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Ultra High-Speed Operation of Ultra-Fine GaInAs/InP HBT by Suppressing Recombination Current at Mesa Sidewall

Research Project

Project/Area Number 11555092
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section展開研究
Research Field 電子デバイス・機器工学
Research InstitutionTokyo Institute of Technology

Principal Investigator

MIYAMOTO Yasuyuki  Graduate School of Science and Engineering, Tokyo Institute of Technology, Associate Professor, 大学院・理工学研究科, 助教授 (40209953)

Project Period (FY) 1999 – 2001
Project Status Completed (Fiscal Year 2001)
Budget Amount *help
¥12,800,000 (Direct Cost: ¥12,800,000)
Fiscal Year 2001: ¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2000: ¥4,800,000 (Direct Cost: ¥4,800,000)
Fiscal Year 1999: ¥4,400,000 (Direct Cost: ¥4,400,000)
KeywordsGaInAs / InP HBT / Heterojunction Bipolar Transistor / Miniaturization of Emitter / Electron Beam Exposure / Suppression of Undercut Etching / Formation of Mesa Sidewall / GalnAs
Research Abstract

Measurement of Mesa Sidewall Recombination Current of HBT with Fine Emitter Fabricated by Combination of Dry/Wet Etching
It has been enabled to fabricate 100 nm wide fine emitter by a combination of electron beam exposure, CH_4/H_2 reactive ion etching and wet etching. Size dependence of current gain of this fine HBT has been compared with that of formerly fabricated HBT only by wet etching. In HBT with 010 emitter sidewall realized by a combination of HCl and CH_3COOH etching solution, dry/wet combination etching process has enabled to obtain current performance even or superior to that obtained by only wet etching and current gain over 50, which is sufficiently large for circuit application, has been realized. Therefore, we could show excellent current performance could be realized even in HBT with fine emitter.
Fabrication of High-Speed HBT with Fine Emitter and Metal Wire Collector
Fine emitter structure combined with reduction method of base-collector capacitance can reduce base-collector capacitance, and therefore, can realize fast operation of HBT. So, we have introduced a base-collector capacitance reduction method, where buried metal wire has been used as collector, to HBT with sub-micron wide emitter. As results, in a device with an emitter having a width of 0.3 um and a length of 1.5 um, a base-collector capacitance less than 0.1 fF, which is the smallest value among ever reported, has been confirmed and a maximum oscillation frequency f_<max> of 200 GHz has been also achieved. Since at present the device performance is largely restricted by non-intrinsic part of the device, such as contact resistance, a more high-speed operation of HBT can be expected when we introduce, for example, a wiring technique reported by another research groups.

Report

(4 results)
  • 2001 Annual Research Report   Final Research Report Summary
  • 2000 Annual Research Report
  • 1999 Annual Research Report
  • Research Products

    (42 results)

All Other

All Publications (42 results)

  • [Publications] Y.Miyamoto: "Barrier thickness dependence of peak current density in GaInAs/AlAs/InPF resonat tunneling diodes by MOVPE"Solid State Electronics. 43. 1395 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Arai: "Toward nano-metal buried structure in InP-20 nm wire and InP buried growth of tungsten"Physica E. 7. 869 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Arai: "First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistot and Reduction of Base-Collector Canacitance"Jpn. J. Appl. Phys.. 39. L503 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Arai: "GaAs buried growth over tungsten stripe using TEG and TMG"J. Crystal Growth. 221. 212 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y.Miyamoto: "Fabrication and transport properties of 50-nm-wide Au/Cr/GaInAs electrode for electron wave interference device"Applied Surface Science. 159-160. 179 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Arai: "Reduction of Base-Collector Capacitance in Submicron InP/GaInAs Heterojunction Bipolar Transistor with Buried Tungsten Wires"Jpn. J. Appl. Phys.. 40. L735 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y.Miyamoto: "InP DHBT with 0.5μm Wide Emitter along <010> Direction toward BM-HBT with Narrow Emitter"Trans. IECE of Japan. E84-C. 1394 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Morita: "Fabrication ofInP/GaInAs Double Heterojunction Bipolar Transistors with 0.1-μm-Wide Emitter"Jpn. J. Appl. Phys.. 41. L121 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] 宮本恭幸: "InP系ヘテロ接合バイポーラトランジスタの高速化技術"応用物理. 71. 285 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Miyamoto, H.Tobita, K.Oshima, and K.Furuya: "Barrier thickness dependence of peak current density in GaInAs/AlAs/InP resonant tunneling diodes by MOVPE"Solid State Electronics. Vol.43. 1395-1398 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Arai, H. Tobita, Y. Harada, M. Suhara, Y. Miyamoto, and K. Furuya: "Toward nano-metal buried structure in InP - 20 nm wire and InP buried growth of tungsten"Physica E. vol. 7. 851-854 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Arai, Y. Harada, S. Yamagami, Y. Miyamoto and K. Furuya: "First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance"Jpn. J. Appl. Phys.. vol.39, no.6A. L503-L505 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Arai, H. Tobita, Y. Miyamoto and K. Furuya: "GaAs buried growth over tungsten stripe using TEG and TMG"J. Crystal Growth. vol. 221. 212-219 (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Arai, S. Yamagami, Y. Miyamoto and K. Furuya: "Reduction of Base-Collector Capacitance in Submicron InP/GaInAs Heterojunction Bipolar Transistors with Buried Tungsten Wires"Jpn. J. Appl. Phys.. Vol.40, no.7B. L735-L737 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Arai, S. Yamagami, Y. Okuda, Y. Harada, Y. Miyamoto and K. Furaya: "InP DHBT with 0.5 μm wide emitter along <010> direction toward BM-HBT with narrow emitter"Trans. IEICE of Japan. Vol.E84C, No. 10. 1394-1398 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Morita, T. Arai, H. Nagatsuka, Y. Miyamoto, and K. Furuya: "Fabrication of InP/GaInAs Double Heterojunction Bipolar Transistors with 0.1-um-Wide Emitter"Jpn. J. Appl. Phys.. vol.41, no.2A. L121-L123 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] Y. Miyamoto and K. Furuya: "Techniques for high-speed InP-related heterojunction bipolar transistors"OYOBUTURI. vol.71, no.3. 285-294 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Arai, H. Tobita, Y. Harada, M. Suhara, Y. Miyamoto and K. Furuya: "Proposal of Buried Metal Heterojunction Bipolar Transistor and Fabrication of HBT with Buried Tungsten"Eleventh International Conference on Indium Phosphide and Related Materials (IPRM '99), TuA 1-4, Davos, Switzerland May. (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Arai, H. Tobita, Y. Harada, M. Suhara, Y. Miyamoto and K. Furuya: "Toward nano-metal buried in InP structure 20 nm wide tungsten wires and InP buried growth of Tungsten"The 9th International Conference on Modulated Semiconductor Structures, D-21 Fukuoka, Japan, July. (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Arai, Y. Harada, S. Yamagami, Y. Miyamoto and K. Furuya: "C_<BC> reduction in GaInAs/InP buried metal heterojunction bipolar transistor"Twelfth International Conference on Indium Phosphide and Related Materials (IPRM '00), TuB 1.6, Williamsburg, VA, USA, May. (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Arai, H. Tobita, Y. Miyamoto and K. Furuya: "GaAs buried growth over tungsten stripes using TEG and TMG"11th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XI), Tu-A3, Sapporo, Japan, June. (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Arai, S. Yamagami, Y. Miyamoto and K. Furuya: "Submicron Buried Metal Heterojunction Bipolar Transistors"IPRM '01, FA3-7, Nara, JAPAN, May. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Arai, T. Morita, H. Nagatsuka, Y. Miyamoto and K. Furuya: "Fabrication of InP DHBTs with 0.1 μm Wide Emitter"59th Annual Device Research Conference, III-24, Notre Dame, IN, USA, June. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T. Arai, Y. Harada, H. Tobita, Y. Miyamoto, and K. Furuya: Technical Report of IEICE. ED99-196. CPM99-107 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2001 Final Research Report Summary
  • [Publications] T.Arai: "Reduction of Base-Collector Capacitance in Submicron InP/GaInAs Heterojunction Bipolar Transistors with Buried Tungsten Wires"Jpn. J. Appl. Phys.. 40. L735-L737 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Arai: "InP DHBT with 0.5μm Wide Emitter along(3C)16<010(3E)16 Direction toward BM-HBT with Narrow Emitter"Trans. IECE of Japan. E84-C. 1394-1398 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Morita: "Fabrication of InP/GaInAs Double Heterojunction Bipolar Transistors with 0.1-μm-Wide Emitter"Jpn. J. Appl. Phys.. 41. L121-L123 (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] 宮本恭幸: "InP系ヘテロ接合バイポーラトランジスタの高速化技術"応用物理. 71. 285-294 (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Arai: "Submicron Buried Metal Heterojunction Bipolar Transistors"13th International Conference on Indium Phosphide and Relate Materials (IPRM'01). FA3-7. (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Arai: "Fabrication of InP DHBTs with 0.1μm Wide Emitter"59th Annual Device Research Conference. III-24. (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Arai: "Toward nano-metal buried structure in InP-20 nm wire and InP buried growth of tungsten"Physica E. 7. 896-901 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Arai: "First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance"Jpn.J.Appl.Phys.. 39. L503-L505 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Arai: "InP DHBT with 0.5mm Wide Emitter along <010> Direction toward BM-HBT with Narrow Emitter"Proceeding of Topical Workshop on Heterostructure Microelectronics (TWHM'00). D-21. 66-67 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Arai,: "GaAs buried growth over tungsten stripe using TEG and TMG"J.Crystal Growth. 221. 212-219 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] T.Arai,: "C_<BC> reduction in GaInAs/InP buried metal heterojunction bipolar transistor"Proceeding of Twelfth International Conference on Indium Phosphide and Related Materials (IPRM'00). 254-257 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.Miyamoto,: "Fabrication and transport properties of 50-nm-wide Au/Cr/GaInAs electrode for electron wave interference device"Applied Surface Science. 159-160. 179-185 (2000)

    • Related Report
      2000 Annual Research Report
  • [Publications] Y.Miyamoto: ""Barrier thickness dependence of peak current density in GaInAs/AlAs/InP resonant tunneling diodes by MOVPE""Solid State Electronics,. 43. 1395-1398 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] T.Arai: "Proposal of Buried Metal Heterojunction Bipolar Transistor and Fabrication of HBT with Buried Tungsten"11^<th> International Conference on Indium Phosphide and Related Materials. TuA1-4. (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] T.Arai: "Toward nano-metal buried In InP structure-20 nm wide tungsten wires and InP buried growth of Tungsten"9^<th> International Conference on Modulated Semiconductor Structures. D-21. (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] Y.Miyamoto: "Anomalous Current in 50 nm width Au/Cr/GaInAs Electrode for electron wave interference device"3^<th> International Symposium on Control of Semiconductor Interface. A5-6. (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 新井俊希: "埋込みタングステンメッシュをコレクタ電極として使用したHBTの作製"電子情報通信学会電子デバイス研究会. ED99-156. (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] T.Arai: "C_<BC> reduction in GaInAs/InP buried metal heterojunction bipolar transistor"12^<th> International Conference on Indium Phosphide and Related Materials. (発表予定). (2000)

    • Related Report
      1999 Annual Research Report

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Published: 1999-04-01   Modified: 2016-04-21  

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