mori,F.Koyama: "High Power GalnAsP/InP Strained Quantum Well Superluminescent Diode with Tapered Active Region"Jpn.J.Appl.Phys.. Vol38・no9A. 5121-5122 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] F.Koyama,D.Schlenker,T.Miyamoto: "1.2μm highly strained GalnAs/GaAs quantum well lasers for singlemode fibre datalink"Electron.Lett.. Vol35・no13. 1079-1080 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] F.Koyama,T.Yamatoya and K.Iga: "Highly Gain-Saturated GalnAsP/InP SOA Modulator For Incoherent Spectrum-Sliced Light Source"Technical Digest of IPRM 2000. (発表予定). (2000)

    • Related Report
      1999 Annual Research Report

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Published: 1999-04-01   Modified: 2016-04-21  

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